NSS12501UW3T2G

NSS12501UW3T2G 12 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 12 VOLTS, 7.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 31 mW COLLECTOR 3 Features 1 BASE •This is a Pb-Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector‐Emitter Voltage VCEO 12 Vdc Collector‐Base Voltage VCBO 12 Vdc Emitter‐Base Voltage VEBO 6.0 Vdc IC 5.0 Adc Collector Current - Peak ICM 7.0 A Electrostatic Discharge ESD Collector Current - Continuous HBM Class 3B MM Class C 2 EMITTER 3 WDFN3 CASE 506AU 2 1 MARKING DIAGRAM VF MG G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 875 7.0 mW mW/°C RqJA (Note 1) 143 °C/W PD (Note 2) 1.5 11.8 W mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 85 °C/W Thermal Resistance, Junction-to-Lead #1 RqJL (Note 2) 23 °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25°C Derate above 25°C (Note: Microdot may be in either location) °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 2 1 VF = Specific Device Code M = Date Code G = Pb-Free Package 1 ORDERING INFORMATION Device Package Shipping† NSS12501UW3T2G WDFN3 (Pb-Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS12501UW3/D NSS12501UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max 12 - - 12 - - 6.0 - - - - 0.1 - - 0.1 200 200 200 200 200 345 330 315 - - 0.007 0.031 0.045 0.070 0.100 0.100 0.008 0.035 0.060 0.100 0.120 0.120 - 0.760 0.900 - 0.730 0.900 150 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 12 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Collector-Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.020 A) (IC = 3.0 A, IB = 0.030 A) (IC = 4.0 A, IB = 0.400 A) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 3) (IC = 2.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - 650 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - 120 pF Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) td - - 90 ns Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tr - - 100 ns Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) ts - - 320 ns Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tf - - 100 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS12501UW3T2G 0.2 VCE(sat) = 150°C IC/IB = 10 25°C 0.10 -55 °C 0.05 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.15 IC/IB = 100 150°C 0.15 0.1 0.05 25°C 0 0 0.01 0.001 0.1 1.0 10 0.001 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.2 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150°C (5 V) 575 hFE, DC CURRENT GAIN 0.01 IC, COLLECTOR CURRENT (A) 625 150°C (2 V) 525 475 425 25°C (5 V) 375 25°C (2 V) 325 275 225 -55 °C (5 V) 175 -55 °C (2 V) IC/IB = 10 1.1 1.0 0.9 -55 °C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 125 0.01 0.1 1 10 0.001 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 0.9 -55 °C 0.7 25°C 0.6 0.5 150°C 0.3 0.2 0.001 10 1.0 Figure 3. DC Current Gain vs. Collector Current VCE = 2.0 V 0.4 0.1 IC, COLLECTOR CURRENT (A) 1.0 0.8 0.01 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR-EMITTER VOLTAGE (V) 0.001 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) VCE(sat) = -55°C 0.01 0.1 1.0 10 1.0 10 mA 100 mA 300 mA IC = 500 mA 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12501UW3T2G 140 Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 625 575 525 475 425 375 325 Cobo (pF) 130 120 110 100 90 80 70 275 0 1.0 2.0 4.0 3.0 5.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 mS 1 10 mS IC (A) Cibo, INPUT CAPACITANCE (pF) 675 100 mS 1.0 S 0.1 Thermal Limit Single Pulse Test at Tamb = 25°C 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 4 100 9.0 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN3 2x2, 1.3P CASE 506AU ISSUE A DATE 18 AUG 2016 1 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ DIM A A1 A3 b D D2 E E2 e K L E MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 INCHES NOM 0.030 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.010 MAX 0.031 0.002 0.014 0.063 0.043 0.018 TOP VIEW GENERIC MARKING DIAGRAM* A 0.10 C XX M G 8X 0.08 C SEATING PLANE (A3) SIDE VIEW A1 1 C XX = Specific Device Code M = Date Code D2 e 2 1 2X *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. e/2 L K SOLDERING FOOTPRINT* 1.300 2X E2 0.400 0.600 0.250 3 3X b 0.10 C A B 0.05 C NOTE 3 1.100 0.300 BOTTOM VIEW 0.400 0.275 1.600 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON21416D WDFN3 2X2, 1.3P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative