NSS30070MR6T1G

NSS30070MR6T1G 30 V, 0.7 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 30 VOLTS 0.7 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 320 mW COLLECTOR PINS 2, 5 BASE PIN 6 • This Device is Pb−Free and is RoHS Compliant EMITTER PIN 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 30 V Collector−Base Voltage VCBO 40 V Emitter−Base Voltage VEBO 5.0 V Collector Current IC 700 mA Base Current IB 350 mA Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction-to-Ambient (Note 1) PD PD RqJA 342 178 366 mW mW °C/W Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction-to-Ambient (Note 2) PD PD RqJA 665 346 188 mW mW °C/W TJ, Tstg −55 to +150 °C Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State. 4 6 5 1 2 3 SC−74 CASE 318F STYLE 2 DEVICE MARKING VS2 MG G VS2 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSS30070MR6T1G Package Shipping† SC−74 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Publication Order Number: NSS30070MR6/D NSS30070MR6T1G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Base Breakdown Voltage (IC = 100 mA) V(BR)CBO 40 − − V Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 30 − − V Emitter−Base Breakdown Voltage (IE = 100 mA) V(BR)EBO 5.0 − − V (VCB = 25 V, IE = 0 A) (VCB = 25 V, IE = 0 A, TA = 125°C) ICBO − − − − 1.0 10 mA (VEB = 5.0 V, IC = 0 A) IEBO − − 10 mA (VCE = 3.0 V, IC = 100 mA) hFE 150 − − V Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.25 V Collector −Emitter Saturation Voltage (IC = 700 mA, IB = 70 mA) VCE(sat) − − 0.4 V Base−Emitter Saturation Voltage (IC = 700 mA, IB = 70 mA) VBE(sat) − − 1.1 V (IC = 700 mA, VCE = 1.0 V) VBE(on) − − 1.0 V Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain 0.5 0.4 0.3 0.7 A 0.2 0.5 A 0.1 A 0.1 10 mA IC = 1.0 mA 0 0.000001 0.00001 0.0001 0.001 0.01 0.2 VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER VOLTAGE (V) Base−Emitter Turn−On Voltage 0.5 A 0.15 0.1 0.1 A 10 mA 0.05 IC = 1.0 mA 0 0.1 0.000001 0.00001 0.0001 0.001 0.01 IB, BASE CURRENT (A) IB, BASE CURRENT (A) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 0.1 1.0 1000 VBE(sat) VCE(sat), VBE(sat) SATURATION VOLTAGES h FE , DC CURRENT GAIN VCE = 3.0 V 150°C 25°C -40°C 0.1 VCE(sat) 100 IC/IB = 10 0.01 0.01 0.1 1.0 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “SAT” Voltages http://onsemi.com 2 1.0 NSS30070MR6T1G 1.0 0.16 T = 85°C 25°C IC/IB = 10 VCE(sat) , VOLTAGE (V) VCE(sat), VBE(sat) SATURATION VOLTAGES VBE(sat) 0.1 VCE(sat) 0.12 0°C 0.08 0.04 IC/IB = 100 0 0.01 0.01 0.001 0.1 1.0 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “SAT” Voltages Figure 6. Collector−Emitter Saturation Voltage 0.6 1.0 T = 85°C IC/IB = 100 0.5 -40°C 25°C VBE(on) , VOLTAGE (V) VCE(sat) , VOLTAGE (V) 0.1 0.01 0°C 0.4 0.3 0.2 0.75 25°C 0.5 150°C 0.25 0.1 VCE = 1.0 V 0 0 TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 1.0 0.0001 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Collector−Emitter Saturation Voltage Figure 8. VBE(on) Voltage 1.0 1.0 0.5 0.2 0.1 0.1 P(pk) 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) - TA = P(pk) ZqJA(t) t1 0.02 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.0001 0.001 0.1 0.01 1.0 TIME (sec) Figure 9. Thermal Response Curve http://onsemi.com 3 10 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative