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NSV40302PDR2G

NSV40302PDR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT96-1

  • 描述:

    TRANS NPN/PNP 40V 3A 8SOIC

  • 数据手册
  • 价格&库存
NSV40302PDR2G 数据手册
NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com 40 VOLTS, 6.0 AMPS COMPLEMENTARY LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 7,8 Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 BASE 4 BASE 1 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating COLLECTOR 5,6 3 EMITTER 8 Symbol Max Unit 1 Collector-Emitter Voltage NPN PNP VCEO 40 −40 Vdc Collector-Base Voltage NPN PNP VCBO 40 −40 Vdc SOIC−8 CASE 751 STYLE 16 Emitter-Base Voltage NPN PNP VEBO 6.0 −7.0 Vdc DEVICE MARKING Collector Current − Continuous NPN PNP IC 3.0 −3.0 A Collector Current − Peak NPN PNP ICM 6.0 −6.0 A ESD HBM Class 3B MM Class C Electrostatic Discharge 8 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. C40302 AYWWG G 1 C40302 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSS40302PDR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel NSV40302PDR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 2 1 Publication Order Number: NSS40302P/D NSS40302PDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 576 mW 4.6 mW/°C RqJA 217 °C/W PD 676 mW 5.4 mW/°C RqJA 185 °C/W PD 653 mW 5.2 mW/°C RqJA 191 °C/W PD 783 mW 6.3 mW/°C RqJA 160 °C/W TJ, Tstg −55 to +150 °C SINGLE HEATED Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 10 mm2, 1 oz. copper traces, still air. 100 mm2, 1 oz. copper traces, still air. 1. FR− 4 @ 2. FR− 4 @ 3. Dual heated values assume total power is the sum of two equally powered devices. www.onsemi.com 2 NSS40302PDR2G NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 40 − − 40 − − 6.0 − − − − 0.1 − − 0.1 200 200 180 180 400 350 340 320 − − − − − − − − 0.008 0.044 0.080 0.082 0.011 0.060 0.115 0.115 − 0.780 0.900 − 0.650 0.750 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 5) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE Collector −Emitter Saturation Voltage (Note 5) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 5) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 5) (IC = 0.1 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − 320 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − 40 50 pF td − − 100 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 780 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 110 ns SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NSS40302PDR2G PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −40 − − −40 − − −7.0 − − − − −0.1 − − −0.1 250 220 180 150 380 340 300 230 − − − − − − − − −0.013 −0.075 −0.130 −0.135 −0.017 −0.095 −0.170 −0.170 − −0.780 −0.900 − −0.660 −0.750 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 5) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 5) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 5) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 5) (IC = −0.1 A, VCE = −2.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 250 300 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 50 65 pF td − − 60 ns Rise (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) tr − − 120 ns Storage (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) ts − − 400 ns Fall (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) tf − − 130 ns SWITCHING CHARACTERISTICS Delay (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 4 NSS40302PDR2G NPN TYPICAL CHARACTERISTICS 0.30 0.14 150°C IC/IB = 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.16 25°C 0.12 0.10 −55°C 0.08 0.06 0.04 0.02 IC/IB = 100 0.25 150°C 0.20 0.15 25°C 0.10 −55°C 0.05 0 0 0.001 0.01 0.1 1 0.001 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.0 700 600 150°C (2.0 V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C (5.0 V) 500 25°C (5.0 V) 400 25°C (2.0 V) 300 −55°C (5.0 V) 200 −55°C (2.0 V) −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 100 0.2 0.001 0.01 0.1 1 0.001 10 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 10 1.0 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 0.9 0.01 IC, COLLECTOR CURRENT (A) 1.0 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) IC/IB = 10 0.9 VCE = +2.0 V −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 1 10 0.9 100 mA 0.8 1A 3A 2A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region www.onsemi.com 5 0.1 NSS40302PDR2G NPN TYPICAL CHARACTERISTICS 80 Cobo, OUTPUT CAPACITANCE (pF) 375 350 325 300 275 250 Cibo (pF) 225 200 175 150 1 2 3 4 5 50 40 Cobo (pF) 30 20 0 6 10 15 20 25 30 35 Figure 7. Input Capacitance Figure 8. Output Capacitance 10 ms 100 ms 1.0 0.1 Thermal Limit 0.01 Single Pulse Test at TA = 25°C 0.1 1.0 40 3.5 1 ms 0.01 5 Vcb, COLLECTOR−BASE VOLTAGE (V) 1s IC (A) 60 VEB, EMITTER−BASE VOLTAGE (V) 10 0.001 70 10 0 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) 400 IB = 12 mA 3.0 10 mA 2.5 8 mA 2.0 6 mA 1.5 4 mA 1.0 2 mA 0.5 0 10 0 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VCE (Vdc) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Safe Operating Area Figure 10. Collector Current as a Function of Collector Emitter Voltage www.onsemi.com 6 2.0 NSS40302PDR2G PNP TYPICAL CHARACTERISTICS −0.30 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150°C −0.20 −55°C −0.15 25°C −0.10 −0.05 0 −0.001 −0.01 −0.1 −1 −55°C 25°C 150°C −0.20 −0.15 −0.10 −0.05 0 −0.001 −10 −0.01 −0.1 −1 −10 IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Collector Emitter Saturation Voltage vs. Collector Current −1.1 150°C (5.0 V) 700 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) −1.0 150°C (2.0 V) 600 IC/IB = 10 −0.9 25°C (5.0 V) 500 −55°C −0.8 25°C (2.0 V) 400 25°C −0.7 −0.6 300 −55°C (5.0 V) 150°C −0.5 200 −55°C (2.0 V) 100 −0.4 −0.3 −0.001 0 −0.001 −0.01 −0.1 −1 −10 −0.1 −1 −10 IC, COLLECTOR CURRENT (A) Figure 13. DC Current Gain vs. Collector Current Figure 14. Base Emitter Saturation Voltage vs. Collector Current −2.0 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) −0.9 −0.01 IC, COLLECTOR CURRENT (A) −1.0 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) IC/IB = 100 −0.25 IC, COLLECTOR CURRENT (A) 800 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) −0.25 VCE = −2.0 V −55°C −0.8 −0.7 25°C −0.6 −0.5 150°C −0.4 −0.3 −0.2 −0.001 −0.01 −0.1 −1 −10 −1.8 −1.6 100 mA 1A 2A 3A −1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2 0 −0.0001 −0.001 −0.01 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 15. Base Emitter Turn−On Voltage vs. Collector Current Figure 16. Saturation Region www.onsemi.com 7 −0.1 NSS40302PDR2G PNP TYPICAL CHARACTERISTICS 100 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 350 300 250 200 Cibo (pF) 150 100 80 70 60 50 Cobo (pF) 40 30 0 −1 −2 −3 −4 −5 −6 0 −10 −15 −20 −25 −30 −35 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 17. Input Capacitance Figure 18. Output Capacitance −3.5 1 ms −18 mA IC, COLLECTOR CURRENT (A) 1s 10 ms 100 ms IC (A) −1 −0.1 Thermal Limit −0.01 Single Pulse Test at TA = 25°C −0.01 −5 VEB, EMITTER BASE VOLTAGE (V) −10 −0.001 90 −0.1 −1 −3.0 −40 IB = −20 mA −16 mA −14 mA −12 mA −10 mA −8 mA −2.5 −2.0 −1.5 −6 mA −1.0 −4 mA −0.5 −2 mA 0 −10 −100 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 VCE (Vdc) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 19. Safe Operating Area Figure 20. Output Capacitance www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NSV40302PDR2G 价格&库存

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