NSVJ6904DSB6T1G

N-Channel JFET −25 V, 20 to 40 mA, 40 mS, Dual NSVJ6904DSB6 The NSVJ6904DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance. This AEC−Q101 qualified and PPAP capable device is suited for automotive applications. www.onsemi.com ELECTRICAL CONNECTION N−Channel Features Large | yfs | Small Ciss Ultralow Noise Figure CPH6 Package is Pin−Compatible with SC−74 AEC−Q101 Qualified and PPAP Capable Mounting Area is Greatly Reduced by Incorporating Two JFETs of the NSVJ3910SB3 in One Package of CPH6 Compared with Using Two Separate Packages 6 5 4 1 : Drain 1 2 : NC 3 : Drain 2 4 : Gate 2 5 : Source 1 / Source 2 6 : Gate 1 1 2 3 Typical Applications Specifications 65 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) 12 3 4 LOT No MARKING DIAGRAM • AM Tuner RF Amplification • Low Noise Amplifier 1P • • • • • • CPH6 Symbo l Value Unit Drain to Source Voltage VDSX 25 V Gate to Drain Voltage VGDS −25 V ORDERING INFORMATION Gate Current IG 10 mA See detailed ordering, marking and shipping information in the package dimensions section on page 4 of this data sheet. Drain Current ID 50 mA Allowable Power Dissipation 1 unit PD 400 mW Total Power Dissipation PT 700 mW −55 to +150 °C Parameter Operating Junction and Storage Temperature TJ, TStg CASE 318BD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 July, 2019 − Rev. 1 1 Publication Order Number: NSVJ6904DSB6/D NSVJ6904DSB6 ELECTRICAL CHARACTERISTICS (TJ = 25°C, (Note 1)) Characteristic Symbol Conditions Min Typ Max Unit Gate to Drain Breakdown Voltage V(BR)GDS IG = −10 mA, VDS = 0 V −25 − − V Gate to Source Leakage Current IGSS VGS = −10 V, VDS = 0 V − − −1.0 nA VGS(off) VDS = 5 V, ID = 100 mA −0.6 −1.2 −1.8 V Zero−Gate Voltage Drain Current IDSS VDS = 5 V, VGS = 0 V 20 − 40 mA Forward Transfer Admittance | yfs | VDS = 5 V, VGS = 0 V, f = 1 kHz 30 40 − mS Input Capacitance Ciss VDS = 5 V, VGS = 0 V, f = 1 MHz − 6.0 − pF Reverse Transfer Capacitance Crss − 2.3 − pF − 2.1 2.8 dB Cutoff Voltage Noise Figure NF VDS = 5 V, VGS = 0 V, f = 100 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The specifications shown above are for each individual JFET. www.onsemi.com 2 NSVJ6904DSB6 CHARACTERISTICS 40 30 35 25 −0.2 V −1.0 V 20 DRAIN CURRENT, ID − mA DRAIN CURRENT, ID − mA VGS = 0 V 15 −0.4 V 10 −0.6 V 5 30 0.5 1.0 1.5 DRAIN−TO−SOURCE VOLTAGE, VDS − V −0.2 V 25 −0.4 V 20 15 −0.6 V 10 −0.8 V 0 0 −0.8 V 5 0 0 2.0 2 4 6 8 DRAIN−TO−SOURCE VOLTAGE, VDS − V Figure 1. ID − VDS DRAIN CURRENT, ID − mA 45 50 VDS = 5 V 45 40 IDSS = 40 mA 35 30 30 mA 25 20 15 20 mA 10 −1.5 −1.0 −0.5 0 GATE−TO−SOURCE VOLTAGE, VGS − V 75°C 25 20 15 10 0 −2.0 0.5 VDS = 5 V f = 1 kHz IDSS = 30 mA 2 10 7 5 3 2 2 3 5 7 10 2 3 DRAIN CURRENT, ID − mA −1.5 −1.0 −0.5 0 GATE−TO−SOURCE VOLTAGE, VGS − V 0.5 Figure 4. ID − VGS 3 1.0 1.0 25°C 30 5 FORWARD TRANSFER ADMITTANCE, | yfs | − mS FORWARD TRANSFER ADMITTANCE, | yfs | − mS 7 5 Ta = −25°C 35 Figure 3. ID − VGS 100 VDS = 5 V 40 5 0 −2.0 10 Figure 2. ID − VDS DRAIN CURRENT, ID − mA 50 VGS = 0 V −1.0 V 5 7 100 100 7 VDS = 5 V VGS = 0 V f = 1 kHz 5 3 2 10 10 Figure 5. | yfs | − ID 2 3 5 7 DRAIN CURRENT, IDSS − mA Figure 6. | yfs | − IDSS www.onsemi.com 3 100 NSVJ6904DSB6 CHARACTERISTICS 10 VDS = 5 V ID = 100 mA 7 5 INPUT CAPACITANCE, Ciss − pF CUTOFF VOLTAGE, VGS(off) − V 10 3 2 1.0 7 5 3 2 0.1 10 2 3 5 DRAIN CURRENT, IDSS − mA 7 7 5 3 2 1.0 1.0 100 VGS = 0 V f = 1 MHz 2 3 5 7 10 2 3 5 7 100 DRAIN−TO−SOURCE VOLTAGE, VDS − V 10 Figure 8. Ciss − VGDS ALLOWABLE POWER DISSIPATION, PD, PT− mW REVERSE TRANSFER CAPACITANCE, Crss − pF Figure 7. VGS(off) − IDSS VGS = 0 V f = 1 MHz 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 5 7 100 DRAIN−TO−SOURCE VOLTAGE, VDS − V 800 700 PT 600 500 400 1 unit 300 200 100 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE, Ta − °C Figure 9. Crss − VDS 160 Figure 10. PD, PT − Ta ORDERING INFORMATION Device Order Number NSVJ6904DSB6T1G Specific Device Marking Package Type Shipping† 1P CPH6 (Pb−Free / Halogen Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH6 CASE 318BD ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON65440E CPH6 DATE 30 NOV 2011 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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