NTJD4001NT1

NTJD4001N, NVTJD4001N MOSFET – Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features • • • • • www.onsemi.com Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC Q101 Qualified − NVTJD4001N These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID Max 1.0 W @ 4.0 V 30 V 250 mA 1.5 W @ 2.5 V Applications • • • • Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts SOT−363 SC−88 (6 LEADS) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 250 mA Parameter Continuous Drain Current (Note 1) Steady State TA = 25 °C Power Dissipation (Note 1) Steady State TA = 25 °C PD 272 mW t =10 ms IDM 600 mA TJ, TSTG −55 to 150 °C Pulsed Drain Current TA = 85 °C Operating Junction and Storage Temperature 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View 180 Source Current (Body Diode) IS 250 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 6 1 SOT−363 CASE 419B STYLE 26 TE M G G 1 S1 G1 D2 THERMAL RESISTANCE RATINGS (Note 1) Symbol Value Unit Junction−to−Ambient − Steady State RqJA 458 °C/W Junction−to−Lead − Steady State RqJL 252 Parameter S1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq [1 oz] including traces). TE = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NTJD4001NT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NVTJD4001NT1G SOT−363 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 May, 2019− Rev. 7 1 Publication Order Number: NTJD4001N/D NTJD4001N, NVTJD4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 56 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±1.0 mA VGS(TH) VGS = VDS, ID = 100 mA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 0.8 1.2 −3.2 mV/ °C VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.5 gFS VDS = 3.0 V, ID = 10 mA 80 Input Capacitance CISS 33 COSS VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 20 Output Capacitance 19 32 Reverse Transfer Capacitance CRSS 7.25 12 0.9 1.3 Forward Transconductance W mS CHARGES AND CAPACITANCES VGS = 5.0 V, VDS = 24 V, ID = 0.1 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.2 pF nC 0.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA, RG = 50 W ns 17 23 td(OFF) 94 tf 82 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.45 VGS = 0 V, dIS/dt = 8.0 A/ms, IS = 10 mA 12.4 0.7 V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTJD4001N, NVTJD4001N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 3 V 0.16 2.5 V 0.14 2.25 V 0.12 0.1 0.08 2V 0.06 0.04 1.75 V 1.5 V 0.02 1.25 0.4 0.8 1.2 1.6 VDS = 5 V ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 TJ = 25°C 0.08 0.06 TJ = 125°C 0.04 25°C 0.02 TJ = −55°C 0 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.2 1.4 1.6 2 1.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 125°C 1.0 0.75 TJ = 25°C 0.5 TJ = −55°C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 1 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.2 0.18 1.25 VGS = 4.5 V 0.75 1.6 VGS = 10 V 0.5 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 10000 ID = 0.01 A VGS = 10 V VGS = 0 V 1.4 1000 1.2 1 0.8 0.6 TJ = 150°C 100 0.4 TJ = 125°C 0.2 0 −50 0.205 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 TJ = 25°C 1.0 Figure 3. On−Resistance vs. Drain Current and Temperature 2 2.2 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTJD4001N, NVTJD4001N C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C VGS = 0 V 20 Ciss Coss 10 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS QGD 2 1 0 ID = 0.1 A TJ = 25°C 0.4 0.8 0.2 0.6 QG, TOTAL GATE CHARGE (nC) 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) 0.1 0.08 VGS = 0 V TJ = 25°C 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 9. Diode Forward Voltage vs. Current 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME t,(s) Figure 10. Thermal Response www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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