NTJD5121NT2G

DATA SHEET www.onsemi.com MOSFET – Power, Dual, N-Channel With ESD Protection, SC-88 V(BR)DSS RDS(on) MAX 1.6 W @ 10 V 60 V SC−88 (SOT−363) NTJD5121N, NVJD5121N Features • Low RDS(on) Low Gate Threshold Low Input Capacitance ESD Protected Gate NVJD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View Applications • Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits) MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Symbol Value Unit VDSS 60 V VGS ±20 V ID 295 mA Steady State TA = 25°C TA = 85°C 212 t≤5s TA = 25°C 304 TA = 85°C 219 Steady State TA = 25°C PD t≤5s Pulsed Drain Current SC−88/SOT−363 CASE 419B STYLE 26 6 XXXM G G 1 S1 G1 D2 = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) mW 250 ORDERING INFORMATION See detailed ordering and shipping information ion page 5 of this data sheet. 266 900 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 210 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Gate−Source ESD Rating (HBM) ESDHBM 2000 V Gate−Source ESD Rating (MM) ESDMM 200 V Operating Junction and Storage Temperature 1 XXX M G IDM tp = 10 ms 295 mA 2.5 W @ 4.5 V 60 V, 295 mA • • • • • ID Max Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State RqJA 467 °C/W Junction−to−Ambient – t ≤ 5 s RqJA 412 Junction−to−Lead – Steady State RqJL 252 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). © Semiconductor Components Industries, LLC, 2015 August, 2022 − Rev. 10 1 Publication Order Number: NTJD5121N/D NTJD5121N, NVJD5121N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 60 V V 92 mV/°C TJ = 25°C 1.0 TJ = 125°C 500 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±10 mA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS Gate Resistance RG 1.0 1.7 4.0 mV/°C VGS = 10 V, ID = 500 mA 1.0 1.6 VGS = 4.5 V, ID = 200 mA 1.2 2.5 VDS = 5 V, ID = 200 mA 80 S 536 W 26 pF W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 20 V 4.4 2.5 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.28 td(on) 22 nC 0.9 VGS = 4.5 V, VDS = 25 V, ID = 200 mA 0.2 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 25 V, ID = 200 mA, RG = 25 W tf ns 34 34 32 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.8 TJ = 85°C 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTJD5121N, NVJD5121N TYPICAL PERFORMANCE CURVES (TJ = 25°C UNLESS OTHERWISE NOTED) 1.6 3.8 V 2.4 V 0.8 ID, DRAIN CURRENT (A) 4V 4.2 V 3.6 V 3.4 V 2.2 V 3.2 V 3V 2.8 V 2.6 V 0.4 1 2 3 4 5 TJ = 85°C TJ = 25°C TJ = −55°C 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 0 1 −55°C 2 3 4 5 2.4 VGS = 10 V 2 TJ = 125°C 1.6 TJ = 85°C 1.2 TJ = 25°C 0.8 TJ = −55°C 0.4 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 2.4 1.8 ID = 500 mA 2 1.6 4.5 V 1.2 0.8 TJ = 125°C Figure 2. Transfer Characteristics TJ = 125°C 1.2 25°C 0.2 Figure 1. On−Region Characteristics VGS = 4.5 V 1.6 0.4 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.4 2 0.6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.8 0 ID = 200 mA 2 4 6 8 10 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS ≥ 10 V 1 4.5 V 1.2 0 1.2 TJ = 25°C VGS = 10 5V 10 ID = 0.2 A VGS = 4.5 V and 10 V 1.6 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 150 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance versus Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature www.onsemi.com 3 NTJD5121N, NVJD5121N TYPICAL PERFORMANCE CURVES (TJ = 25°C UNLESS OTHERWISE NOTED) VGS, GATE−TO−SOURCE VOLTAGE (V) 40 C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V 30 Ciss 20 Coss 10 Crss 0 0 4 8 12 16 20 5 ID = 0.2 A TJ = 25°C VDD = 25 V 4 3 2 1 0 0 0.2 DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation VGS, GATE−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) VGS = 0 V 0.1 TJ = 85°C TJ = 25°C 0.4 0.6 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.2 2.5 2.4 ID = 250 mA 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 −50 −25 0 0.8 1 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 10. Threshold Voltage with Temperature Figure 9. Diode Forward Voltage vs. Current r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 0.6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1 0.01 0.4 Qg, TOTAL GATE CHARGE (nC) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME t,(s) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 NTJD5121N, NVJD5121N Table 1. ORDERING INFORMATION Marking Package Shipping† NTJD5121NT1G TF SC−88 (Pb−Free) 3000 / Tape & Reel NTJD5121NT2G TF SC−88 (Pb−Free) 3000 / Tape & Reel NVJD5121NT1G* VTF SC−88 (Pb−Free) 3000 / Tape & Reel NVJD5121NT1G−M06* VTF SC−88 (Pb−Free) 3000 / Tape & Reel Part Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVJD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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