NTJD5121N

NTJD5121N Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 Features • • • • • Low RDS(on) Low Gate Threshold Low Input Capacitance ESD Protected Gate This is a Pb-Free Device http://onsemi.com V(BR)DSS 60 V 2.5 W @ 4.5 V RDS(on) MAX 1.6 W @ 10 V 295 mA ID Max Applications • Low Side Load Switch • DC-DC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 85°C Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms IDM TJ, TSTG IS TL ESD TA = 25°C PD Symbol VDSS VGS ID Value 60 ±20 295 212 304 219 250 266 900 -55 to 150 210 260 1400 mA 1 mW Units V V mA D2 3 G1 2 S1 1 SC-88 (SOT-363) 6 D1 5 G2 4 S2 Top View MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 6 TF M G G 1 S1 G1 D2 TF M G = Device Code = Date Code = Pb-Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) Gate-Source ESD Rating (HBM, Method 3015) °C mA °C V SC-88/SOT-363 CASE 419B STYLE 26 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State Junction-to-Ambient – t ≤ 5 s Symbol RqJA RqJA Value 500 470 Units °C/W ORDERING INFORMATION Device NTJD5121NT1G Package SC-88 (Pb-Free) Shipping† 3000 / Tape & Reel 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 April, 2008 - Rev. 1 Publication Order Number: NTJD5121N/D NTJD5121N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, ref to 25°C VGS = 0 V, VDS = 60 V TJ = 25°C TJ = 125°C 60 92 1.0 500 ±10 mA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.0 1.7 4.0 2.5 V mV/°C VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA 1.0 1.2 80 1.6 2.5 W Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS VDS = 5 V, ID = 200 mA S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 25 V, ID = 200 mA VGS = 0 V, f = 1.0 MHz, VDS = 20 V 26 4.4 2.5 0.9 0.2 0.3 0.28 pF nC td(on) tr td(off) tf VGS = 45 V, VDD = 25 V, ID = 200 mA, RG = 25 W 22 34 34 32 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C TJ = 85°C 0.8 0.7 1.2 V 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD5121N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.6 5V ID, DRAIN CURRENT (A) 4.5 V 1.2 4.2 V 2.4 V 0.8 2.2 V 0.4 4V 3.8 V 3.6 V 3.4 V 3.2 V 3V 2.8 V 2.6 V VGS = 10 1.2 VDS ≥ 10 V 1 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 25°C 0.2 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 125°C -55°C TJ = 25°C 0 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2.4 VGS = 4.5 V 2 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) TJ = 125°C TJ = 85°C TJ = 25°C TJ = -55°C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 2.4 2 1.6 1.2 0.8 0.4 0 0 Figure 2. Transfer Characteristics VGS = 10 V TJ = 125°C TJ = 85°C TJ = 25°C TJ = -55°C 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 3. On-Resistance vs. Drain Current and Temperature 2.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 500 mA 1.8 1.6 1.4 1.2 1 0.8 0.6 2 4 6 8 10 Figure 4. On-Resistance vs. Drain Current and Temperature ID = 0.2 A VGS = 4.5 V and 10 V 2 1.6 4.5 V 1.2 ID = 200 mA 10 V 0.8 VGS, GATE-TO-SOURCE VOLTAGE (V) -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-Resistance versus Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 NTJD5121N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 40 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 30 Ciss 5 ID = 0.2 A TJ = 25°C VDD = 25 V VGS, GATE-TO-SOURCE VOLTAGE (V) 4 3 20 2 10 Coss Crss 1 0 0 4 8 12 16 20 0 0 0.2 0.4 0.6 0.8 1 DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1 VGS = 0 V IS, SOURCE CURRENT (A) 0.1 TJ = 85°C TJ = 25°C 0.01 0.4 0.6 0.8 1 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD5121N PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 HE 1 2 3 -E- C b 6 PL 0.2 (0.008) M L E M A A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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