NTJD1155LT1

NTJD1155L MOSFET – Power, P-Channel, High Side Load Switch with Level-Shift, SC-88 8 V, +1.3 A www.onsemi.com The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF. V(BR)DSS RDS(on) TYP ID MAX 130 mW @ −4.5 V 8.0 V ±1.3 A 170 mW @ −2.5 V 260 mW @ −1.8 V SIMPLIFIED SCHEMATIC 4 2,3 Q2 6 Features • • • • • • Extremely Low RDS(on) P−Channel Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V These Devices are Pb−Free and are RoHS Compliant 1 Rating 1 ON/OFF Voltage (VGS, N−Ch) Continuous Load Current Steady (Note 1) State TA = 25°C Power Dissipation (Note 1) TA = 25°C Steady State Pulsed Load Current Symbol Value Unit VIN 8.0 V VON/OFF 8.0 V IL ±1.3 A TA = 85°C TA = 85°C PIN ASSIGNMENT 0.20 ±3.9 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −0.4 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Characteristic Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 320 °C/W Junction−to−Foot – Steady State (Note 1) RqJF 220 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. May, 2019 − Rev. 6 1 S1 G1 5 S2 4 2 3 D2 D2 ORDERING INFORMATION THERMAL CHARACTERISTICS © Semiconductor Components Industries, LLC, 2012 D1/G2 6 W 0.40 ILM tp = 10 ms TB M G G TB = Device Code M = Date Code 1 G = Pb−Free Package (Note: Microdot may be in either location) ±0.9 PD MARKING DIAGRAM SC−88 (SOT−363) CASE 419B STYLE 30 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Input Voltage (VDSS, P−Ch) Q1 5 1 Device NTJD1155LT1G, NTJD1155LT2G Package Shipping† SC−88 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTJD1155L/D NTJD1155L 1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). www.onsemi.com 2 NTJD1155L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Q2 Drain−to−Source Breakdown Voltage VIN VGS2 = 0 V, ID2 = 250 mA −8.0 Forward Leakage Current IFL Typ Max Unit OFF CHARACTERISTICS VGS1 = 0 V, VDS2 = −8.0 V V TJ = 25°C 1.0 TJ = 125°C 10 Q1 Gate−to−Source Leakage Current IGSS VDS1 = 0 V, VGS1 = ±8.0 V Q1 Diode Forward On−Voltage VSD IS = −0.4 A, VGS1 = 0 V mA ±100 nA −1.1 V 1.5 8.0 V −0.8 ON CHARACTERISTICS ON/OFF Voltage VON/OFF Q1 Gate Threshold Voltage VGS1(th) VGS1 = VDS1, ID = 250 mA 0.4 1.0 V VIN VGS1 = VDS1, ID = 250 mA 1.8 8.0 V mW Input Voltage Q2 Drain−to−Source On Resistance RDS(on) Load Current VON/OFF = 1.5 V IL 175 VIN = 2.5 V IL = 1.0 A 170 220 VIN = 1.8 V IL = 0.7 A 260 320 1.0 VDROP ≤ 0.3 V, VIN = 2.5 V, VON/OFF = 1.5 V 1.0 2,3 Q2 R1 A VOUT C1 6 ON/OFF 130 VDROP ≤ 0.2 V, VIN = 5.0 V, VON/OFF = 1.5 V 4 VIN VIN = 4.5 V IL = 1.2 A 6 5 CO LOAD Q1 1 CI R2 R2 GND Figure 1. Load Switch Application Components Description Values R1 Pullup Resistor Typical 10 kW to 1.0 MW* R2 Optional Slew−Rate Control Typical 0 to 100 kW* Output Capacitance Usually < 1.0 mF Optional In−Rush Current Control Typical ≤ 1000 pF CO, CI C1 *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on. www.onsemi.com 3 NTJD1155L 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0.50 0.45 0.40 0.35 TJ = 125°C VDROP (V) VDROP (V) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C TJ = 125°C 0.30 0.25 0.20 TJ = 25°C 0.15 0.10 0.05 0.5 1.0 1.5 2.5 2.0 0 0 3.0 1.0 0.5 1.5 IL (AMPS) 0.8 IL = 1 A VON/OFF = 1.5 to 8 V 0.6 0.5 0.4 0.3 0.2 TJ = 125°C 0.1 TJ = 25°C 0.0 1.0 2.0 3.0 4.0 5.0 VIN (VOLTS) 6.0 7.0 8.0 0.31 IL = 1 A VON/OFF = 1.5 to 8 V 0.26 0.16 0.11 Vin = 5 V 0.06 0.01 −50 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 44 IL = 1 A VON/OFF = 1.5 to 8 V IL = 1 A VON/OFF = 1.5 V Ci = 10 mF Co = 1 mF 40 36 32 1.3 Vin = 5 V 1.1 Vin = 1.8 V tr 28 24 td(off) 20 16 tf 12 0.9 0.7 −50 −25 Figure 5. On−Resistance Variation with Temperature TIME (ms) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 Vin = 1.8 V 0.21 Figure 4. On−Resistance vs. Input Voltage 1.7 3.0 Figure 3. Vdrop vs. IL @ Vin = 4.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Vdrop vs. IL @ Vin = 2.5 V 0.7 2.5 2.0 IL (AMPS) 8 −25 0 25 50 75 100 125 150 4 0 td(on) 0 TJ, JUNCTION TEMPERATURE (°C) 1 2 3 4 5 6 R2 (kW) Figure 6. Normalized On−Resistance Variation with Temperature Figure 7. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 kW www.onsemi.com 4 7 8 NTJD1155L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 40 22 20 18 32 28 tf 14 12 10 IL = 1 A Von/off = 3 V Ci = 10 mF Co = 1 mF 8 6 4 2 0 20 16 12 tr 1 2 4 3 5 6 td(on) tf 8 4 td(on) 0 tr 24 TIME (ms) TIME (ms) 16 IL = 1 A VON/OFF = 1.5 V Ci = 10 mF Co = 1 mF 36 td(off) 0 8 7 td(off) 1 0 2 3 4 5 6 8 7 R2 (kW) R2 (kW) Figure 8. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 kW Figure 9. Switching Variation R2 @ Vin = 2.5 V, R1 = 20 kW 12 tf 10 TIME (ms) 8 td(off) IL = 1 A Von/off = 3 V Ci = 10 mF Co = 1 mF 6 4 tr 2 0 td(on) 0 1 2 3 5 4 7 6 8 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE R2 (kW) Figure 10. Switching Variation R2 @ Vin = 2.5 V, R1 = 20 kW 10 Normalized to RqJA at Steady State ( 1 inch pad) 1 D = 0.5 0.2 P(pk) 0.1 0.1 0.01 SINGLE PULSE 0.01 0.001 0.02 0.05 t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.1 1 10 SQUARE WAVE PULSE DURATION TIME t, (s) Figure 11. FET Thermal Response www.onsemi.com 5 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative