NTLJD3119CTAG

NTLJD3119C MOSFET – Power, Complementary, WDFN 2X2 mm 20 V/-20 V, 4.6 A/-4.1 A www.onsemi.com Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package Leading Edge Trench Technology for Low On Resistance 1.8 V Gate Threshold Voltage Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device P−Channel −20 V • Synchronous DC−DC Conversion Circuits • Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives Color Display and Camera Flash Regulators Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) Steady State P−Channel Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s t≤5s Steady State t≤5s N−Channel Continuous Drain Current (Note 2) P−Channel Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State Steady State N−Ch P−Ch N−Ch P−Ch TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C Symbol Value Unit VDSS 20 −20 ±8.0 V A PD 3.8 2.8 4.6 −3.3 −2.4 −4.1 1.5 ID 2.3 2.6 ID −2.3 VGS ID ID TA = 85°C TA = 25°C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) May, 2019 − Rev. 5 D2 2.0 A 120 mW @ 1.8 V 1.7 A 100 mW @ −4.5 V −4.1 A 135 mW @ −2.5 V −2.0 A 200 mW @ −1.8 V −1.6 A A W JM M Pin 1 JM = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS D1 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 (Top View) A PD 0.71 W IDM 18 −20 −55 to 150 260 A TL 1 A −1.6 TJ, TSTG MARKING DIAGRAM D1 V °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 3.8 A 85 mW @ 2.5 V 1.9 TA = 85°C Steady TA = 25°C State N−Ch Pulsed Drain Current tp = 10 ms P−Ch Operating Junction and Storage Temperature 65 mW @ 4.5 V WDFN6 CASE 506AN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX N−Channel 20 V Applications • RDS(on) MAX V(BR)DSS 1 ORDERING INFORMATION Device Package Shipping† NTLJD3119CTAG WDFN6 (Pb−Free) 3000/Tape & Reel NTLJD3119CTBG WDFN6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTLJD3119C/D NTLJD3119C 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. www.onsemi.com 2 NTLJD3119C THERMAL RESISTANCE RATINGS Parameter Symbol Max Junction−to−Ambient – Steady State (Note 3) RqJA 83 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 Unit SINGLE OPERATION (SELF−HEATED) °C/W DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) RqJA 58 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 133 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 40 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). www.onsemi.com 3 °C/W NTLJD3119C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P V(BR)DSS N Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V P Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS/TJ IDSS IGSS ID = 250 mA 20 ID = −250 mA −20 V N 10.4 P 9.95 N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V mV/°C 1.0 TJ = 25 °C mA −1.0 10 TJ = 85 °C −10 N VDS = 0 V, VGS = ±8.0 V ±100 P VDS = 0 V, VGS = ±8.0 V ±100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) N VGS = VDS P Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS ID = 250 mA 0.4 0.7 1.0 ID = −250 mA −0.4 −0.7 −1.0 N −3.0 P 2.44 V mV/°C N VGS = 4.5 V , ID = 3.8 A 37 65 P VGS = −4.5 V , ID = −4.1 A 75 100 N VGS = 2.5 V , ID = 2.0 A 46 85 P VGS = −2.5 V, ID = −2.0 A 101 135 N VGS = 1.8 V , ID = 1.7 A 65 120 P VGS = −1.8 V, ID = −1.6 A 150 200 N VDS = 10 V, ID = 1.7 A 4.2 P VDS = −5.0 V , ID = −2.0 A 3.1 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance CISS COSS N VDS = 10 V 271 P VDS = −10 V 531 VDS = 10 V 72 VDS = −10 V 91 N VDS = 10 V 43 P VDS = −10 V 56 N P Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge CRSS QG(TOT) QG(TH) QGS QGD f = 1.0 MHz, VGS = 0 V N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 3.7 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 5.5 N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.3 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 0.7 N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.6 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 1.0 N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 1.0 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 1.4 www.onsemi.com 4 pF nC NTLJD3119C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr N VGS = 4.5 V, VDD = 16 V, ID = 1.0 A, RG = 2.0 W td(OFF) 4.7 11.1 tf 5.8 td(ON) 5.2 tr td(OFF) ns 3.8 VGS = −4.5 V, VDD = −10 V, ID = −2.0 A, RG = 2.0 W P tf 13.2 13.7 19.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N P N P Reverse Recovery Time Charge Time tRR ta Reverse Recovery Charge VGS = 0 V, TJ = 125 °C IS = 1.0 A 0.69 1.0 IS = −1.0 A −0.75 −1.0 IS = 1.0 A 0.52 IS = −1.0 A −0.64 N IS = 1.0 A 10.2 P IS = −1.0 A 16.2 N IS = 1.0 A 6.0 IS = −1.0 A 10.6 IS = 1.0 A 4.2 P Discharge Time VGS = 0 V, TJ = 25 °C VGS = 0 V, dIS / dt = 100 A/ms tb N P IS = −1.0 A 5.6 QRR N IS = 1.0 A 3.0 P IS = −1.0 A 5.7 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 5 V ns nC NTLJD3119C TYPICAL PERFORMANCE CURVES − N−CHANNEL (TJ = 25°C unless otherwise noted) 10 VGS = 4 V to 2.2 V 8 2.0 V TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 10 1.8 V 6 1.6 V 4 1.4 V 2 VDS ≥ 10 V 8 6 TJ = 25°C 4 TJ = 100°C 2 1.2 V 0 0.5 1 1.5 2 2.5 3 3.5 0 4 TJ = −55°C 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 3.8 A 0.09 0.08 0.07 0.06 0.05 0.04 0.03 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.14 TJ = 25°C 0.12 VGS = 1.8 V 0.1 0.08 VGS = 2.5 V 0.06 0.04 VGS = 4.5 V 0.02 0 1 2 10000 ID = 3.8 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.2 1.1 1.0 0.9 4 5 6 7 8 9 10 Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.5 1.3 3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.1 1.4 1.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 6 20 NTLJD3119C VDS = 0 V TJ = 25°C Ciss 500 C, CAPACITANCE (pF) VGS = 0 V 400 300 200 Crss Coss 100 0 10 5 VGS 0 VDS 5 10 15 20 QT 3 VDS 2 QGS 0 IS, SOURCE CURRENT (AMPS) tf 10 tr td(on) 1 10 RG, GATE RESISTANCE (W) 0 4 1 2 3 QG, TOTAL GATE CHARGE (nC) 0 VGS = 0 V TJ = 25°C 1.5 1 0.5 0 0.4 100 4 ID = 3.8 A TJ = 25°C 2 td(off) 8 QGD Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 100 VDD = 16 V ID = 1.0 A VGS = 4.5 V 12 VGS 1 Figure 7. Capacitance Variation t, TIME (ns) 16 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 20 5 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 600 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES − N−CHANNEL (TJ = 25°C unless otherwise noted) 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current www.onsemi.com 7 NTLJD3119C TYPICAL PERFORMANCE CURVES − P−CHANNEL (TJ = 25°C unless otherwise noted) 5 TJ = 25°C −ID, DRAIN CURRENT (AMPS) 4.5 −1.8 V 4 3.5 −1.7 V 3 2.5 −1.6 V 2 −1.5 V 1.5 1 −1.4 V 0.5 −1.3 V −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = −1.9 V to −6 V 0.5 0 1.5 1 2 3 2.5 4 3.5 VDS ≥ 10 V 4 3 2 TJ = 25°C 1 TJ = 125°C 0 4.5 0 Figure 12. Transfer Characteristics 0.09 TJ = 100°C 0.08 TJ = 25°C 0.07 0.06 TJ = −55°C 0.05 0.04 1.0 1.5 2.5 2.0 0.15 TJ = 25°C VGS = −2.5 V 0.1 VGS = −4.5 V 0.05 0 1 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 10000 1.2 1.0 0.8 25 50 75 100 5 Figure 14. On−Resistance versus Drain Current and Gate Voltage ID = −2.2 A VGS = −4.5 V 0 4 −ID, DRAIN CURRENT (A) Figure 13. On−Resistance versus Drain Current −25 3 2 −ID, DRAIN CURRENT (A) 0.6 −50 3 Figure 11. On−Region Characteristics VGS = −4.5 V 1.4 2.5 2 1.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.1 1.6 TJ = −55°C 1 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 5 125 150 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 100 10 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. On−Resistance Variation with Temperature Figure 16. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 8 20 NTLJD3119C VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C Ciss 800 600 400 Crss Coss 200 0 5 VGS 0 VDS 10 5 15 20 QT 4 0 tf tr td(off) td(on) 10 RG, GATE RESISTANCE (W) 10 8 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) 2 1.5 1 0.5 TJ = 150°C 0.1 0.2 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 20. Diode Forward Voltage versus Current TC = 25°C TJ = 150°C SINGLE PULSE 10 ms 100 ms 10 ms *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 VGS = 0 V 1 ms 0.01 6 2.5 1 0.1 4 ID = −2.2 A TJ = 25°C 0 0 100 Figure 19. Resistive Switching Time Variation versus Gate Resistance 100 QGD Figure 18. Gate−To−Source and Drain−To−Source Voltage versus Total Charge −Is, SOURCE CURRENT (AMPS) 100 −ID, DRAIN CURRENT (AMPS) t, TIME (ns) QGS 3 VDD = −15 V ID = −2.2 A VGS = −4.5 V 12 VGS 1 1000 1 VDS 2 Figure 17. Capacitance Variation 1 16 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 10 20 5 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1200 -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES − P−CHANNEL (TJ = 25°C unless otherwise noted) dc 10 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 21. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 9 100 NTLJD3119C EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1000 100 D = 0.5 0.2 0.1 10 *See Note 2 on Page 1 P(pk) 0.05 0.02 1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 Figure 22. Thermal Response www.onsemi.com 10 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE H DATE 25 JAN 2022 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2x2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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