NTMD6P02R2

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P−Channel SOIC−8, Dual Features • • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified SOIC−8 Mounting Information Provided Pb−Free Packages are Available http://onsemi.com 6 AMPERES, 20 VOLTS P−Channel D Applications • Power Management in Portable and Battery−Powered Products, G i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS Rating Symbol Value Unit S Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS "12 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) RqJA PD ID ID PD ID IDM 62.5 2.0 −7.8 −5.7 0.5 −3.89 −40 °C/W W A A W A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) RqJA PD ID ID PD ID IDM 98 1.28 −6.2 −4.6 0.3 −3.01 −35 °C/W W A A W A A Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) RqJA PD ID ID PD ID IDM 166 0.75 −4.8 −3.5 0.2 −2.48 −30 °C/W W A A W A A Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C NTMD6P02R2G SOIC−8 2500 / Tape & Reel (Pb−Free) EAS 500 mJ NTMD6P02R2SG SOIC−8 (Pb−Free) °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, Peak IL = −5.0 Apk, L = 40 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes for 10 seconds TL 260 MARKING DIAGRAM & PIN ASSIGNMENT D1 D1 D2 D2 8 8 1 E6P02x AYWW G G SOIC−8 CASE 751 STYLE 11 1 S1 G1 S2 G2 E6P02 = Specific Device Code x = Blank or S A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † NTMD6P02R2 SOIC−8 2500 / Tape & Reel 2500 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Preferred devices are recommended choices for future use Operating Conditions is not implied. Extended exposure to stresses above the and best overall value. Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds. 2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state. 3. Minimum FR−4 or G−10 PCB, t = steady state. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Publication Order Number: NTMD6P02R2/D NTMD6P02R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)* Characteristic Symbol Min Typ Max Unit −20 − − −11.6 − − − − − − −1.0 −5.0 − − −100 − − 100 −0.6 − −0.88 2.6 −1.20 − − − − 0.027 0.038 0.038 0.033 0.050 − gFS − 15 − Mhos Ciss − 1380 1700 pF Coss − 515 775 Crss − 250 450 td(on) − 15 25 tr − 20 50 td(off) − 85 125 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C) IDSS Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −4.5 Vdc, ID = −6.2 Adc) (VGS = −2.5 Vdc, ID = −5.0 Adc) (VGS = −2.5 Vdc, ID = −3.1 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −6.2 Adc) Vdc mV/°C W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 5 and 6) Turn−On Delay Time (VDD = −10 Vdc, ID = −1.0 Adc, VGS = −10 Vdc, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = −16 Vdc, ID = −6.2 Adc, VGS = −4.5 Vdc, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time Total Gate Charge (VDS = −16 Vdc, VGS = −4.5 Vdc, ID = −6.2 Adc) Gate−Source Charge Gate−Drain Charge tf − 50 110 td(on) − 17 − tr − 65 − td(off) − 50 − tf − 80 − Qtot − 20 35 Qgs − 4.0 − Qgd − 8.0 − ns ns nC BODY−DRAIN DIODE RATINGS (Note 5) Diode Forward On−Voltage (IS = −1.7 Adc, VGS = 0 Vdc) (IS = −1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − −0.80 −0.65 −1.2 − Vdc Diode Forward On−Voltage (IS = −6.2 Adc, VGS = 0 Vdc) (IS = −6.2 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − −0.95 −0.80 − − Vdc trr − 50 80 ns ta − 20 − tr − 30 − QRR − 0.04 − Reverse Recovery Time (IS = −1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. *Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 mC NTMD6P02R2 −4.5 V −3.8 V −10 V 10 10 −2.1 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 12 TJ = 25°C 8.0 −3.1 V −2.5 V 6.0 −1.8 V 4.0 2.0 0 −1.5 V VGS = −1.3 V 0 VDS ≥ −10 V 8.0 6.0 25°C 4.0 100°C 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ = −55°C 2.0 0 1.0 1.5 2.0 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.05 ID = −6.2 A TJ = 25°C 0.04 0.03 0.02 0.01 0 0 2.0 4.0 6.0 8.0 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.05 TJ = 25°C VGS = −2.5 V 0.04 −2.7 V 0.03 −4.5 V 0.02 0.01 0 1.6 1000 ID = −6.2 A VGS = −4.5 V 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 4.0 6.0 8.0 10 −ID, DRAIN CURRENT (AMPS) 12 14 Figure 4. On-Resistance versus Drain Current and Gate Voltage −I DSS , LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance versus Gate−To−Source Voltage 2.0 150 VGS = 0 V TJ = 125°C 100 100°C 10 1 25°C 0.1 0.01 4 Figure 5. On−Resistance Variation with Temperature 8 12 16 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 VDS = 0 V C, CAPACITANCE (pF) 4500 4000 VGS = 0 V TJ = 25°C Ciss 3500 3000 2500 Crss 2000 Ciss 1500 1000 Coss Crss 500 0 10 5.0 0 5.0 10 15 20 −VGS −VDS 5 4 16 VDS 3 Q1 VGS 12 Q2 8 2 ID = −6.2 A VDS = −16 V VGS = −4.5 V TJ = 25°C 1 4 0 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 0 5.0 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 1000 VDD = −16 V ID = −1.0 A VGS = −10 V VDD = −16 V ID = −6.2 A VGS = −4.5 V td(off) tf t, TIME (ns) t, TIME (ns) 20 QT V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5000 VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) NTMD6P02R2 100 tr 100 tf tr td(off) td(on) td(on) 10 10 1 10 100 1 10 100 RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Resistive Switching Time Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS 100 −ID , DRAIN CURRENT (AMPS) −IS, SOURCE CURRENT (AMPS) 5 VGS = 0 V TJ = 25°C 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.0 ms 10 10 ms 1 0.1 0 VGS = 2.5 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1 dc 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTMD6P02R2 di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 13. Diode Reverse Recovery Waveform TYPICAL ELECTRICAL CHARACTERISTICS Rthja(t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 0.1 D = 0.5 0.2 0.1 0.05 Normalized to qja at 10s. Chip 0.02 0.01 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F 0.01 SINGLE PULSE Ambient 0.001 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 t, TIME (s) Figure 14. Thermal Response http://onsemi.com 5 1.0E+01 1.0E+02 1.0E+03 NTMD6P02R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 0.25 (0.010) S B M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8 _ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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