NTMFS4835NT1G

NTMFS4835N Power MOSFET Features 30 V, 104 A, Single N−Channel, SO−8FL • • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* V(BR)DSS 30 V http://onsemi.com RDS(ON) MAX 3.5 mW @ 10 V 5.0 mW @ 4.5 V D (5,6) ID MAX 104 A Applications Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 20 14 2.27 12 9.0 0.89 104 75 62.5 208 −55 to +150 52 6 392 W A °C A V/ns mJ W A W A Unit V V A G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4835N AYWWG G D D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 28 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ORDERING INFORMATION Device NTMFS4835NT1G NTMFS4835NT3G Package SO−8FL (Pb−Free) SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 6 1 Publication Order Number: NTMFS4835N/D NTMFS4835N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note ) 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA Value 2.0 55.1 140.1 °C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to 11.5 V VGS = 4.5 V Forward Transconductance gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 12 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 15 V, ID = 15 A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 16 31 22 13 10 23 30 10 ns ns 3100 670 360 22 4.7 8.3 8.8 52 nC 39 nC pF VGS = 0 V, VDS = 24 V TJ = 25 °C TJ = 125°C VGS = 0 V, ID = 250 mA 30 22.4 1.0 10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.5 1.9 5.3 2.9 2.5 4.3 3.9 21 2.5 V mV/°C 3.5 mW 5.0 S 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4835N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LG RG TA = 25°C VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25°C TJ = 125°C 0.77 0.70 27 15 12 18 nC 50 ns 1.0 V Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 0.65 0.005 1.84 1.3 5.0 nH nH nH W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4835N TYPICAL PERFORMANCE CURVES 170 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 150 130 110 90 70 50 30 10 0 VGS = 5.0 to 10 V TJ = 25°C 4.0 V 170 150 130 110 90 70 50 30 10 0 TJ = 25°C TJ = 125°C 0 1 2 TJ = −55°C 3 4 5 6 VDS ≥ 10 V 3.5 V 3.2 V 3.0 V 2.8 V 2.6 V 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.030 0.025 0.020 0.015 0.010 0.005 0 2 4 6 8 10 12 ID = 30 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 10 15 Figure 2. Transfer Characteristics TJ = 25°C VGS = 4.5 V VGS = 11.5 V 20 25 30 35 40 45 50 55 60 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.0 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 1.5 10,000 100,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 1.0 1,000 TJ = 125°C 100 0.5 0 −50 10 −25 0 25 50 75 100 125 150 4 8 12 16 20 24 28 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTMFS4835N TYPICAL PERFORMANCE CURVES 5000 4500 C, CAPACITANCE (pF) 4000 3500 3000 2500 2000 1500 1000 500 0 15 10 5 0 5 VGS VDS 10 15 20 Coss 25 Crss Ciss TJ = 25°C 12 QT VGS VDS 10 8 6 4 2 0 Qgs Qgd ID = 30 A TJ = 25°C 0 5 10 15 20 25 30 35 40 45 QG, TOTAL GATE CHARGE (nC) 50 20 18 16 14 12 10 8 6 4 2 0 55 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Ciss 30 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 VDS = 15 V ID = 15 A VGS = 11.5 V Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 30 IS, SOURCE CURRENT (AMPS) VGS = 0 V 25 TJ = 25°C 20 15 10 5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1.1 td(off) tf tr t, TIME (ns) 100 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) 400 360 320 280 240 200 160 120 80 40 0 Figure 10. Diode Forward Voltage vs. Current ID = 28 A 100 10 ms 100 ms 10 VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 ms 10 ms dc 1 0.1 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTMFS4835N TYPICAL PERFORMANCE CURVES 1000 I D, DRAIN CURRENT (AMPS) 100 25°C 10 100°C 125°C 1 1 10 100 1000 PULSE WIDTH (ms) 10000 Figure 13. Avalanche Characteristics http://onsemi.com 6 NTMFS4835N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA−01 ISSUE D 0.20 C D 2 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X A B 5 2X D1 0.20 C E1 2 E c 4X q A1 1 2 3 4 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ DETAIL A SOLDERING FOOTPRINT* 1.270 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 3X b e/2 1 4 0.750 4X 0.10 0.05 CAB c L 1.000 4X 0.965 1.330 0.495 3.200 0.475 2X 2X K E2 L1 6 5 0.905 4.530 2X M G D2 BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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