NTMFS4C025NT1G

NTMFS4C025N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 3.41 mW @ 10 V 30 V 69 A 4.88 mW @ 4.5 V Applications • CPU Power Delivery • DC−DC Converters D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Unit G (4) Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V S (1,2,3) ID 20.0 A N−CHANNEL MOSFET Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.55 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 31.6 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 80°C 14.9 TA = 80°C TA = 25°C Steady State TA = 25°C PD ID TA = 80°C 6.4 W 1 11 A 8.2 TA = 25°C PD 0.77 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 69 A Power Dissipation RqJC (Note 1) TC = 25°C PD 30.5 W TA = 25°C, tp = 10 ms IDM 166 A TC =80°C Current Limited by Package TA = 25°C 52 IDmax 80 A TJ, TSTG −55 to +150 °C IS 28 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL =37 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 68 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) D S SO−8 FLAT LEAD S CASE 488AA S STYLE 1 G 23.7 Power Dissipation RqJA (Note 2) Pulsed Drain Current MARKING DIAGRAMS D 4C025 AYWZZ D D A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping† NTMFS4C025NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C025NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 May, 2019 − Rev. 2 1 Publication Order Number: NTMFS4C025N/D NTMFS4C025N 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 27 Apk, EAS = 36 mJ. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Case (Drain) RqJC 4.1 Junction−to−Ambient – Steady State (Note 4) RqJA 49 Junction−to−Ambient – Steady State (Note 5) RqJA 162.3 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 19.5 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.4 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 3.8 mV/°C VGS = 10 V ID = 30 A 2.82 3.41 VGS = 4.5 V ID = 25 A 4.01 4.88 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25°C 58 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 1683 VGS = 0 V, f = 1 MHz, VDS = 15 V 841 VGS = 0 V, VDS = 15 V, f = 1 MHz 0.023 CRSS 40 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 11.6 Threshold Gate Charge QG(TH) 2.6 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Plateau Voltage Total Gate Charge pF VGS = 4.5 V, VDS = 15 V; ID = 30 A 4.7 nC 4.0 VGP QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 3.1 V 26 nC NTMFS4C025N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 32 tf 5.0 td(ON) 8.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 18 28 ns 24 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.63 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 17 17 22 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTMFS4C025N 80 4.0 V 3.8 V TJ = 25°C 70 ID, DRAIN CURRENT (A) 4.5 V to 10 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V VGS = 2.6 V 0 1 2 3 4 40 30 TJ = 25°C 20 TJ = 125°C TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 0.016 0.014 0.012 0.010 0.008 0.006 0.004 4 5 6 7 8 9 10 4.5 0.0060 0.0055 TJ = 25°C VGS = 4.5 V 0.0050 0.0045 0.0040 VGS = 10 V 0.0035 0.0030 0.0025 0.0020 10 20 30 40 50 60 70 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.018 3 60 0 5 0.020 0.002 VDS = 5 V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1.6 1.5 2000 VGS = 10 V ID = 30 A 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 Ciss 1800 C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1600 1400 Coss 1200 1000 800 600 400 200 −25 0 25 50 75 100 125 150 VGS = 0 V TJ = 25°C 0 Crss 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation www.onsemi.com 4 30 NTMFS4C025N 1000 10 VGS = 10 V VDD = 15 V ID = 15 A QT 8 6 QGD QGS 4 0 0 2 4 6 8 1 100 RG, GATE RESISTANCE (W) Figure 8. Resistive Switching Time Variation vs. Gate Resistance 1000 0 V < VGS < 10 V VGS = 0 V ID, DRAIN CURRENT (A) 16 14 TJ = 25°C TJ = 125°C 12 10 8 6 4 0.4 0.5 0.6 0.7 0.8 0.9 100 10 ms 100 ms 10 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 1.0 0.01 0.1 dc 1 10 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 36 ID = 27 A 32 28 24 20 16 12 8 4 0 10 QG, TOTAL GATE CHARGE (nC) GFS (S) IS, SOURCE CURRENT (A) 1 Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 18 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) td(on) 10 10 12 14 16 18 20 22 24 26 20 2 0 tf tr VGS = 10 V VDD = 15 V ID = 30 A TJ = 25°C 2 td(off) 100 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 25 50 75 100 125 150 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 TJ, STARTING JUNCTION TEMPERATURE (°C) ID (A) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature Figure 12. GFS vs. ID www.onsemi.com 5 45 50 55 60 NTMFS4C025N TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 10 1 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03 PULSE WIDTH (sec) Figure 13. Avalanche Characteristics 100 Duty Cycle = 0.5 R(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 14. Thermal Response www.onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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