NTMFS4C05NT1G-001

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS Applications 30 V 78 A 5.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage D (5−8) Symbol Value Unit VDSS 30 V VGS ±20 V ID 21.7 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.57 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 34.8 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 80°C TA = 80°C TA = 25°C S (1,2,3) PD ID 6.6 11.9 8.9 1 0.77 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 78 A Power Dissipation RqJC (Note 1) TC = 25°C PD 33 W TA = 25°C, tp = 10 ms IDM 174 A IDmax 80 A TJ, TSTG −55 to +150 °C IS 30 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 20 V, IL = 41 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 84 mJ TL 260 °C TC =80°C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) September, 2014 − Rev. 5 D 4C05N AYWZZ D D DFN5 5x6 (SO−8 FLAT LEAD) CASE 506CX 58 A Y W ZZ 1 4C05N AAYWZZ = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C, VGS = 20 V, IL = 29 A, EAS = 42 mJ. © Semiconductor Components Industries, LLC, 2014 D S SO−8 FLAT LEAD S CASE 488AA S STYLE 1 G A PD Operating Junction and Storage Temperature MARKING DIAGRAMS W TA = 25°C TA = 25°C N−CHANNEL MOSFET 26.0 TA = 80°C Current Limited by Package G (4) 16.3 Power Dissipation RqJA (Note 2) Pulsed Drain Current ID MAX 3.4 mW @ 10 V • CPU Power Delivery • DC−DC Converters Steady State RDS(ON) MAX 1 Device Package Shipping† NTMFS4C05NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C05NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NTMFS4C05NT1G−001 SO−8 FL (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C05N/D NTMFS4C05N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 3.8 Junction−to−Ambient – Steady State (Note 4) RqJA 48.6 Junction−to−Ambient – Steady State (Note 5) RqJA 161.7 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 19 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 12 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 1.3 VGS(TH)/TJ RDS(on) 5.1 mV/°C VGS = 10 V ID = 30 A 2.7 3.4 VGS = 4.5 V ID = 30 A 4.0 5.0 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A Gate Resistance RG TA = 25°C 68 0.3 1.0 mW S 2.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1972 VGS = 0 V, f = 1 MHz, VDS = 15 V 1215 pF 59 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 14 Threshold Gate Charge QG(TH) 3.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.0 Gate Plateau Voltage VGP 3.1 V 30 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.030 6.0 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 11 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32 21 7.0 http://onsemi.com 2 ns NTMFS4C05N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 8.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 26 5.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.77 TJ = 125°C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 40.2 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 20.3 ns 19.9 30.2 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4C05N 0.028 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 3.0 TJ = 25°C 3.8 V 3.6 V 4 V to 6.5 V ID, DRAIN CURRENT (A) 140 130 10 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 3.4 V 3.2 V 3.0 V 2.8 V 2.6 V 1 2 3 5 4 140 130 VDS = 5 V 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 2.0 2.5 3.0 3.5 4.0 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 4.0 5.0 6.0 7.0 8.0 9.0 10 4.5 0.008 TJ = 25°C 0.007 0.006 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 1.7 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C 1.5 Figure 1. On−Region Characteristics Figure 3. On−Resistance vs. VGS 1.5 TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125°C 100 TJ = 85°C 0.9 0.8 0.7 −50 10 −25 0 25 50 75 100 125 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4C05N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C 2750 2500 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 3000 2250 Ciss 2000 1750 1500 1250 1000 Coss 750 500 250 0 Crss 0 5 10 15 20 25 30 QT 8 6 4 Qgd Qgs TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 4 8 12 16 24 28 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 32 20 VDD = 15 V ID = 15 A VGS = 10 V IS, SOURCE CURRENT (A) 18 td(off) td(on) 100 tr tf 10 VGS = 0 V 16 14 12 10 8 6 4 TJ = 125°C TJ = 25°C 2 1 1 10 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 10 ms 1 ms 10 ms 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 0.01 0.01 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 ms 0.1 0.5 RG, GATE RESISTANCE (W) 100 1 0 0.4 100 1000 ID, DRAIN CURRENT (A) 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 10 100 45 ID = 29 A 40 35 30 25 20 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4C05N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 120 ID, DRAIN CURRENT (A) 100 GFS (S) 80 60 40 20 0 0 10 20 30 40 50 60 70 TA = 25°C 1 1.E−07 80 TA = 85°C 10 1.E−06 1.E−05 1.E−04 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 1.E−03 NTMFS4C05N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE L 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 8X C e SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 3X DETAIL A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN RECOMMENDED SOLDERING FOOTPRINT* 2X 0.495 b 0.10 C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.15 6.00 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 4.560 2X 1.530 e/2 L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTMFS4C05N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506CX ISSUE O 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.15 C D A 3 B D1 0.30 C ÉÉÉ ÉÉÉ ÉÉÉ PIN 1 IDENTIFIER 2X E1 E 3 MILLIMETERS MIN MAX 0.90 1.00 0.30 0.50 0.11 0.22 5.30 BSC 4.80 5.20 4.05 4.45 6.00 BSC 4.80 5.20 3.30 3.70 1.27 BSC 0.70 0.90 0.90 1.30 0.50 0.70 DIM A b c D D1 D2 E E1 E2 e G K L TOP VIEW A 0.10 C SOLDERING FOOTPRINT* 0.05 C c C SIDE VIEW SEATING PLANE 8X e/2 e 1 4X 2.10 b 0.10 C A B 4.74 2X 0.05 C 4 5.46 2X 0.43 6.59 0.79 K L 1 4X E2 4X 1.15 G 4X 0.75 1.27 PITCH *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. D2 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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