NTMT090N65S3HF

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Other names and brands may be claimed as the property of others. MOSFET - Power, N-Channel, SUPERFET) III, FRFET) 650 V, 36 A, 90 mW NTMT090N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional components and improve system reliability. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). Features • • • • • • 700 V @ TJ = 150°C Typ RDS(on) = 75 m Ultra Low Gate Charge (Typ. Qg = 66 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS(ON) MAX ID MAX 650 V 90 m @ 10 V 36 A D G S1 S1: Driver Source S2: Power Source S2 POWER MOSFET S2 S2 S1 G Power88 PQFN4 8X8 2P CASE 483AP MARKING DIAGRAM Applications • • • • Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar Lighting / Charger / Adapter NTMT090 N65S3HF AWLYWW NTMT090N65S3HF = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 November, 2020 − Rev. 0 1 Publication Order Number: NTMT090N65S3HF/D NTMT090N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 36 A Continuous (TC = 100°C) 22.8 IDM Drain Current 90 A EAS Single Pulsed Avalanche Energy (Note 2) 440 mJ IAS Avalanche Current (Note 2) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 2.72 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Pulsed (Note 1) Power Dissipation (TC = 25°C) 272 W 2.176 W/°C −55 to +150 °C 300 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.6 A, RG = 25  starting TJ = 25°C 3. ISD ≤ 18 A, di/dt ≤ 100 A/s, VDD ≤ 400 V, starting TJ = 25°C THERMAL CHARACTERISTICS Symbol Parameter Value Unit RJC Thermal Resistance, Junction to Case, Max. 0.46 °C/W RJA Thermal Resistance, Junction to Ambient, Max. (Note 4) 45 4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material. ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† NTMT090N65S3HF NTMT090N65S3HF Power88 13” 13.3 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NTMT090N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage BVDSS /TJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C − 0.63 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 A VDS = 520 V, TC = 125 °C − 14 VGS = ±30 V, VDS = 0 V − − ±100 nA 3.0 − 5.0 V IGSS Gate to Source Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.86 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18 A − 75 90 m Forward Transconductance VDS = 20 V, ID = 18 A − 22 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 2930 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 61 − pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 569 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 110 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 18 A, VGS = 10 V (Note 5) − 66 − nC − 21 − nC − 25 − nC f = 1 MHz − 1.8 −  VDD = 400 V, ID = 18 A, VGS = 10 V, RGEN = 4.7  (Note 5) − 31 − ns − 19 − ns Turn-Off Delay Time − 75 − ns Fall Time − 3.1 − ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time Rise Time SOURCE−DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current − − 36 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 90 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 18 A − − 1.3 V trr Reverse Recovery Time − 95 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18 A, diF/dt = 100 A/s − 379 − nC IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTMT090N65S3HF TYPICAL CHARACTERISTICS 200 10 ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 1 VDS = 20 V 250 ms Pulse Test o 150 C 10 o 25 C o −55 C 250 ms Pulse Test o TC = 25 C 0.1 0.1 1 10 VDS, Drain−Source Voltage[V] 1 20 2 3 Figure 1. On−Region Characteristics 1000 o 0.15 VGS = 10 V VGS = 20 V 0.05 0.00 0 20 40 60 80 10 o 25 C 0.1 o 0.0 10 VGS, Gate−Source Voltage [V] 10000 Ciss 1000 Coss 100 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 1 10 100 VDS, Drain-Source Voltage [V] 2.0 1000 Figure 5. Capacitance Characteristics ID = 18 A 8 VDS = 130 V VDS = 400 V 6 4 2 0 0.1 0.1 0.5 1.0 1.5 VSD , Body Diode Forward Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 Capacitances [pF] −55 C 0.01 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1 o 150 C 1 0.001 100 250 ms Pulse Test 100 ID, Drain Current [A] 10 VGS = 0 V TC = 25 C 0.10 9 Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [ W ] 0.20 4 5 6 7 8 VGS, Gate-Source Voltage[V] 0 10 20 30 40 50 60 Qg, Total Gate Charge [nC] 70 Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTMT090N65S3HF TYPICAL CHARACTERISTICS 2.5 VGS = 0 V ID = 15 mA RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −50 0 50 100 VGS = 10 V ID = 18 A 2.0 1.5 1.0 0.5 0.0 150 −50 o TJ, Junction Temperature [ C] 50 100 150 o Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 40 200 100 ID, Drain Current [A] 0 TJ, Junction Temperature [ C] 30ms ID, Drain Current [A] 100ms 1ms 10 10ms Operation in This Area is Limited by R DS(on) DC 1 o 30 20 10 TC = 25 C o 0.1 TJ = 150 C Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 0 25 1000 Figure 9. Maximum Safe Operating Area EOSS [ mJ] 15 10 5 0 130 260 390 520 VDS, Drain to Source Voltage [V] 150 Figure 10. Maximum Drain Current vs. Case Temperature 20 0 50 75 100 o 125 TC, Case Temperature [ C] 650 Figure 11. Eoss vs. Drain−to−Source Voltage www.onsemi.com 5 NTMT090N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 DUTY CYCLE−DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 ZJC(t) = r(t) x RJC RJC = 0.46 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −5 10 −4 10 −3 10 −2 −1 10 10 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 t, RECTANGULAR PULSE DURATION (sec) 1 10 2 10 NTMT090N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTMT090N65S3HF + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 8 NTMT090N65S3HF PACKAGE DIMENSIONS PQFN4 8X8, 2P CASE 483AP ISSUE O www.onsemi.com 9 NTMT090N65S3HF SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 10 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative