NTP7D3N15MC

MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 7.3 mW, 101 A NTP7D3N15MC Features • • • • • • www.onsemi.com Shielded Gate MOSFET Technology Max RDS(on) = 7.3 mW at VGS = 10 V, ID = 62 A 50% Lower Qrr than other MOSFET Suppliers Lowers Switching Noise/EMI 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 150 V 7.3 mW @ 10 V 101 A D Typical Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V ID 101 A Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Steady State Steady State MARKING DIAGRAM 4 4 Drain TC = 25°C PD 166 W ID 12.1 A TA = 25°C PD 2.4 W IDM 574 A TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (IL = 20 Apk, L = 3 mH) EAS 600 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current N−CHANNEL MOSFET TC = 25°C, tp = 100 ms Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 1 AYWWZZ NTP 7D3N15MC TO−220 CASE 221A 2 1 Gate 3 3 Source 2 Drain NTP7D3N15MC = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device NTP7D3N15MC Package Shipping† TO−220 (Pb−Free) 800 / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2018 May, 2020 − Rev. 0 1 Publication Order Number: NTP7D3N15MC/D NTP7D3N15MC THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 62.5 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 150 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 120 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V V 71 TJ = 25°C mV/°C 1.0 ±100 mA nA ON CHARACTERISTICS VGS(TH) VGS = VDS, ID = 342 mA VGS(TH)/TJ ID = 342 mA, ref to 25°C −7.3 RDS(on) VGS = 10 V, ID = 62 A 6.2 7.3 VGS = 8 V, ID = 31 A 6.6 8.4 VDS = 10 V, ID = 62 A 119 Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance gFS 2.5 4.5 V mV/°C mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 4250 Reverse Transfer Capacitance CRSS 15 Gate−Resistance RG 0.8 Total Gate Charge QG(TOT) 53 Threshold Gate Charge QG(TH) 14 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 8.5 Plateau Voltage VGP 5.8 V Output Charge QOSS 133 nC VGS = 0 V, f = 1 MHz, VDS = 75 V VGS = 10 V, VDS = 75 V; ID = 62 A VDD = 75 V, VGS = 0 V 1250 pF 1.6 W nC 23 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 27 VGS = 10 V, VDD = 75 V, ID = 62 A, RG = 4.7 W tf 8.5 ns 33 5.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 62 A TJ = 25°C VGS = 0 V, VDD = 75 V dIS/dt = 300 A/ms, IS = 62 A VGS = 0 V, VDD = 75 V dIS/dt = 1000 A/ms, IS = 62 A 0.93 1.2 V 55 ns 247 nC 50 ns 720 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTP7D3N15MC TYPICAL CHARACTERISTICS 10 V 6 7.0 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 240 ID, DRAIN CURRENT (A) 8.0 V 180 6.0 V 120 VGS = 5.5 V 60 0 0 4 2 8 6 10 Pulse Duration = 250 ms Duty Cycle = 0.5% Max 4 3 8V 7V 2 1 0 10 V 0 60 180 120 240 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 40 2.2 RDS(on), ON−RESISTANCE (mW) ID = 62 A VGS = 10 V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 240 0 25 50 75 30 20 TJ = 150°C 10 TJ = 25°C 4 6 5 8 7 9 10 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage VDS = 10 V 180 120 TJ = 25°C 60 TJ = 175°C 2 ID = 62 A 0 100 125 150 175 IS, REVERSE DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 5 ID, DRAIN CURRENT (A) 0.6 −75 −50 −25 ID, DRAIN CURRENT (A) 6V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.4 0 VGS = 5.5 V 3 4 TJ = −55°C 5 6 7 300 10 1 0.1 TJ = 175°C 0.01 0.001 8 VGS = 0 V 100 TJ = −55°C TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.4 NTP7D3N15MC 10 10K VDD = 50 V ID = 62 A VDD = 75 V 8 VDD = 100 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 6 4 2 0 15 0 45 30 10 1 0.1 100 150 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 100K PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) CRSS Qg, GATE CHARGE (nC) 90 VGS = 8 V 60 30 RqJC = 0.9°C/W 50 25 75 100 125 10K 1K 100 10 0.00001 175 150 0.0001 0.001 0.01 TC, CASE TEMPERATURE (°C) t, PULSE WIDTH (s) Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power 100 0.1 1 1000 TJ(initial) = 25°C ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 100 1 60 VGS = 10 V TJ(initial) = 100°C TJ(initial) = 150°C 10 1 COSS 1K f = 1 MHz VGS = 0 V 120 0 CISS 0.001 0.01 0.1 1 10 100 1000 10 ms 100 100 ms 10 TC = 25°C Single Pulse RqJC = 0.9°C/W RDS(on) Limit Thermal Limit Package Limit 1 0.1 0.1 1 1 ms 10 ms 100 ms/DC 10 100 200 tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Unclamped Inductive Switching Capability Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 NTP7D3N15MC TYPICAL CHARACTERISTICS ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 0.001 t1 Single Pulse 0.00001 t2 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Impedance www.onsemi.com 5 Notes: RqJC = 0.9°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AJ DATE 05 NOV 2019 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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