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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power,
N‐Channel, SUPERFET) III,
FAST
650 V, 165 mW, 19 A
NTPF165N65S3H
www.onsemi.com
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET FAST series helps
minimize various power systems and improve system efficiency.
VDSS
RDS(ON) MAX
ID MAX
650 V
165 mW @ 10 V
19 A
D
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ. RDS(on) = 132 mW
Ultra Low Gate Charge (Typ. Qg = 35 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 326 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
Applications
•
•
•
•
G
S
G
D
S
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
TO−220 FULLPAK
CASE 221D
MARKING DIAGRAM
T165N
65S3H
AYWWZZ
T165N65S3H = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
ZZ
= Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
March, 2021 − Rev. 2
1
Publication Order Number:
NTPF165N65S3H/D
NTPF165N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy (Note 2)
IAS
Avalanche Current (Note 2)
EAR
dv/dt
PD
Value
Unit
650
V
DC
±30
V
AC (f > 1 Hz)
±30
V
Continuous (TC = 25°C)
19*
A
Continuous (TC = 100°C)
12*
Pulsed (Note 1)
53*
A
163
mJ
4
A
Repetitive Avalanche Energy (Note 1)
1.42
mJ
MOSFET dv/dt
120
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
Power Dissipation
(TC = 25°C)
Derate Above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
33
W
0.27
W/°C
−55 to +150
°C
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 4 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 9.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
3.69
_C/W
RqJA
Thermal Resistance, Junction to Ambient, Max.
62.5
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
NTPF165N65S3H
T165N65S3H
TO−220
FULLPAK
50 Units / Tube
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2
NTPF165N65S3H
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0 V, ID = 1 mA, TJ = 25_C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150_C
700
V
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
IGSS
Gate to Body Leakage Current
0.63
V/_C
1
mA
±100
nA
4.0
V
165
mW
1.0
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 9.5 A
132
Forward Transconductance
VDS = 20 V, ID = 9.5 A
24
S
VDS = 400 V, VGS = 0 V, f = 250 kHz
1808
pF
27
pF
gFS
VGS = VDS, ID = 1.6 mA
2.4
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
326
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
47
pF
35
nC
8.4
nC
9.2
nC
1.1
W
20
ns
8.5
ns
68
ns
3
ns
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 400 V, ID = 9.5 A, VGS = 10 V
(Note 4)
f = 1 MHz
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
VDD = 400 V, ID = 9.5 A,
VGS = 10 V, Rg = 10 W
(Note 4)
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Maximum Continuous Source to Drain Diode Forward Current
19
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
53
A
VSD
Source to Drain Diode Forward
Voltage
1.2
V
IS
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 9.5 A
VDD = 400 V, ISD = 9.5 A,
dIF/dt = 100 A/ms
264
ns
3.6
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTPF165N65S3H
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
VGS = 10.0 V
VGS = 7.0 V
30
VGS = 5.0 V
VGS = 6.0 V
20
VGS = 4.5 V
10
0
100
250 ms Pulse Test
TC = 25°C
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
VGS = 4.0 V
0
10
5
150°C
−55°C
1
3
2
VDS, DRAIN−SOURCE VOLTAGE (V)
VGS, GATE−SOURCE VOLTAGE (V)
100
IS, REVERSE DRAIN CURRENT (A)
RDS(on), DRAIN−SOURCE
ON−RESISTANCE (W)
TC = 25°C
0.2
VGS = 10 V
VGS = 20 V
0.1
0
20
10
0
30
40
150°C
25°C
1
−55°C
0.1
0.0
VGS = 0 V
f = 250 kHz
VGS, GATE−SOURCE VOLTAGE (V)
CAPACITANCE (pF)
104
Ciss
102
101
Coss
100
Crss
10−1
0
100
200
300
400
0.4
0.6
0.8
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
103
0.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
105
VGS = 0 V
250 ms Pulse Test
10
ID, DRAIN CURRENT (A)
106
6
5
4
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.3
25°C
10
20
15
VDS = 20 V
250 ms Pulse Test
600
500
10
ID = 9.5 A
8
VDS = 130 V
6
VDS = 400 V
4
2
0
0
10
20
30
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
40
NTPF165N65S3H
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
3.0
VGS = 0 V
ID = 10 mA
RDS(ON), DRAIN−SOURCE
ON−RESISTANCE (NORMALIZED)
NORMALIZED DRAIN−SOURCE
BREAKDOWN VOLTAGE
1.2
1.1
1.0
0.9
0.8
−75 −50 −25
0
25
50
75
100 125 150 175
1.5
1.0
0.5
0.0
−75 −50 −25
25
50
75
100 125 150 175
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
25
10 ms
10
100 ms
1 ms
Operation in this
Area is Limited
by RDS(on)
1
10 ms
DC
0.1
TC = 25°C
TJ = 150°C
Single Pulse
1
100
10
1000
20
15
10
5
0
25
7
6
5
4
3
2
1
0
100
200
300
400
75
100
125
Figure 10. Maximum Drain Current vs. Case
Temperature
Figure 9. Maximum Safe Operating Area
0
50
TC, CASE TEMPERATURE (°C)
VDS, DRAIN−SOURCE VOLTAGE (V)
Eoss (mJ)
0
TJ, JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
2.0
TJ, JUNCTION TEMPERATURE (°C)
100
0.01
2.5
VGS = 10 V
ID = 9.5 A
500
600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
150
NTPF165N65S3H
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
1
0.1
D = 0.5
Duty Cycle −Descending Order
D = 0.2
D = 0.1
D = 0.05
D = 0.02
P DM
t1
D = 0.01
t2
0.01
ZqJC(t) = r(t) x RqJC
RqJC = 3.69°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1/t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
1
10
NTPF165N65S3H
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
NTPF165N65S3H
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
NTPF165N65S3H
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
Y
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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