NTR2101PT1G

NTR2101P MOSFET – Single P-Channel, Small Signal, SOT-23 -8.0 V, -3.7 A www.onsemi.com Features • • • • V(BR)DSS Leading Trench Technology for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb−Free Device RDS(on) Typ 39 mW @ −4.5 V −8.0 V 79 mW @ −1.8 V P−Channel D • High Side Load Switch • DC−DC Conversion • Cell Phone, Notebook, PDAs, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) G Symbol Value Unit Drain−to−Source Voltage VDSS −8.0 V Gate−to−Source Voltage VGS ±8.0 V ID −3.7 A Continuous Drain Current (Note 1) t≤5s Power Dissipation (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C S 3 −3.0 t≤5s PD 0.96 W tp = 10 ms IDM −11 A MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 2 Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −1.2 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Symbol Max Unit Junction−to−Ambient – Steady State RqJA 160 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 130 THERMAL RESISTANCE RATINGS Parameter −3.7 A 52 mW @ −2.5 V Applications Parameter ID Max Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). SOT−23 CASE 318 STYLE 21 TR7 MG G 1 Gate 2 Source TR7 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NTR2101PT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 June, 2019 − Rev. 7 1 Publication Order Number: NTR2101P/D NTR2101P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 10 VGS = 0 V, VDS = −6.4 V mV/°C TJ = 25°C −1.0 TJ = 125°C −100 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA ±100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS −0.40 −1.0 2.7 VGS = −4.5 V, ID = −3.5 A 39 V mV/°C 52 mW VGS = −2.5 V, ID = −3.0 A 52 72 VGS = −1.8 V, ID = −2.0 A 79 120 VGS = −5.0 V, ID = −3.5 A 9.0 S 1173 pF CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge CISS COSS CRSS VGS = 0 V, f = 1.0 MHz, VDS = −4.0 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 289 218 15 nC 7.4 15 ns 15.75 25 38 58 31 51 −0.73 −1.2 12 VGS = −4.5 V, VDS = −4.0 V, ID = −3.5 A 3.8 2.5 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = −4.5 V, VDD = −4.0 V, ID = −1.2 A, RG = 6.0 W tf DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −1.2 A TJ = 25°C V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR2101P TYPICAL CHARACTERISTICS 10 VGS = −2.6 V to −6.0 V −ID, DRAIN CURRENT (A) VGS = −2.4 V 8 −ID, DRAIN CURRENT (A) 10 TJ = 25°C VGS = −2.0 V VGS = −2.2 V 6 VGS = −1.8 V 4 2 VGS = −1.4 V VDS ≥ −10 V 8 TJ = 150°C 6 TJ = 25°C 4 TJ = −55°C 2 VGS = −1.2 V 0 0 1 2 3 4 0 5 0.15 0.1 0.05 0 1 2 3 4 5 6 0.08 VGS = −4.5 V 0.06 TJ = 150°C TJ = 25°C 0.04 TJ = −55°C 0.02 0 2 3 4 5 6 7 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.7 8 100000 ID = −3.7 A VGS = −4.5 V VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 Figure 2. Transfer Characteristics 0.2 1.5 3 Figure 1. On−Region Characteristics ID = −3.7 A TJ = 25°C 1.6 2 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.25 0 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.4 TJ = 150°C 10000 1.3 1.2 1.1 1.0 1000 TJ = 100°C 0.9 0.8 −50 100 −25 0 25 50 75 100 125 150 0 2 4 6 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 3 8 NTR2101P VDS = 0 VGS = 0 TJ = 25°C C, CAPACITANCE (pF) 2000 1500 CISS CRSS 1000 500 COSS 0 −4 −2 0 −VGS −VDS 2 4 6 8 5 4 VGS 3 QGS 2 QDS 2 TJ = 25°C ID = −3.5 A 1 0 0 2 4 6 8 10 12 1 0 14 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 6 100 −IS, SOURCE CURRENT (A) VDD = −4.0 V ID = −1.0 A VGS = −4.5 V tf td(off) tr 10 td(on) 1 10 4 3 2 1 0 100 VGS = 0 V TJ = 25°C 5 0.3 0.45 0.6 Figure 9. Resistive Switching Time Variation versus Gate Resistance 10 100 ms 1 ms 10 ms 1 0.01 0.1 0.9 1.05 Figure 10. Diode Forward Voltage versus Current 100 0.1 0.75 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) −ID, DRAIN CURRENT (A) t, TIME (ns) 4 VDS 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 5 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2500 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0 V < VGS < 8 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 100 ms dc 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.2 NTR2101P TYPICAL CHARACTERISTICS 1000 r(t) (°C/W) 100 10 D = 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 12. Thermal Response www.onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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