NTS4172NT1G

NTS4172N Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70 Features • • • • Low On−Resistance Low Gate Threshold Voltage Halide Free This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 93 mW @ 10 V 30 V 100 mW @ 4.5 V 140 mW @ 2.5 V ID MAX 1.7 A 1.5 A 1.0 A Applications • Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits) • Optimized for Battery and Load Management Applications in MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD 0.350 3.4 −55 to 150 0.25 260 ID Symbol VDSS VGS Value 30 ±12 1.6 1.13 1.70 0.294 Portable Equipment like Cell Phones, PDA’s, Media Players, etc. SC−70/SOT−323 (3 LEADS) D Unit V V G A S 3 W 1 A °C A °C 2 SC−70/SOT−323 CASE 419 STYLE 8 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain TFMG G 1 Gate 2 Source Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TF = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t ≤ 5 s (Note 1) Symbol RqJA RqJA Max 425 360 Unit °C/W ORDERING INFORMATION Device NTS4172NT1G Package SC−70 (Pb−Free) Shipping† 3000/Tape & Reel 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. * Date code orientation may vary depending upon manufacturing location © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 0 1 Publication Order Number: NTS4172N/D NTS4172N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(TH) VGS(TH) /TJ RDS(on) VGS = 10 V, ID = 1.7 A VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.0 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = 1.0 A VGS = 4.5 V, VDD = 15 V, ID = 1.7 A, RG = 3 W VGS = 4.5 V, VDS = 15 V, ID = 1.7 A VGS = 0 V, f = 1.0 MHz, VDS = 15 V VDS = 5.0 V, ID = 1.7 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 7.5 4.4 16.1 2.2 ns 381 39.6 32.6 4.38 0.40 0.62 1.33 4.5 W nC pF VGS = VDS, ID = 250 mA 0.6 1.0 3.1 58 64 79 4.2 93 100 140 S 1.4 V mV/°C mW V(BR)DSS V(BR)DSS /TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Reference to 25°C VGS = 0 V, VDS = 24 V, TJ = 25°C VGS = 0 V, VDS = 24 V, TJ = 125°C VDS = 0 V, VGS = "12 V 30 8.4 1.0 5.0 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Units DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 0.76 7.9 5.0 2.9 2.0 nC 1.0 V ns 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTS4172N TYPICAL CHARACTERISTICS 2.5 2.0 1.5 1.0 0.5 0 2.0 V 10 V 2.5 V 3.5 4.5 V TJ = 25°C 1.8 V ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 TJ = 125°C TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (A) 1.7 V 1.6 V 1.5 V VGS = 1.4 V 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = −55°C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.12 0.10 0.08 0.06 0.04 0.02 ID = 1.7 A TJ = 25°C 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.5 Figure 2. Transfer Characteristics TJ = 25°C VGS = 2.5 V VGS = 4.5 V VGS = 10 V 1 2 3 4 5 6 7 8 9 10 1.0 1.5 2.0 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 −50 10 ID = 1.7 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 100 TJ = 125°C −25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTS4172N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 Crss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Coss VGS = 0 V TJ = 25°C Ciss 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 ID = 1.7 A TJ = 25°C 4.0 5.0 Qgs Qgd QT QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 1.5 IS, SOURCE CURRENT (A) VDD = 15 V ID = 1.7 A VGS = 4.5 V td(off) tf 10 tr td(on) Figure 8. Gate−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 1.0 t, TIME (ns) 100 0.5 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTS4172N PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M e1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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