NTS4001NT1G

NTS4001N, NVS4001N MOSFET – Single, N-Channel, Small Signal, SC-70 30 V, 270 mA http://onsemi.com Features • • • • • V(BR)DSS Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVS4001N These Devices are Pb−Free and are RoHS Compliant RDS(on) TYP ID Max 1.0 W @ 4.0 V 30 V 270 mA 1.5 W @ 2.5 V SC−70/SOT−323 (3 LEADS) Applications • • • • Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts Gate 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Source Symbol Value Units Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 270 mA Continuous Drain Current (Note 1) Steady State TA = 25 °C Power Dissipation (Note 1) Steady State TA = 25 °C PD 330 t =10 ms IDM 800 mA TJ, TSTG −55 to 150 °C Pulsed Drain Current TA = 85 °C Operating Junction and Storage Temperature 1 Drain 2 (Top View) MARKING DIAGRAM & PIN ASSIGNMENT 3 200 D mW Source Current (Body Diode) IS 270 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 1 3 2 TD M G G SC−70 / SOT−323 CASE 419 STYLE 8 TD M G 2 1 G S = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NTS4001NT1G SC−70 (Pb−Free) 3000 / Tape & Reel NVS4001NT1G SC−70 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 June, 2019 − Rev. 5 1 Publication Order Number: NTS4001N/D NTS4001N, NVS4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 60 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±1.0 mA VGS(TH) VGS = VDS, ID = 100 mA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.8 1.2 −3.4 mV/ °C VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.0 VDS = 3.0 V, ID = 10 mA 80 W mS CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 20 33 19 32 7.25 12 0.9 1.3 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.2 td(ON) 17 tr 23 VGS = 5.0 V, VDS = 24 V, ID = 0.1 A pF nC 0.2 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA, RG = 50 W tf ns 94 82 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.43 VGS = 0 V, dIS/dt = 8.0 A/ms, IS = 10 mA 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 5.0 0.7 V ns NTS4001N, NVS4001N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 3 V 0.16 2.5 V 0.14 2.25 V 0.12 0.1 0.08 2V 0.06 0.04 1.75 V 1.5 V 0.02 1.25 0.4 0.8 1.2 1.6 VDS = 5 V ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 TJ = 25°C 0.08 0.06 TJ = 125°C 0.04 25°C 0.02 TJ = −55°C 0 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.2 1.4 1.6 2 1.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 125°C 1.0 0.75 TJ = 25°C 0.5 TJ = −55°C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 1 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.2 0.18 1.25 VGS = 4.5 V 0.75 1.6 VGS = 10 V 0.5 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 10000 ID = 0.01 A VGS = 10 V VGS = 0 V 1.4 1000 1.2 1 0.8 0.6 TJ = 150°C 100 0.4 TJ = 125°C 0.2 0 −50 0.205 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 TJ = 25°C 1.0 Figure 3. On−Resistance vs. Drain Current and Temperature 2 2.2 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTS4001N, NVS4001N C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss TJ = 25°C VGS = 0 V 20 Ciss Coss 10 0 10 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) Crss 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS 2 1 0 ID = 0.1 A TJ = 25°C 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) 0.08 0.4 0.8 0.2 0.6 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation 0.1 QGD VGS = 0 V TJ = 25°C 0.06 0.04 0.02 0 0.5 0.55 0.65 0.6 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 0.75 1 NTS4001N, NVS4001N PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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