NVS4001NT1G

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTS4001N, NVS4001N MOSFET – Single, N-Channel, Small Signal, SC-70 30 V, 270 mA http://onsemi.com Features • • • • • V(BR)DSS Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC−Q101 Qualified and PPAP Capable − NVS4001N These Devices are Pb−Free and are RoHS Compliant RDS(on) TYP ID Max 1.0 W @ 4.0 V 30 V 270 mA 1.5 W @ 2.5 V SC−70/SOT−323 (3 LEADS) Applications • • • • Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts Gate 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Source Symbol Value Units Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 270 mA Continuous Drain Current (Note 1) Steady State TA = 25 °C Power Dissipation (Note 1) Steady State TA = 25 °C PD 330 t =10 ms IDM 800 mA TJ, TSTG −55 to 150 °C Pulsed Drain Current TA = 85 °C Operating Junction and Storage Temperature 1 Drain 2 (Top View) MARKING DIAGRAM & PIN ASSIGNMENT 3 200 D mW Source Current (Body Diode) IS 270 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 1 3 2 TD M G G SC−70 / SOT−323 CASE 419 STYLE 8 TD M G 2 1 G S = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NTS4001NT1G SC−70 (Pb−Free) 3000 / Tape & Reel NVS4001NT1G SC−70 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 June, 2019 − Rev. 5 1 Publication Order Number: NTS4001N/D NTS4001N, NVS4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 60 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±1.0 mA VGS(TH) VGS = VDS, ID = 100 mA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.8 1.2 −3.4 mV/ °C VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.0 VDS = 3.0 V, ID = 10 mA 80 W mS CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 20 33 19 32 7.25 12 0.9 1.3 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.2 td(ON) 17 tr 23 VGS = 5.0 V, VDS = 24 V, ID = 0.1 A pF nC 0.2 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA, RG = 50 W tf ns 94 82 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.43 VGS = 0 V, dIS/dt = 8.0 A/ms, IS = 10 mA 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 5.0 0.7 V ns NTS4001N, NVS4001N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 3 V 0.16 2.5 V 0.14 2.25 V 0.12 0.1 0.08 2V 0.06 0.04 1.75 V 1.5 V 0.02 1.25 0.4 0.8 1.2 1.6 VDS = 5 V ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 TJ = 25°C 0.08 0.06 TJ = 125°C 0.04 25°C 0.02 TJ = −55°C 0 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.2 1.4 1.6 2 1.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 125°C 1.0 0.75 TJ = 25°C 0.5 TJ = −55°C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 1 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.2 0.18 1.25 VGS = 4.5 V 0.75 1.6 VGS = 10 V 0.5 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 10000 ID = 0.01 A VGS = 10 V VGS = 0 V 1.4 1000 1.2 1 0.8 0.6 TJ = 150°C 100 0.4 TJ = 125°C 0.2 0 −50 0.205 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 TJ = 25°C 1.0 Figure 3. On−Resistance vs. Drain Current and Temperature 2 2.2 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTS4001N, NVS4001N C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss TJ = 25°C VGS = 0 V 20 Ciss Coss 10 0 10 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) Crss 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS 2 1 0 ID = 0.1 A TJ = 25°C 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) 0.08 0.4 0.8 0.2 0.6 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation 0.1 QGD VGS = 0 V TJ = 25°C 0.06 0.04 0.02 0 0.5 0.55 0.65 0.6 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 0.75 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N DATE 11 NOV 2008 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 0.016 0.010 0.087 0.053 0.055 0.022 0.095 XX MG G SOLDERING FOOTPRINT* 0.65 0.025 1 XX M G 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.9 0.035 SCALE 10:1 0.008 0.079 MAX 0.040 0.004 GENERIC MARKING DIAGRAM L 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 c A2 A1 0.65 0.025 MIN 0.032 0.000 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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