NTTFS5C454NLTAG

NTTFS5C454NL MOSFET – Power, Single, N-Channel 40 V, 3.8 mW, 85 A Features • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 3.8 mW @ 10 V 40 V 85 A 6 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 85 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) 60 Steady State ID W 55 N−CHANNEL MOSFET A 20 PD 1.6 1 520 A TJ, Tstg −55 to +175 °C IS 61 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) EAS 202 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM W 3.2 IDM Operating Junction and Storage Temperature S (1,2,3) 14 TA = 100°C TA = 25°C, tp = 10 ms G (4) 27 TA = 100°C TA = 25°C D (5) Symbol Value Unit Junction−to−Case − Steady State RqJC 2.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 47 WDFN8 (m8FL) CASE 511AB 454L A Y WW G 1 S S S G 454L AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 4 1 Publication Order Number: NTTFS5C454NL/D NTTFS5C454NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 22 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 50 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS Gate Resistance 1.2 1.7 2.0 −5.1 VGS = 10 V ID = 20 A 3.2 3.8 VGS = 4.5 V ID = 20 A 4.8 6 VDS = 15 V, ID = 40 A V mV/°C mW 80 S RG 1.4 W Input Capacitance CISS 1600 Output Capacitance COSS Reverse Transfer Capacitance CRSS Output Charge QOSS VGS = 0 V, VDD = 20 V 21 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 40 A 18 Total Gate Charge QG(TOT) 8.2 Threshold Gate Charge QG(TH) 2 Gate−to−Source Charge QGS 3.8 Gate−to−Drain Charge QGD 2.1 Plateau Voltage VGP 3.2 td(ON) 9.3 CHARGES AND CAPACITANCES VGS = 0 V, f = 1 MHz, VDS = 25 V 590 pF 21 VGS = 4.5 V, VDS = 20 V; ID = 40 A nC nC V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 40 A, RG = 2.5 W tf 100 ns 17 4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.86 TJ = 125°C 0.75 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A 1.2 V 29 VGS = 0 V, dIS/dt = 100 A/ms, IS = 40 A QRR 14 ns 15 20 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFS5C454NL TYPICAL CHARACTERISTICS 80 80 10 V to 3.6 V ID, DRAIN CURRENT (A) 3.2 V 60 50 40 2.8 V 30 20 60 50 40 30 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = 125°C 0 1 TJ = −55°C 2 3 5 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 20 TJ = 25°C ID = 20 A 18 16 14 12 10 8 6 4 2 2 TJ = 25°C 20 10 0 VDS = 10 V 70 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 70 3 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 TJ = 25°C 7 6 VGS = 4.5 V 5 4 VGS = 10 V 3 2 0 10 20 30 Figure 3. On−Resistance vs. Gate−to−Source Voltage IDSS, LEAKAGE (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.E+05 25 50 75 100 125 150 50 60 70 80 90 100 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.9 VGS = 10 V ID = 20 A 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 40 ID, DRAIN CURRENT (A) 175 TJ = 175°C 1.E+04 TJ = 125°C 1.E+03 TJ = 85°C 1.E+02 1.E+01 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTTFS5C454NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10000 CISS 1000 COSS 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 CRSS 10 15 20 25 30 35 40 8 7 6 5 QGD QGS 4 3 VDS = 20 V ID = 40 A TJ = 25°C 2 1 0 0 2 4 6 8 10 12 14 18 16 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 100 IS, SOURCE CURRENT (A) VGS = 0 V tr 100 t, TIME (ns) QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 td(off) tf 10 1 10 td(on) VGS = 4.5 V VDD = 20 V ID = 40 A 1 10 10 1 0.1 0.01 0.001 100 TJ = 25°C TJ = −55°C TJ = 125°C 0.2 0 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 500 ms 100 10 ms 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 IPEAK, (A) ID, DRAIN CURRENT (A) 1 ms TJ (initial) = 100°C RDS(on) Limit Thermal Limit Package Limit 0.1 TJ (initial) = 25°C 10 1 1 10 100 1E−4 1E−3 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−2 NTTFS5C454NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle RqJA (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping† NTTFS5C454NLTAG 454L WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS5C454NLTWG 454L WDFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative