NUD3105DMT1

NUD3105D Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features http://onsemi.com • Provides a Robust Driver Interface Between D.C. Relay Coil and • • • • • • Relay, Inductive Load Driver Silicon SMALLBLOCK] 0.5 Ampere, 8.0 V Clamp MARKING DIAGRAM 3 Sensitive Logic Circuits Optimized to Switch Relays from 3.0 V to 5.0 V Rail Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(ON) Reduces System Current Drain Pb−Free Package is Available 6 5 4 1 2 SC−74 CASE 318F STYLE 7 JW4 D G JW4 D G G Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, • Industrial: Small Appliances, Security Systems, Automated Test • Cassette Recorders Equipment, Garage Door Openers Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD3105DMT1 NUD3105DMT1G Package SC−74 SC−74 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel INTERNAL CIRCUIT DIAGRAMS Drain (6) Drain (3) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Gate (2) 1.0 k 300 k 1.0 k 300 k Gate (5) Source (1) Source (4) CASE 318F © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NUD3105D/D NUD3105D MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol VDSS VGS ID Ez Drain to Source Voltage − Continuous Gate to Source Voltage – Continuous Drain Current – Continuous Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) Junction Temperature Operating Ambient Temperature Storage Temperature Range Total Power Dissipation (Note 1) Derating Above 25°C Thermal Resistance Junction−to−Ambient Rating Value 6.0 6.0 500 50 150 −40 to 85 −65 to +150 380 1.5 329 Unit Vdc Vdc mA mJ °C °C °C mW mW/°C °C/W TJ TA Tstg PD RqJA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol OFF CHARACTERISTICS VBRDSS BVGSO IDSS Drain to Source Sustaining Voltage (Internally Clamped) (ID = 10 mA) Ig = 1.0 mA Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ = 85°C) (ID = 500 mA, VGS = 5.0 V, TJ = 85°C) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) 6.0 − − − 5.0 − 8.0 − − − − − 9.0 8.0 15 15 35 65 V V mA Characteristic Min Typ Max Unit IGSS mA ON CHARACTERISTICS VGS(th) 0.8 0.8 − − − − − 1.2 − − − − − − 1.4 1.4 1.2 1.3 0.9 1.3 0.9 V RDS(on) W IDS(on) 300 200 350 400 − 570 − − − mA mMhos gFS http://onsemi.com 2 NUD3105D TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance (VDS = 5.0 V,VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − − − 25 37 8.0 − − − pF pF pF Characteristic Min Typ Max Unit SWITCHING CHARACTERISTICS Symbol tPHL tPLH tPHL tPLH tf tr tf tr Characteristic Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V) Low to High Propagation Delay; Figure 1 (5.0 V) High to Low Propagation Delay; Figure 1 (3.0 V) Low to High Propagation Delay; Figure 1 (3.0 V) Transition Times: Fall Time; Figure 1 (5.0 V) Rise Time; Figure 1 (5.0 V) Fall Time; Figure 1 (3.0 V) Rise Time; Figure 1 (3.0 V) Min − − − − − − − − Typ 25 80 44 44 23 32 53 30 Max − − − − nS − − − − Units nS − VCC Vin 50% tPLH 90% 50% 10% tr tf tPHL GND VZ VCC GND Vout Figure 1. Switching Waveforms http://onsemi.com 3 NUD3105D TYPICAL CHARACTERISTICS 10 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25°C 1.0 0.1 0.01 0.001 VGS = 5.0 V VGS = 3.0 V VGS = 2.0 V 1.0 0.1 0.01 0.001 0.0001 VDS = 0.8 V 85°C 50°C 25°C −40°C 0.0001 0.00001 0.00001 VGS = 1.0 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.000001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Output Characteristics 1200 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) 1000 800 600 400 200 0 −50 ID = 0.5 A VGS = 5.0 V ID = 0.25 A VGS = 3.0 V 50 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) ID = 0.5 A VGS = 3.0 V 45 40 35 30 25 20 15 0.8 1.0 Figure 3. Transfer Function ID = 250 mA −40°C 125°C 85°C 50°C 25°C 1.2 1.4 1.6 1.8 2.0 −25 0 25 50 75 100 125 TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 4. On Resistance Variation vs. Temperature 8.20 VZ, ZENER CLAMP VOLTAGE (V) 8.18 VZ, ZENER VOLTAGE (V) 8.16 8.14 8.12 8.10 8.08 8.06 8.04 8.02 8.00 −50 −25 0 25 50 75 100 IZ = 10 mA 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 0.1 Figure 5. RDS(ON) Variation with Gate−To−Source Voltage VGS = 0 V −40°C 25°C 85°C 1.0 10 100 1000 125 TEMPERATURE (°C) IZ, ZENER CURRENT (mA) Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener Current http://onsemi.com 4 NUD3105D TYPICAL CHARACTERISTICS 1.2 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.05 0.1 0.15 85°C 50°C 25°C −40°C 0.2 0.25 0.3 0.35 0.4 0.45 0.5 125°C 40 35 IGSS, GATE LEAKAGE (mA) 30 25 20 15 10 5 0 −50 −25 0 25 50 75 100 125 VGS = 3.0 V VGS = 5.0 V ID, DRAIN CURRENT (A) TEMPERATURE (°C) Figure 8. On−Resistance vs. Drain Current and Temperature 1.0 Figure 9. Gate Leakage vs. Temperature VGS = 3.0 V, TC = 25°C ID−Continuous = 0.5 A ID, DRAIN CURRENT (A) RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT DC PW = 0.1 s DC = 50% PW = 10 ms DC = 20% PW = 7.0 ms DC = 5% Typical IZ vs. VZ 1.0 10 100 0.1 V(BR)DSS min = 6.0 V 0.01 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 10. Safe Operating Area for NUD3105DLT1 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pd(pk) 0.01 SINGLE PULSE PW t1 t2 PERIOD DUTY CYCLE = t1/t2 0.001 0.01 0.1 1.0 10 100 t1, PULSE WIDTH (ms) 1000 10,000 100,000 1,000,000 Figure 11. Transient Thermal Response for NUD3105DLT1 http://onsemi.com 5 NUD3105D Designing with this Data Sheet 1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the NUD3105D will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 11 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 and 11 with the SOA notes to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. 4. Verify that the circuit driving the gate will meet the VGS(th) from the Electrical Characteristics table. 5. Using the max output current calculated in step 1, check Figure 7 to insure that the range of Zener clamp voltage over temperature will satisfy all system & EMI requirements. 6. Use IGSS and IDSS from the Electrical Characteristics table to insure that “OFF” state leakage over temperature and voltage extremes does not violate any system requirements. 7. Review circuit operation and insure none of the device max ratings are being exceeded. APPLICATIONS DIAGRAMS +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + Vout (6) NUD3105DDMT1 Vout (3) Vin (2) Vin (5) GND (1) GND (4) Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V Level Translating Interface http://onsemi.com 6 NUD3105D Max Continuous Current Calculation for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C Assuming ±10% Make Tolerance, R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C TC for Annealed Copper Wire is 0.4%/°C R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc + AROMAT TX2−5V − Vout (3) NUD3105DLT1 − AROMAT JS1E−5V + +4.5 TO +5.5 Vdc + AROMAT JS1E−5V − Vout (3) NUD3105DLT1 + AROMAT JS1E−5V − − AROMAT JS1E−5V + Vin (1) GND (2) Vin (1) GND (2) Figure 13. A 140 mW, 5.0 V Relay with TTL Interface Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank http://onsemi.com 7 NUD3105D PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L D HE 6 1 5 2 4 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° b e q 0.05 (0.002) A1 A L C STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 1.0 0.039 0.95 0.037 0.95 0.037 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SMALLBLOCK is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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