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NUP2105LT3

NUP2105LT3

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    NUP2105LT3 - Dual Line CAN Bus Protector - ON Semiconductor

  • 数据手册
  • 价格&库存
NUP2105LT3 数据手册
NUP2105L Dual Line CAN Bus Protector The NUP2105L has been designed to protect the CAN transceiver in high−speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features http://onsemi.com • • • • • • • • 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed CAN Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 9.5 A (1 x 50 ms) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5 x 50 ns) Flammability Rating UL 94 V−0 Pb−Free Packages are Available SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER PIN 1 PIN 3 PIN 2 CAN_H CAN Transceiver CAN_L CAN Bus NUP2105L Applications ♦ ♦ • Industrial Control Networks • Smart Distribution Systems (SDS™) DeviceNet™ Automotive Networks ♦ Low and High−Speed CAN ♦ Fault Tolerant CAN MARKING DIAGRAM 27EMG G 1 SOT−23 CASE 318 STYLE 27 27E = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUP2105LT1 NUP2105LT1G NUP2105LT3 NUP2105LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 4 Publication Order Number: NUP2105L/D NUP2105L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK TJ TJ TL ESD Rating Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature (10 s) Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) Value 350 −55 to 150 −55 to 150 260 16 400 30 °C °C °C kV V kV Unit W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM VBR IR VC VC IPP CJ Parameter Reverse Working Voltage Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Maximum Peak Pulse Current Capacitance (Note 2) IT = 1 mA (Note 3) VRWM = 24 V IPP = 5 A (8 x 20 ms Waveform) (Note 4) IPP = 8 A (8 x 20 ms Waveform) (Note 4) 8 x 20 ms Waveform (Note 4) VR = 0 V, f = 1 MHz (Line to GND) Test Conditions Min 24 26.2 15 32 100 40 44 8.0 30 Typ Max Unit V V nA V V A pF 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. http://onsemi.com 2 NUP2105L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 110 % OF PEAK PULSE CURRENT 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 t, TIME (ms) 20 25 30 0.0 25 30 35 40 45 50 td = IPP/2 c−t WAVEFORM PARAMETERS tr = 8 ms td = 20 ms IPP, PEAK PULSE CURRENT (A) 12.0 10.0 8.0 6.0 4.0 2.0 PULSE WAVEFORM 8 x 20 ms per Figure 1 VC, CLAMPING VOLTAGE (V) Figure 1. Pulse Waveform, 8 × 20 ms 35 f = 1.0 MHz, Line to Ground C, CAPACITANCE (pF) 30 125°C IT, (mA) 25°C Figure 2. Clamping Voltage vs Peak Pulse Current 50 45 40 35 30 25 20 15 25°C 65°C 25 20 −40°C 15 10 10 5 0 0 2 4 6 8 10 20 22 −55°C TA = +150°C 28 30 32 34 24 26 VR, REVERSE VOLTAGE (V) VBR, VOLTAGE (V) Figure 3. Typical Junction Capacitance vs Reverse Voltage 25 VR, REVERSE BIAS VOLTAGE (V) +25°C +65°C −55°C Figure 4. VBR versus IT Characteristics of the NUP2105L 120 100 PERCENT DERATING (%) 20 TA = +150°C 80 60 40 20 0 −60 15 10 5 0 0 2 4 6 8 IL, LEAKAGE CURRENT (nA) 10 12 −30 0 30 60 90 TEMPERATURE (°C) 120 150 180 Figure 5. IR versus Temperature Characteristics of the NUP2105L Figure 6. Temperature Power Dissipation Derating of the NUP2501L http://onsemi.com 3 NUP2105L APPLICATIONS Background The Controller Area Network (CAN) is a serial communication protocol designed for providing reliable high speed data transmission in harsh environments. TVS diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of CAN transceivers can be easily increased by adding external TVS diodes to prevent transient voltage failures. The NUP2105L provides a transient voltage suppression solution for CAN data communication lines. The NUP2105L is a dual bidirectional TVS device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. The NUP2105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed CAN networks. CAN Physical Layer Requirements Table 1 provides a summary of the system requirements for a CAN transceiver. The ISO 11898−2 physical layer specification forms the baseline for most CAN systems. The transceiver requirements for the Honeywell® Smart Distribution Systems (SDS®) and Rockwell (Allen−Bradley) DeviceNet™ high speed CAN networks are similar to ISO 11898−2. The SDS and DeviceNet transceiver requirements are similar to ISO 11898−2; however, they include minor modifications required in an industrial environment. Table 1. Transceiver Requirements for High−Speed CAN Networks Parameter Min / Max Bus Voltage (12 V System) Common Mode Bus Voltage ISO 11898−2 −3.0 V / 16 V CAN_L: −2.0 V (min) 2.5 V (nom) CAN_H: 2.5 V (nom) 7.0 V (max) Transmission Speed ESD EMI Immunity Popular Applications 1.0 Mb/s @ 40 m 125 kb/s @ 500 m Not specified, recommended w $8.0 kV (contact) ISO 7637−3, pulses ‘a’ and ‘b’ Automotive, Truck, Medical and Marine Systems Same as ISO 11898−2 Not specified, recommended w $8.0 kV (contact) IEC 61000−4−4 EFT Industrial Control Systems 500 kb/s @ 100 m 125 kb/s @ 500 m Not specified, recommended w $8.0 kV (contact) Same as ISO 11898−2 Industrial Control Systems Same as ISO 11898−2 Same as ISO 11898−2 SDS Physical Layer Specification 2.0 11 V / 25 V DeviceNet Same as ISO 11898−2 http://onsemi.com 4 NUP2105L EMI Specifications The EMI protection level provided by the TVS device can be measured using the International Organization for Standardization (ISO) 7637−1 and −3 specifications that are representative of various noise sources. The ISO 7637−1 specification is used to define the susceptibility to coupled transient noise on a 12 V power supply, while ISO 7637−3 defines the noise immunity tests for data lines. The ISO 7637 tests also verify the robustness and reliability of a design by applying the surge voltage for extended durations. The IEC 61000−4−X specifications can also be used to quantify the EMI immunity level of a CAN system. The IEC Table 2. ISO 7637 and IEC 61000−4−X Test Specifications Test Waveform Test Specifications Vs = 0 to −100 V Imax = 10 A Pulse 1 tduration = 5000 pulses 61000−4 and ISO 7637 tests are similar; however, the IEC standard was created as a generic test for any electronic system, while the ISO 7637 standard was designed for vehicular applications. The IEC61000−4−4 Electrical Fast Transient (EFT) specification is similar to the ISO 7637−1 pulse 1 and 2 tests and is a requirement of SDS CAN systems. The IEC 61000−4−5 test is used to define the power absorption capacity of a TVS device and long duration voltage transients such as lightning. Table 2 provides a summary of the ISO 7637 and IEC 61000−4−X test specifications. Table 3 provides the NUP2105L’s ESD test results. NUP2105L Test Imax = 1.75 A Vclamp_max = 31 V tduration = 5000 pulses Ri = 10 W, tr = 1.0 ms, td_10% = 2000 ms, t1 = 2.5 s, t2 = 200 ms, t3 = 100 ms Imax = 9.5 A Vclamp_max = 33 V tduration = 5000 pulses Ri = 10 W, tr = 1.0 ms, td_10% = 50 ms, t1 = 2.5 s, t2 = 200 ms Imax = 50 A Vclamp_max = 40 V tduration = 60 minutes Ri = 50 W, tr = 5.0 ns, td_10% = 0.1 ms, t1 = 100 ms, t2 = 10 ms, t3 = 90 ms Simulated Noise Source DUT in parallel with inductive load that is disconnected from power supply. ISO 7637−1 12 V Power Supply Lines Pulse 2 Vs = 0 to +100 V Imax = 10 A tduration = 5000 pulses DUT in series with inductor that is disconnected. Pulse ‘a’ ISO 7637−3 Data Line EFT Pulse ‘b’ Vs = −60 V Imax = 1.2 A tduration = 10 minutes Vs = +40 V Imax = 0.8 A tduration = 10 minutes Vopen circuit = 2.0 kV Ishort circuit = 40 A (Level 4 = Severe Industrial Environment) Ri = 50 W, tr < 5.0 ns, td_50% = 50 ns, tburst = 15 ms, fburst = 2.0 to 5.0 kHz, trepeat = 300 ms tduration = 1 minute Vopen circuit = 1.2 x 50 ms, Ishort circuit = 8 x 20 ms Ri = 50 W Switching noise of inductive loads. (Note 2) Switching noise of inductive loads. IEC 61000−4−4 Data Line EFT IEC 61000−4−5 Lightning, nonrepetitive power line and load switching 1. DUT = device under test. 2. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of ISO 7637−3. Table 3. NUP2105L ESD Test Results ESD Specification Human Body Model IEC 61000−4−2 Contact Contact Non−contact (Air Discharge) Test 16 kV 30 kV (Note 3) 30 kV (Note 3) Test Level Pass Pass Pass Pass / Fail 3. Test equipment maximum test voltage is 30 kV. http://onsemi.com 5 NUP2105L TVS Diode Protection Circuit TVS diodes provide protection to a transceiver by clamping a surge voltage to a safe level. TVS diodes have high impedance below and low impedance above their breakdown voltage. A TVS Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 7 provides an example of a dual bidirectional TVS diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener TVS diodes. The clamping voltage of the composite device is equal to the breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. CAN_H CAN Transceiver CAN_L CAN Bus NUP2105L Figure 7. High−Speed and Fault Tolerant CAN TVS Protection Circuit http://onsemi.com 6 NUP2105L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 D 3 1 2 E HE e A b A1 L C DIM A A1 b c D E e L HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NUP2105L Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NUP2105L/D
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