NVMJS1D6N06CLTWG

NVMJS1D6N06CL MOSFET – Power, Single N-Channel 60 V, 1.36 mW, 250 A Features • • • • • • www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK8 Package, Industry Standard AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant V(BR)DSS Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 250 A Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD W 167 83 ID TA = 100°C TA = 25°C PD W 3.8 D D D D 1.9 A TJ, Tstg −55 to +175 °C IS 164 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A) EAS 451 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1D6N06 CL AWLYW LFPAK8 CASE 760AA 1 S S S G 1D6N06CL = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM 900 Source Current (Body Diode) G (4) A 38 IDM Operating Junction and Storage Temperature Range D (5,8) 27 TA = 100°C TA = 25°C, tp = 10 ms 250 A 2.30 mW @ 4.5 V 175 TC = 100°C Steady State Pulsed Drain Current TC = 25°C ID MAX 1.36 mW @ 10 V 60 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(ON) MAX Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 36 See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 July, 2019 − Rev. 1 1 Publication Order Number: NVMJS1D6N06CL/D NVMJS1D6N06CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 11 VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = ±16 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.2 VGS = 10 V ID = 50 A 1.13 1.36 VGS = 4.5 V ID = 50 A 1.65 2.30 gFS VDS =15 V, ID = 50 A V mV/°C mW 151 S pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 6660 Output Capacitance COSS 2953 Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz, VDS = 25 V 45 nC Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 50 A 41 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V; ID = 50 A 91 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 2.9 V td(ON) 19 ns 5 VGS = 4.5 V, VDS = 30 V; ID = 50 A 17.1 10.9 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 30 V, ID = 50 A, RG = 1 W tf 51 47 18 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.78 TJ = 125°C 0.66 tRR ta tb 78 VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A QRR 1.2 V ns 36 42 105 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMJS1D6N06CL TYPICAL CHARACTERISTICS 200 200 VGS = 10 V to 3.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 160 3.2 V 140 120 3.0 V 100 2.8 V 80 60 40 20 0 0 0.5 1.0 1.5 VDS ≤ 10 V 180 2.0 2.5 160 140 120 100 80 3.0 TJ = 25°C 60 40 20 0 TJ = 125°C TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 180 2.1 2.0 1.9 TJ = 25°C ID = 50 A 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE VOLTAGE (V) 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 4.0 TJ = 25°C VGS = 4.5 V VGS = 10 V 10 30 50 70 90 110 130 150 170 190 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 10 V ID = 40 A 1.7 100,000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1,000,000 1.9 1.5 1.3 1.1 0.9 0.7 −50 −25 0 25 50 75 100 125 150 175 TJ = 150°C TJ = 125°C 10,000 TJ = 85°C 1000 100 10 5 15 25 35 45 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 55 NVMJS1D6N06CL CISS 6000 5000 VGS = 0 V TJ = 25°C f = 1 MHz COSS 4000 3000 2000 1000 0 CRSS 0 10 20 30 40 50 25 20 6 15 4 QGD QGS 2 0 0 10 20 30 40 50 60 70 5 80 90 0 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(off) VGS = 4.5 V VDD = 30 V ID = 50 A 46 tf tr 100 td(on) 10 41 TJ = 125°C 36 31 26 21 TJ = 25°C 16 11 6 1 10 VDS = 30 V TJ = 25°C ID = 50 A VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 t, TIME (ns) 60 30 QT 8 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 7000 10 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1 100 TJ = −55°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TC = 25°C VGS ≤ 10 V 0.01 ms 0.1 ms TJ(initial) = 25°C IPEAK (A) IDS (A) 100 1 ms dc 10 ms 10 TJ(initial) = 100°C 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 1 100 1E−04 1E−03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NVMJS1D6N06CL TYPICAL CHARACTERISTICS R(t) (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 1 2% NVMJS1D6N06CL 650 mm2, 2 oz., Cu Single Layer Pad 1% 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NVMJS1D6N06CLTWG Marking Package Shipping† 1D6N06CL LFPAK8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK8 5x6 CASE 760AA ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: XXXXXX A WL Y W DATE 13 AUG 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. 98AON82475G LFPAK8 5x6 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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