NTMJS1D4N06CLTWG

MOSFET – Power, Single N-Channel 60 V, 1.3 mW, 262 A NTMJS1D4N06CL Features • • • • • www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK8 Package, Industry Standard These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1.3 mW @ 10 V 60 V 262 A 1.8 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS 20 V ID 262 A Parameter Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 25°C TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TA = 25°C PD TA = 25°C, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.7 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S (1,2,3) N−CHANNEL MOSFET A 39 28 PD TA = 100°C Operating Junction and Storage Temperature W 180 90 ID TA = 100°C TA = 25°C G (4) 185 TC = 100°C Steady State D (5,8) MARKING DIAGRAM W 4.0 D 2.0 IDM 900 A TJ, Tstg −55 to + 175 °C IS 150 A EAS 1376 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D D D 1D4N06 CL ALLYW LFPAK8 CASE 760AA 1 S S S G 1D4N06CL = Specific Device Code A = Assembly Location LL = Wafer Lot Y = Year W = Work Week THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.83 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 37.8 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2018 November, 2019 − Rev. 0 1 Publication Order Number: NTMJS1D4N06CL/D NTMJS1D4N06CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 25 VGS = 0 V, VDS = 60 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 280 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 5.3 VGS = 4.5 V ID = 50 A 1.45 1.8 VGS = 10 V ID = 50 A 1.07 1.3 gFS V mV/°C mW VDS =15 V, ID = 50 A 244 S VGS = 0 V, f = 1 MHz, VDS = 30 V 7430 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 3500 Reverse Transfer Capacitance CRSS 57 nC Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V; ID = 50 A 47 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 50 A 103 Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 48 V; ID = 50 A 10 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 11 Plateau Voltage VGP 2.6 V 29 ns 17 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDS = 48 V, ID = 50 A, RG = 2.5 W 21 td(OFF) 52 tf 19 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta VGS = 0 V, IS = 50 A TJ = 25°C 0.78 TJ = 125°C 0.66 VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A 86 1.2 V ns 58 tb 28 QRR 175 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMJS1D4N06CL VGS = 10 V to 3.6 V ID, DRAIN CURRENT (A) 3.2 V 2.8 V 2.6 V 2.4 V 1.0 0.5 2.0 1.5 2.5 3.0 3.5 4.0 4.5 5.0 VDS = 10 V TJ = 25°C TJ = 125°C 3.0 3.5 14 12 10 8 6 4 2 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.0 4.0 2.6 2.4 2.2 2.0 1.8 VGS = 4.5 V 1.6 1.4 VGS = 10 V 1.2 1.0 0.8 20 60 100 140 IDSS, LEAKAGE (nA) 1.7 1.5 1.3 1.1 75 100 125 150 300 TJ = 150°C 10K TJ = 125°C 1000 TJ = 85°C 100 TJ = 25°C 10 0.9 50 260 TJ = 175°C 100K 25 220 ID, DRAIN CURRENT (A) 1M 0 180 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 10 V ID = 50 A −25 4.5 5.0 TJ = 25°C 2.8 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C 2.5 Figure 2. Transfer Characteristics 16 0.7 −50 2.0 Figure 1. On−Region Characteristics 18 1.9 1.5 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 2.1 1.0 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 0 2.0 360 340 320 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 360 340 320 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 175 1 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NTMJS1D4N06CL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS C, CAPACITANCE (pF) COSS 1K 100 10 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 20 10 30 40 60 50 10 9 8 7 6 5 4 QGS VDS = 48 V ID = 50 A TJ = 25°C 2 1 0 0 40 60 50 70 80 90 100 Figure 8. Gate−to−Source Voltage vs. Total Charge tr tf td(on) 10 VGS = 4.5 V VDS = 48 V ID = 50 A 20 10 30 40 50 VGS = 0 V 100 IS, SOURCE CURRENT (A) 100 t, TIME (ns) 30 Figure 7. Capacitance Variation td(off) 10 1 0.1 60 TJ = 25°C 0.01 TJ = 125°C 0.001 0.1 0.2 TJ = −55°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 100 10 1 0.1 IPEAK (A) ID, DRAIN CURRENT (A) 20 QG, TOTAL GATE CHARGE (nC) 1000 0 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 QGD 3 10 ms Single Pulse TC = 25°C VGS ≤ 10 V 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 0.5 ms 1 ms 10 ms TJ(initial) = 25°C 10 100 1000 1 0.0001 TJ(initial) = 100°C 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTMJS1D4N06CL TYPICAL CHARACTERISTICS R(t) (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 2% 1 0.1 1% 0.01 0.001 0.0001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NTMJS1D4N06CLTWG Marking Package Shipping† 1D4N06CL LFPAK8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK8 5x6 CASE 760AA ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: XXXXXX A WL Y W DATE 13 AUG 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. 98AON82475G LFPAK8 5x6 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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