NTMJS0D9N04CL
MOSFET – Power, Single,
N-Channel
40 V, 0.82 mW, 330 A
Features
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
330
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
PD
ID
A
50
MARKING
DIAGRAM
PD
W
3.8
A
TJ, Tstg
−55 to
+175
°C
IS
169
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 29 A)
EAS
706
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
D
D D
D
1.9
900
Source Current (Body Diode)
S (1,2,3)
N−CHANNEL MOSFET
IDM
Operating Junction and Storage Temperature
Range
G (4)
35
TA = 100°C
TA = 25°C, tp = 10 ms
D (5,8)
W
167
83
TA = 100°C
TA = 25°C
330 A
1.2 mW @ 4.5 V
230
TC = 100°C
TA = 25°C
ID MAX
0.82 mW @ 10 V
40 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(ON) MAX
0D9N04
CL
AWLYW
LFPAK8
CASE 760AA
1
S
S
S
G
0D9N04CL = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
W
= Work Week
ORDERING INFORMATION
Symbol
Value
Unit
RqJC
0.9
°C/W
RqJA
36
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
June, 2019 − Rev. 0
1
Publication Order Number:
NTMJS0D9N04CL/D
NTMJS0D9N04CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
18
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 190 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.5
VGS = 10 V
ID = 50 A
0.65
0.82
VGS = 4.5 V
ID = 50 A
0.95
1.2
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
190
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
8862
VGS = 0 V, f = 1 MHz, VDS = 25 V
3328
pF
77
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
66
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
143
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.7
td(ON)
20
6.75
VGS = 4.5 V, VDS = 20 V; ID = 50 A
nC
21.4
22
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
tf
130
ns
66
177
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.73
TJ = 125°C
0.6
tRR
ta
tb
1.2
V
79.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
39
ns
40.5
126
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMJS0D9N04CL
TYPICAL CHARACTERISTICS
200
ID, DRAIN CURRENT (A)
140
120
2.8 V
100
80
60
40
140
120
100
80
TJ = 25°C
60
40
TJ = 125°C
20
0
0.5
1.0
1.5
2.0
0
3.0
2.5
0
1.0
1.5
TJ = −55°C
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0013
4.0
0.0012
0.0012
0.0011
TJ = 25°C
VGS = 4.5 V
0.0010
TJ = 25°C
ID = 50 A
0.0011
0.0009
0.0010
0.0008
0.0009
0.0007
0.0008
0.0006
VGS = 10 V
0.0006
0.0007
0.0005
3
4
5
6
7
8
9
VGS, GATE VOLTAGE (V)
10
0.0004
10
30
40
50
60
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1M
1.7
VGS = 10 V
ID = 40 A
TJ = 150°C
IDSS, LEAKAGE (nA)
100k
1.5
1.3
1.1
TJ = 125°C
10k
TJ = 85°C
1k
100
0.9
0.7
−50
20
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
160
3.0 V
160
20
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
180
10 V to 3.2 V
180
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMJS0D9N04CL
11k
CISS
C, CAPACITANCE (pF)
9k
8k
COSS
7k
VGS = 0 V
TJ = 25°C
f = 1 MHz
6k
5k
4k
3k
2k
CRSS
5
0
15
10
20
25
30
40
15
4
QGD
QGS
2
0
0
20
10
VDS = 20 V
TJ = 25°C
ID = 50 A
60
40
80
120
100
5
140
0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
tf
tr
46
td(on)
10
VGS = 4.5 V
VDD = 20 V
ID = 50 A
1
41
36
31
26
TJ = 125°C
21
16
11
TJ = 150°C
TJ = 25°C
6
10
1
100
0.3
0.4
0.5
0.6
0.7
TJ = −55°C
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
TC = 25°C
VGS ≤ 10 V
0.01 ms
0.1 ms
IDS (A)
100
10 ms
dc
10
100
TJ(initial) = 25°C
IPEAK (A)
1000
20
6
QG, TOTAL GATE CHARGE (nC)
100
1
25
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10,00
t, TIME (ns)
35
30
QT
IS, SOURCE CURRENT (A)
1k
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
10k
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1 ms
TJ(initial) = 100°C
10
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
1
10
1
100
1E−04
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NTMJS0D9N04CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA(t) (°C/W)
10
1
20%
10%
5%
2%
1%
NTMJS0D9N04CL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NTMJS0D9N04CLTWG
Marking
Package
Shipping†
0D9N04CL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AWLYW
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXX
A
WL
Y
W
DATE 13 AUG 2019
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
98AON82475G
LFPAK8 5x6
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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