RMPA2458

www.DataSheet4U.com September 2005 RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Features General Description ■ ■ ■ ■ ■ ■ ■ ■ ■ The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. 31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power out 3.3V collector supply operation 2.9V mirror supply operation Power saving shutdown options (bias control) Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package ■ Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11b/g applications Device Electrical Characteristics1 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Typ Max Units 2.5 GHz 3.3 3.6 V Mirror Supply Voltage 2.9 V Mirror Supply Current 3.3 mA Gain 31.5 dB Total Current @ 19dBm POUT 103 mA EVM @ 19dBm POUT2 2.5 % Detector Output @ 19dBm POUT 340 mV 5 dBm Detector Threshold3 Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. ©2005 Fairchild Semiconductor Corporation RMPA2458 Rev. E 1 www.fairchildsemi.com RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary (RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Typ 3.3 Max Units 2.5 GHz 3.6 V Mirror Supply Voltage 2.9 V Mirror Supply Current 3.3 mA Gain 32 dB Total Current @ 19dBm Pout 130 mA First Side Lobe Power @ 19dBm Pout -36 dBm Second Side Lobe Power @ 19dBm Pout -60 dBm Max Pout Spectral Mask Compliance2 24 dBm Detector Output @ 19dBm Pout Detector Pout Threshold3 1.15 V 5 dBm Electrical Characteristics1 Single Tone Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Mirror Supply Voltage (VM123) 2.6 Gain Typ Max Units 2.5 GHz 3.3 3.6 V 2.9 3.1 V 31.5 dB Total Quiescent Current 49 mA Bias Current at pin VM1234 3.2 mA P1dB Compression 27 dBm Current @ P1dB Compression 600 mA Shutdown Current (VM123 = 0V)