RURG3060_F085

Ultrafast Rectifier 30 A, 600 V RURG3060-F085 Description The RURG3060−F085 is an ultrafast diode with soft recovery characteristics (trr< 80 ns). It has low forward voltage drop and is silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. www.onsemi.com 1 1. Cathode 2. Anode 2 Features • • • • • High Speed Switching (trr = 60 ns(Typ.) @ IF = 30 A) Low Forward Voltage (VF = 1.5 V(Max.) @ IF = 30 A) Avalanche Energy Rated AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free TO−247−2LD CASE 340CL Applications • • • • Automotive DC/DC Converter Automotive On Board Charger Switching Power Supply Power Switching Circuits 1 2 2. Anode 1. Cathode MARKING DIAGRAM $Y&Z&3&K RURG3060 $Y &Z &3 &K RURG3060 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 March, 2020 − Rev. 4 1 Publication Order Number: RURG3060−F085/D RURG3060−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 25°C) IF(AV) 30 A Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) IFSM 90 A EAVL 20 mJ TJ, TSTG −55 to +175 °C DC Blocking Voltage Avalanche Energy (1 A, 40 mH) Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity RURG3060−F085 RURG3060 TO−247−2LD − 30 THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Maximum Thermal Resistance, Junction to Case RqJC 0.7 °C/W Maximum Thermal Resistance, Junction to Ambient RqJA 45 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Instantaneous Reverse Current IR Instantaneous Forward Voltage (Note 1) Reverse Recovery Time (Note 2) Reverse Recovery Time VFM trr ta tb Reverse Recovery Charge Avalanche Energy Test Conditions Min Typ Max Unit TC = 25°C − − 250 mA TC = 175°C − − 1 mA TC = 25°C − 1.26 1.5 V TC = 175°C − 1.06 1.3 V IF = 1 A, di/dt =100 A/ms, VCC = 390 V TC = 25°C − 35 55 ns IF = 30 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 60 80 ns TC = 175°C − 231 − ns IF = 30 A, di/dt = 100 A/ms, VCC = 390 V TC = 25°C − 31 − ns − 29 − ns − 92 − nC 20 − − mJ VR = 600 V IF = 30 A Qrr EAVL IAV = 1.0 A, L = 40 mH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2% 2. Guaranteed by design. www.onsemi.com 2 RURG3060−F085 TYPICAL PERFORMANCE CHARACTERISTICS 400 1000 100 IR, Reverse Current (mA) IF, Forward Current (A) 100 10 1 10 1 0.1 0.01 1E−3 0.1 0.1 0.5 1.0 1.5 1E−4 2.0 0 100 Figure 1. Typical Forward Voltage Drop vs. Forward Current trr, Reverse Recovery Time (ns) 200 100 0.1 1 10 600 150 100 50 0 100 100 200 400 300 500 di/dt (A/ms) Figure 4. Typical Reverse Recovery Time vs. di/dt Figure 3. Typical Junction Capacitance 35 40 IF(AV), Average Forward Current (A) IRR, Reverse Recovery Current (A) 500 200 VR, Reverse Voltage (V) 30 25 20 15 10 5 100 400 250 300 0 300 Figure 2. Typical Reverse Current vs. Reverse Voltage 400 Cj, Capacitance (pF) 200 VR, Reverse Voltage (V) VF, Forward Voltage (V) 200 300 di/dt (A/ms) 400 500 30 20 10 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 5. Typical Reverse Recovery Current vs. di/dt Figure 6. Forward Current Derating Curve www.onsemi.com 3 RURG3060−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Qrr, Reverse Recovery Charge (nC) 2500 2000 1500 1000 500 0 100 200 300 500 400 di/dt (A/ms) Figure 7. Reverse Recovery Charge ZqJC(t), Thermal Response 1 0.1 0.001 10−5 10−4 10−3 10−2 10−1 100 t1, Square Wave Pulse Duration (sec) Figure 8. Transient Thermal Response Curve www.onsemi.com 4 101 102 RURG3060−F085 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L IF DUT RG VGE CURRENT SENSE trr ta tb 0 + − IGBT t1 dIF dt 0.25 IRM VDD IRM t2 Figure 10. trr Waveforms and Definitions Figure 9. trr Test Circuit I=1A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) VAVL L Q1 R CURRENT SENSE + VDD DUT VDD − IL IL I V t0 t1 t2 t Figure 12. Avalanche Current and Voltage Waveforms Figure 11. Avalanche Energy Test Circuit www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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