RURG80100-F085

Ultrafast Rectifier 80 A, 1000 V RURG80100-F085 Description The RURG80100−F085 is an ultrafast diode with low forward voltage drop and soft recovery characteristics. Its low voltage drop and ultrafast soft recovery minimize conduction loss and electrical noise in power switching circuit. Meanwhile, the robust design and high quality manufacture process make it a reliable device for heavy duty automotive applications. This device is intended to be used in a variety of automotive power−train applications for purposes like freewheeling, clamping, rectification, bootstrap and snubber, etc. It’s also an ideal device for non−automotive applications which requires a higher reliability performance. www.onsemi.com 1 1.Cathode 2 2.Anode Features • • • • • • Ultrafast and Soft Recovery Low Forward Voltage (VF = 1.56 V (Typ.) @ IF = 80 A) High Speed Switching (trr = 242 ns (Typ.) @ IF = 80 A) Avalanche Energy Rated AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device TO−247−2LD CASE 340CL Applications • • • • EV and HEV On−Board Charger Stationary Charger Other Automotive Applications General Power Supply Requiring Higher Reliability MARKING DIAGRAM $Y&Z&3&K RURG80100 RURG80100 $Y &Z &3 &K = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March, 2020 − Rev. 3 1 Publication Order Number: RURG80100−F085/D RURG80100−F085 ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted Parameter Symbol Ratings Units VRRM Peak Repetitive Reverse Voltage 1000 V VRWM Working Peak Reverse Voltage 1000 V DC Blocking Voltage 1000 V VR IF(AV) Average Rectified Forward Current @ TC = 25_C 80 A IFSM Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) 240 A EAVL Avalanche Energy (1.6 A, 40 mH) 50 mJ −55 to +175 °C Max. Units TJ, TSTG Operating Junction and Storage Temperature THERMAL CHARACTERISTICS TC = 25°C unless otherwise noted Parameter Symbol RθJC Maximum Thermal Resistance, Junction to Case 0.3 °C/W RθJA Maximum Thermal Resistance, Junction to Ambient 45 °C/W PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Pacing Type Qty per Tube RURG80100 RURG80100−F085 TO−247 − 30 ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted Symbol IR Parameter Instantaneous Reverse Current Conditions VR = 1000 V Min. Typ. Max Units TC = 25°C − − 250 mA TC = 175°C − − 1.5 mA VFM (Note 1) Instantaneous Forward Voltage IF = 80 A TC = 25°C TC = 175°C − − 1.56 1.35 2.0 1.7 V V trr (Note 2) Reverse Recovery Time IF =1 A, di/dt = 100 A/μs, VCC= 650 V TC = 25°C − 122 158 ns IF = 80 A, di/dt = 100 A/μs, VCC= 650 V TC = 25°C TC = 175°C − − 242 979 314 − ns ns IF = 80 A, di/dt = 100 A/ms, VCC= 650 V TC = 25°C − − − 74 168 751 − − − ns ns nC ta tb Qrr Reverse Recovery Time Reverse Recovery Charge 1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%. 2. Guaranteed by design. www.onsemi.com 2 RURG80100−F085 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dI F/dt t 1 AND t 2 CONTROL I F L IF DUT RG VGE CURRENT SENSE dt 0 trr ta tb + VDD 0.25 IRM − IGBT t1 dIF IRM t2 t rr Test Circuit t rr Waveforms and Definitions Avalanche Energy Test Circuit Avalanche Current and Voltage Waveforms Figure 1. Test Circuit and Waveforms www.onsemi.com 3 RURG80100−F085 300 1000 100 100 Reverse Current, IR [mA] Forward Current, IF [A] TYPICAL PERFORMANCE CHARACTERISTICS (continued) TC = 175°C 10 TC = 125°C 1 TC = 25°C 0.1 0.1 0.5 TC = 175°C 10 TC = 125°C 1 0.1 TC = 25°C 0.01 1E−3 1.0 1.5 2.0 1E−4 200 2.5 400 Forward Voltage, VF [V] Figure 2. Typical Forward Voltage Drop vs. Forward Current 1000 1200 IF = 80 A Reverse Recovery Time, trr [ns] Typical Capacitance at 10 V = 239 pF 1000 100 10 0.1 1 10 100 1000 TC = 175°C 800 600 TC = 125°C 400 TC = 25°C 200 100 1000 200 300 Reverse Voltage, VR [V] 400 500 di/dt [A/ms] Figure 5. Typical Reverse Recovery Time vs. di/dt Figure 4. Typical Junction Capacitance 300 70 IF = 80 A Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 800 Figure 3. Typical Reverse Current vs. Reverse Voltage 10000 Capacitance, CJ [pF] 600 Reverse Voltage, VR [V] 60 TC = 175°C 50 40 30 TC = 125°C 20 TC = 25°C 10 0 100 200 300 400 250 200 150 100 50 0 25 500 50 75 100 125 150 175 Case temperature, TC [°C] di/dt [A/ms] Figure 6. Typical Reverse Recovery Current vs. di/dt Figure 7. Forward Current Derating Curve www.onsemi.com 4 RURG80100−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Reverse Recovery Charge, Qrr [nC] 15000 IF = 80 A TC = 175°C 12000 9000 TC = 125°C 6000 3000 TC = 25°C 0 100 200 300 400 500 di/dt [A/ms] Figure 8. Reverse Recovery Charge ZthJC(t), Thermal Response 1 0.1 D=0.5 P DM 0.2 0.01 t1 0.1 0.05 0.02 * Notes : 1. ZthJC(t) = 0.2°C/W Typ. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM × ZthJC(t) 0.01 single pulse 0.001 0.01 −5 10 t2 −4 10 −3 10 −2 −1 10 10 0 10 t1, Square Wave Pulse Duration [s] Figure 9. Transient Thermal Response Curve www.onsemi.com 5 1 10 2 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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