SS24

SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features http://onsemi.com • • • • • • • • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop Pb−Free Package is Available SCHOTTKY BARRIER RECTIFIER 2 AMPERES 20, 40 VOLTS Mechanical Characteristics Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3” Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B SMB CASE 403A PLASTIC MARKING DIAGRAM AYWW SS2xG G SS2x = Specific Device Code x = 2 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device SS22T3 SS24T3 SS24T3G Package SMB SMB SMB (Pb−Free) Shipping † 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 2 Publication Order Number: SS24/D SS22, SS24 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 100°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM VRWM VR IO IFRM Value Unit V 20 40 2.0 3.0 A A SS22 SS24 IFSM Tstg, TC TJ dv/dt 75 −55 to +150 −55 to +125 10,000 A °C °C V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol RqJL RqJA Value 24 80 Unit °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 Maximum Instantaneous Reverse Current (Note 3) see Figure 4 vF (iF = 2.0 A) IR (VR = 40 V) TJ = 25°C 0.50 TJ = 25°C 0.4 TJ = 125°C 0.46 TJ = 100°C 5.7 mA V 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 SS22, SS24 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 100 10 10 TJ = 125°C 1.0 100°C −40 °C 0.1 0.1 0.3 0.5 25°C TJ = 125°C 1.0 100°C 25°C 0.1 0.1 0.3 0.5 0.7 0.9 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage IR , MAXIMUM REVERSE CURRENT (AMPS) 100E−3 IR , REVERSE CURRENT (AMPS) 10E−3 100E−3 10E−3 1.0E−3 TJ = 125°C 100°C TJ = 125°C 100°C 1.0E−3 100E−6 100E−6 25°C 10E−6 1.0E−6 10E−6 25°C 1.0E−6 0 10 20 30 40 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc 2.0 SQUARE WAVE 1.5 1.0 Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 0.5 0 25 45 65 85 Ipk/Io = 20 FREQ = 20 kHz PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) 2.5 1.2 dc 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 IO, AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 105 125 TL, LEAD TEMPERATURE (°C) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 SS22, SS24 TJ , DERATED OPERATING TEMPERATURE (° C) 1000 TJ = 25°C C, CAPACITANCE (pF) 125 115 43°C/W 105 95 85 75 65 63°C/W 80°C/W Rtja = 24°C/W 100 93°C/W 10 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) 0 5.0 10 15 20 25 30 35 40 VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0E+00 50% 20% 10% 5.0% 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 1.0E−01 1.0E−02 1.0E−03 1.0E−04 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response — Junction to Case 50% 20% 10% 5.0% 2.0% 1.0E+00 1.0E−01 1.0E−02 1.0E−03 1.0% Rtjl(t) = Rtjl*r(t) 1.0E−04 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 10. Thermal Response — Junction to Ambient http://onsemi.com 4 SS22, SS24 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE E HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. DIM A A1 b c D E HE L L1 MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 2.03 2.11 0.23 0.30 3.56 3.81 4.32 4.57 5.44 5.59 1.02 1.27 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.095 0.006 0.083 0.012 0.150 0.180 0.220 0.050 b D A L L1 c A1 SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 SS22, SS24 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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