SURS8340T3G

DATA SHEET www.onsemi.com Surface Mount Ultrafast Power Rectifiers MURS320T3G, SURS8320T3G, SURS8320T3G-VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G-VF01 This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C) SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • • • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 217 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band on Plastic Body Indicates Cathode Lead Device Meets MSL1 Requirements ESD Ratings: ♦ Human Body Model, 3B (> 8 kV) ♦ Charged Device Model, > 1000 V (Class C5) © Semiconductor Components Industries, LLC, 2016 January, 2022 − Rev. 19 1 ULTRAFAST RECTIFIERS 3.0 AMPERES 200−600 VOLTS SMC 2−LEAD CASE 403AC MARKING DIAGRAM AYWW U3xG G U3 = Specific Device Code x = D (320T3) = G (340T3) = J (360T3) A = Assembly Location** Y = Year WW= Work Week **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MURS320T3G SMC (Pb−Free) 2,500 / Tape & Reel MURS340T3G SMC (Pb−Free) 2,500 / Tape & Reel MURS360T3G SMC (Pb−Free) 2,500 / Tape & Reel SURS8320T3G*, SURS8320T3G−VF01* SMC (Pb−Free) 2,500 / Tape & Reel SURS8340T3G* SMC (Pb−Free) 2,500 / Tape & Reel SURS8360T3G, SURS8360T3G−VF01* SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MURS320T3/D MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 MAXIMUM RATINGS Rating Symbol MURS320T3G/ SURS8320T3G/ SURS8320T3G−VF01 MURS340T3G/ SURS8340T3G MURS360T3G/ SURS8360T3G/ SURS8360T3G−VF01 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 400 600 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 140°C 4.0 @ TL = 130°C 3.0 @ TL = 130°C 4.0 @ TL = 115°C 3.0 @ TL = 130°C 4.0 @ TL = 115°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature A 100 TJ *65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead 11 RqJL °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) (iF = 4.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) (iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V) tfr Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) V 0.875 0.89 0.71 1.25 1.28 1.05 1.25 1.28 1.05 5.0 150 10 250 10 250 35 25 75 50 75 50 25 50 50 mA ns ns IRM 0.8 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 MURS320T3G/SURS8320T3G/SURS8320T3G−VF01 IR, REVERSE CURRENT (m A) 5.0 3.0 TJ = 175°C 2.0 25°C TJ = 175°C TJ = 100°C 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 25°C 0 20 40 60 1.0 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* 0.7 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.5 10 PF(AV) , AVERAGE POWER DISSIPATION (W)) i F , INSTANTANEOUS FORWARD CURRENT (A) 100°C 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 9.0 8.0 I (CAPACITIVELOAD) PK + 20 I 7.0 5.0 AV 10 6.0 5.0 4.0 dc 3.0 SQUARE WAVE 2.0 1.0 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 Figure 1. Typical Forward Voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 90 100 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Power Dissipation 200 RATED VOLTAGE APPLIED RqJL = 11°C/W TJ = 175°C 8.0 TYPICAL CAPACITANCE AT 0 V = 135 pF 7.0 C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (A) 10 9.0 6.0 5.0 4.0 3.0 dc 2.0 100 80 60 40 30 20 SQUARE WAVE 1.0 10 0 90 100 110 120 130 140 150 160 170 180 190 0 10 20 30 40 50 60 70 80 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS) Figure 4. Current Derating, Case Figure 5. Typical Capacitance www.onsemi.com 3 MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 TYPICAL CHARACTERISTICS 400 200 5.0 IR, REVERSE CURRENT (m A) 3.0 100°C TJ = 175°C 25°C 1.0 TJ = 100°C 0.08 0.04 0.02 TJ = 25°C 0.008 0.004 0.7 0 200 100 0.5 300 400 600 500 700 VR, REVERSE VOLTAGE (V) Figure 7. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F , INSTANTANEOUS FORWARD CURRENT (A) 2.0 TJ = 175°C 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.1 0.07 0.05 0.03 0.02 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 10 9.0 8.0 7.0 SQUARE WAVE 6.0 dc (CAPACITIVE LOADS) 5.0 I 4.0 I 3.0 PK + 20 10 5.0 AV 2.0 1.0 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 Figure 6. Typical Forward Voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 90 100 IF(AV), AVERAGE FORWARD CURRENT (A) 10 100 9.0 90 8.0 80 C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (A) Figure 8. Power Dissipation 7.0 6.0 5.0 4.0 dc 3.0 SQUARE WAVE 2.0 TYPICAL CAPACITANCE AT 0 V = 75 pF 70 60 50 40 30 20 1.0 10 0 0 70 80 90 100 110 120 130 140 150 160 170 0 10 20 30 40 50 60 70 80 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 9. Current Derating, Case Figure 10. Typical Capacitance www.onsemi.com 4 MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 MURS320T3G, SURS8320T3G, SURS8320T3G−VF01, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G, SURS8360T3G−VF01 IFSM, NON−REPETITIVE SURGE CURRENT (A) 10000 1000 100 10 10 100 1,000 tp, SQUARE WAVE PULSE DURATION (ms) 10,000 Figure 11. Typical Non−Repetitive Surge Current *Typical performance based on a limited sample size. onsemi does not guarantee ratings not listed in the Maximum Ratings table. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B DATE 27 JUL 2017 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. HE E D A1 DIM A A1 A2 b c D E HE L c DETAIL A TOP VIEW DETAIL A A2 L A b END VIEW SIDE VIEW INCHES MIN MAX 0.077 0.103 0.002 0.008 0.075 0.095 0.114 0.126 0.006 0.016 0.219 0.246 0.260 0.281 0.305 0.321 0.030 0.063 GENERIC MARKING DIAGRAM* AYWW XXXXG G RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 2X MILLIMETERS MIN MAX 1.95 2.61 0.05 0.20 1.90 2.41 2.90 3.20 0.15 0.41 5.55 6.25 6.60 7.15 7.75 8.15 0.75 1.60 XXXX A Y WW G 3.790 0.149 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 2X 2.250 0.089 mm Ǔ ǒinches SCALE 4:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON97675F SMC 2−LEAD *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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