SVD5806NT4G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com RDS(on) MAX V(BR)DSS ID MAX 26 mW @ 4.5 V 40 V 33 A 19 mW @ 10 V D Applications • CCFL Backlight • DC Motor Control • Power Supply Secondary Side Synchronous Rectification N−CHANNEL MOSFET G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS ±30 V Parameter ID TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 33 23 PD 40 W IDM 67 A TJ, Tstg −55 to 175 °C IS 33 A EAS 39 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit °C/W Junction−to−Case (Drain) RqJC 3.7 Junction−to−Ambient − Steady State (Note 1) RqJA 57.5 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces. 3 DPAK CASE 369C (Surface Mount) STYLE 2 2 3 IPAK CASE 369D (Straight Lead DPAK) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain 4 Drain AYWW 58 06NG Steady State Pulsed Drain Current 1 1 2 TC = 25°C Power Dissipation (RqJC) (Note 1) 4 AYWW 58 06NG Continuous Drain Current (RqJC) (Note 1) 4 2 1 Drain 3 Gate Source A Y WW 5806N G 1 2 3 Gate Drain Source = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 7 1 Publication Order Number: NTD5806N/D NTD5806N, NVD5806N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 45.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 29.5 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance 1.4 5.8 RDS(on) mV/°C VGS = 10 V, ID = 15 A 12.7 19 VGS = 4.5 V, ID = 10 A 17.8 26 mW CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss pF 860 VGS = 0 V, f = 1.0 MHz, VDS = 25 V Output Capacitance Coss Reverse Transfer Capacitance Crss 100 Total Gate Charge QG(TOT) 17 Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 20 V, ID = 30 A 130 38 nC 0.95 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.4 4.5 td(on) 10.6 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 93.7 14.2 tf 4.3 td(on) 8.0 tr td(off) VGS = 10 V, VDD = 20 V, ID = 30 A, RG = 2.5 W tf ns ns 49 19.8 2.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A TJ = 25°C 0.86 TJ = 150°C 0.69 18.8 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR 1.2 V ns 11.8 7.0 10.9 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD5806N, NVD5806N TYPICAL PERFORMANCE CHARACTERISTICS 70 70 TJ = 25°C 10 V 4.5 V 50 VGS = 7, 6, 5.8, 5.5, 5.2, 5 V 40 4.0 V 30 20 3.5 V 10 40 30 TJ = 100°C 20 TJ = 25°C TJ = −55°C 0 0.5 1 1.5 2 2.5 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.021 ID = 15 A TJ = 25°C 0.019 0.017 0.015 0.013 0.011 4 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.05 TJ = 25°C 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 10 2.0 1.9 I = 30 A D 1.8 V = 10 V GS 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 20 30 40 60 50 70 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 VGS = 0 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 50 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 TJ = 150°C 1000 TJ = 100°C 100 10 25 50 75 100 125 150 175 2 12 22 32 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 42 NTD5806N, NVD5806N TYPICAL PERFORMANCE CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 15 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C 1500 30 QT 10 Ciss 1000 500 Coss Crss 0 10 5 Vgs 0 5 10 Vds 15 20 25 30 35 5 Qgs VGS 10 Qgd ID = 30 A TJ = 25°C 0 40 5 0 10 0 20 15 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) 15 VDD = 32 V ID = 30 A VGS = 10 V tf td(off) tr 100 td(on) 10 VGS = 0 V TJ = 25°C 10 5 0 1 1 10 0.4 100 0.6 0.5 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 20 VDS VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2000 100 10 ms 100 ms 10 1 0.1 0.1 VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 ms 10 ms dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.0 NTD5806N, NVD5806N r(t), Effective Transient Thermal Resistance (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS 10 D = 0.5 1 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† IPAK (Straight Lead DPAK) (Pb−Free) 75 Units / Rail NTD5806NT4G DPAK (Pb−Free) 2500 / Tape & Reel NVD5806NT4G* DPAK (Pb−Free) 2500 / Tape & Reel SVD5806NT4G* DPAK (Pb−Free) 2500 / Tape & Reel Order Number NTD5806NG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 NTD5806N, NVD5806N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD5806N, NVD5806N PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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