2SC3970A

Power Transistors 2SC3970, 2SC3970A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 Parameter Collector to base voltage Collector to 2SC3970 2SC3970A 2SC3970 Symbol VCBO VCES VCEO VEBO ICP IC IB emitter voltage 2SC3970A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V V A A A W ˚C ˚C Solder Dip s Absolute Maximum Ratings 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3970 2SC3970A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA V 1 Power Transistors PC — Ta 40 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0 IB=150mA 100mA 0.8 80mA 60mA 0.6 40mA 2SC3970, 2SC3970A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 25˚C 0.3 TC=100˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 VCE(sat) — IC Collector power dissipation PC (W) 30 (1) 20 Collector current IC (A) 0.4 20mA 10mA 10 (2) (3) (4) 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC Collector output capacitance Cob (pF) IC/IB=5 1000 VCE=5V 1000 Cob — VCB IE=0 f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 30 Forward current transfer ratio hFE 300 300 10 100 100 3 TC=–25˚C 1 100˚C 0.3 25˚C 30 25˚C TC=100˚C 30 10 –25˚C 10 3 3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) fT — IC 100 VCE=10V f=1MHz TC=25˚C 100 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=3.5 (2IB1=–IB2) VCC=200V TC=25˚C ton Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25˚C t=0.5ms 1 10ms 0.3 0.1 0.03 0.01 0.003 0.001 DC 1ms Transition frequency fT (MHz) Switching time ton,tstg,tf (µs) 30 10 3 tstg 1 0.3 10 3 1 tf 0.1 0.03 0.3 0.1 0.01 0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0 Collector current IC (A) 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 4.0 3.5 Lcoil=180µH IC/IB=5 (IB1=–IB2) TC