LNCQ03PS

Semiconductor Laser LNCQ03PS Red Light Semiconductor Laser For optical control systems 0.4±0.1 ø5.6 +0 –0.025 ø4.4 ø3.55±0.1 1.0±0.1 Unit : mm 2 Reference slot High output operations with oscillatins wavelength of 660nm : 35mw Low threshold current Stable single horizontal mode osillation Space saved by miniaturization Low astigmatic difference facilitates good concentrated light spot, production. 110˚±1˚ Features PD 3 Junction plane Reference plane 1 LD 2.3 1.27±0.07 0.25 ø1.0 min. Reference plane 1.2 3-ø0.45 6.5 Applications DVD-Ram Pointer ø2.0 1 2 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 35 1.5 30 60 –10 to +60 – 40 to +85 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Symbol Ith IOP VOP RS λL SE Horizontal direction Vertical direction Conditions CW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 4mW CW PO = 4mW min 20 50 2.0 3.0 635 0.5 7.5 17 –2.0 –3.0 typ 50 95 2.5 5.0 660 0.7 8.5 22 max 70 120 3.0 10 675 1.1 10.5 26.5 +2.0 +3.0 Unit mA mA V Ω nm W/A deg. deg. deg. deg. µm Resistance between electrodes Oscillation wavelength Slope efficiency Radiation angle Optical axis accuracy *1 *2 *3 θ// θ⊥ θX θY As*2 X direction Y direction Astigmatic difference 5.0 10 θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle ) Reference to package axis. Guaranteed value in design. 1 Semiconductor Laser LNCQ03PS PO — IOP 80 160 Ta = 25˚C I—V 100 Far field pattern Radiant power PO (mW) 60 120 Relative radiant power ∆PO 75 40 I (mA) 80 50 20 Current 40 25 Fv Fh 0 0 50 100 150 200 0 0 1 2 3 4 0 60 40 20 0 20 40 60 Operating current IOP (mA) Voltage V (V) Angle θ (deg.) Ith — Ta 10 2 10 3 IOP — Ta 0.4 IP — Ta IOP (mA) Ith (mA) IP (µA) PIN photo current 0 20 40 60 80 10 2 10 0.3 Threshold current Operating current 10 0.2 0.1 1 0 20 40 60 80 0 –20 0 20 40 60 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) PO — Ta 50 10 2 Id — Ta VR (PIN) = 30V 40 10 Radiant power PO (mW) PIN dark current Id (nA) 10 30 50 70 30 1 20 10 –1 10 10 –2 0 – 10 10 –3 – 10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) 2