FY4ADJ-03A

MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE FY4ADJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 Œ Ž SOURCE   GATE  ‘ ’ “ DRAIN Œ Ž   q 4V DRIVE q VDSS ............................................................................... –30V q rDS (ON) (MAX) ............................................................. 80mΩ q ID ......................................................................................... –4A ’“ ‘ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings –30 ±20 –4 –28 –4 –1.7 –6.8 1.6 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = 10V ID = –4A, VGS = –10V ID = –2A, VGS = –4V ID = –4A, VGS = –10V ID = –4A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –30 — — –1.5 — — — — — — — — — — — — — — Typ. — — — –2.0 60 115 –0.24 6 680 180 90 10 15 50 30 –0.88 — 70 Max. — ±0.1 –0.1 –2.5 80 180 –0.32 — — — — — — — — –1.20 78.1 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω IS = –1.7A, VGS = 0V Channel to ambient IS = –1.7A, dis/dt = 50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –3 –2 1.6 –101 –7 –5 –3 –2 tw = 100µs 1ms 1.2 –100 –7 –5 –3 –2 10ms 100ms 0.8 0.4 –10–1 –7 –5 TC = 25°C Single Pulse DC –3 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 0 0 50 100 150 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS = –10V –8V –6V –5V OUTPUT CHARACTERISTICS (TYPICAL) –10 VGS = –10V –8V –6V –5V –4V DRAIN CURRENT ID (A) –16 DRAIN CURRENT ID (A) –8 –12 –4V –6 TC = 25°C Pulse Test –3V –8 TC = 25°C Pulse Test –4 –4 –3V PD = 1.6W –2 PD = 1.6W 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test VGS = –4V –1.6 160 –1.2 120 –0.8 ID = –8A 80 –10V –0.4 –4A –2A 40 0 –10–1 –2 –3 –5–7 –100 –2 –3 –5–7–101 –2 –3 –5–7 –102 DRAIN CURRENT ID (A) 0 0 –2 –4 –6 –8 –10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) –20 TC = 25°C VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = –10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) –12 FORWARD TRANSFER ADMITTANCE yfs (S) –16 101 7 5 4 3 2 –8 –4 0 0 –2 –4 –6 –8 –10 100 0 –10 –2 –3 –4 –5 –7–101 –2 –3 –4 –5 –7–102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 4 3 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 td(on) td(off) tf Coss Crss 102 7 5 4 3 2 TCh = 25°C f = 1MHZ VGS = 0V –2 –3 –4 –5 –7–100 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 101 7 tr 5 4 3 TCh = 25°C 2 VDD = –15V VGS = –10V RGEN = RGS = 50Ω –2 –3 –4 –5 –7–100 –2 –3 –4 –5 –7–101 101 –1 –10 –2 –3 –4 –5 –7–101 100 –1 –10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test –10 TCh = 25°C ID = –4A VDS = –10V –20V –25V –8 –16 TC = 125°C 75°C 25°C –6 –12 –4 –8 –2 –4 0 0 4 8 12 16 20 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = –10V 7 ID = –4A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = –10V ID = –1mA –3.2 –2.4 100 7 5 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 D = 1.0 5 3 0.5 2 1.2 101 0.2 7 5 0.1 3 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.0 0.8 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (°C)