FY4AEJ-03

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FY4AEJ-03 OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 Œ Ž SOURCE   GATE  ‘ ’ “ DRAIN ’“   Ž q q q q 4V DRIVE VDSS ............................................................................... ± 30V rDS (ON) (MAX) ........................................................ 30/80mΩ ID ......................................................................................... ± 4A Œ ‘ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control, DC-DC converter, Li-ionbattery, notebook p/c, etc MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value L = 10µH VGS = 0V VDS = 0V Conditions Ratings n-ch 30 ±20 4 28 4 1.7 6.8 1.6 –55~+150 –55~+150 0.07 p-ch –30 ± 20 –4 –28 –4 –1.7 –6.8 1.6 Unit V V A A A A A W °C °C g Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) N-ch Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V Limits Min. 30 — — 1.0 — — — — — — — VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω — — — — — — Typ. — — — 1.5 23 40 8 550 220 115 12 20 40 40 0.75 — 100 Max. — ± 0.1 0.1 2.0 30 55 — — — — — — — — 1.10 78.1 — Unit V µA mA V mΩ mΩ S pF pF pF ns ns ns ns V °C/W ns Gate-source threshold voltage ID = 1mA, VDS = 10V Drain-source on-state resistance ID = 4A, VGS = 10V Drain-source on-state resistance ID = 2A, VGS = 4V Forward transfer admittance ID = 4A, VDS = 10V Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDS = 10V, VGS = 0V, f = 1MHz IS = 1.7A, VGS = 0V Channel to ambiet IS = 1.7A, dis/d t = –50A/ µs P-ch Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage ID = 1mA, V GS = 0V Gate-source leakage current Drain-source leakage current Gate-source threshold voltage VGS = ± 20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V Test conditions Limits Min. –30 — — –1.5 — — — — — — — VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω — — — — — — Typ. — — — –2.0 60 115 6 680 180 90 10 15 50 30 –0.88 — 70 Max. — ± 0.1 –0.1 –2.5 80 180 — — — — — — — — –1.20 78.1 — Unit V µA mA V mΩ mΩ S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance ID = –4A, V GS = –10V Drain-source on-state resistance ID = –2A, V GS = –4V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ID = –4A, V DS = –10V VDS = –10V, VGS = 0V, f = 1MHz IS = –1.7A, VGS = 0V Channel to ambiet IS = –1.7A, dis/d t = 50A/µs Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET PERFORMANCE CURVES (N-ch) POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10µs 100µs 1ms 10ms 100ms TC = 25°C Single Pulse DRAIN CURRENT ID (A) 1.6 101 7 5 3 2 1.2 100 0.8 7 5 3 2 7 5 3 0.4 10–1 DC 23 5 7 100 23 5 7 101 23 5 0 0 50 100 150 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS =10V,8V,6V,5V 4V OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 10V,8V,6V,5V 4V DRAIN CURRENT ID (A) 12 Tc = 25°C Pulse Test DRAIN CURRENT ID (A) 16 8 6 3V 8 3V PD = 1.6W 4 PD = 1.6W 4 2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) Tc = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 Tc = 25°C Pulse Test 0.8 80 0.6 60 VGS = 4V 0.4 ID = 8A 4A 40 10V 0.2 2A 20 0 0 2 4 6 8 10 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) Aug. 1999 GATE-SOURCE VOLTAGE VGS (V) MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 TRANSFER CHARACTERISTICS (TYPICAL) 20 DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 3 2 12 Tc = 25°C VDS = 10V Pulse Test 101 7 5 3 2 TC = 25°C, 75°C,125°C VDS =10V Pulse Test 8 4 0 0 2 4 6 8 10 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 2 103 102 Ciss tf td(off) tr CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 SWITCHING TIME (ns) 7 5 3 2 Coss 101 7 5 3 2 td(on) 102 7 5 3 2 Crss Tch = 25°C VGS = 0V f = 1MHZ 23 5 7 100 23 5 7 101 2 10–1 100 10–1 Tch = 25°C VGS = 10V VDD = 15V RGEN = RGS = 50Ω 2 3 5 7 100 2 3 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 10 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 8 VDS = 15V SOURCE CURRENT IS (A) 16 TC = 125°C 75°C 25°C 6 12 4 20V 25V 8 2 Tch = 25°C ID =4A 4 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 4.0 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.2 2.4 VDS = 10V ID = 1mA Pulse Test 100 7 5 3 2 VGS = 10V ID = 4A Pulse Test 1.6 0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 101 7 5 3 2 1.0 VGS = 0V ID = 1mA Pulse Test 0.8 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET PERFORMANCE CURVES (P-ch) POWER DISSIPATION DERATING CURVE 2.0 MAXIMUM SAFE OPERATING AREA –5 –3 –2 tw = POWER DISSIPATION PD (W) 10µs 100µs 1ms 10ms 100ms TC = 25°C Single Pulse DRAIN CURRENT ID (A) 1.6 1.2 –101 –7 –5 –3 –2 –100 –7 –5 –3 –2 –10–1 –7 –5 –3 0.8 0.4 DC –5 0 0 50 100 150 200 –2 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS =–10V –8V PD = 1.6W –6V –10 OUTPUT CHARACTERISTICS (TYPICAL) VGS = –10V,–8V,–6V,–5V PD = 1.6W –4V DRAIN CURRENT ID (A) –5V Tc = 25°C Pulse Test –4V DRAIN CURRENT ID (A) –16 –8 –12 –6 Tc = 25°C Pulse Test –3V –2 –8 –4 –4 –3V 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –2.0 200 Tc = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) VGS =–4V DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) –1.6 160 –1.2 120 Tc = 25°C Pulse Test –0.8 ID =–8A 80 –0.4 –4A –2A 40 –10V 0 0 –2 –4 –6 –8 –10 0 –10–1 –2 –3 –5 –7–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 DRAIN CURRENT ID (A) Aug. 1999 GATE-SOURCE VOLTAGE VGS (V) MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 TRANSFER CHARACTERISTICS (TYPICAL) –20 DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) –16 3 2 –12 Tc = 25°C VDS = –10V Pulse Test 101 7 5 3 2 TC = 25°C 75°C 125°C –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 VDS = –10V Pulse Test –8 –4 0 0 –2 –4 –6 –8 –10 100 0 –10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 2 103 102 SWITCHING TIME (ns) Ciss 7 5 3 2 td(on) tf tr td(off) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 Coss 101 7 5 3 2 Tch = 25°C VGS = –10V VDD = –15V RGEN = RGS = 50Ω –2 –3 –5 –7 –100 –2 –3 –5 –7 –101 102 7 5 3 2 Tch = 25°C VGS = 0V f = 1MHZ Crss –10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7–101 –2 DRAIN-SOURCE VOLTAGE VDS (V) 100 –10–1 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) –10 –20 VDS = SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –8 SOURCE CURRENT IS (A) –10V –20V –25V –16 TC = 125°C 75°C 25°C –6 –12 –4 –8 VGS = 0V Pulse Test –2 Tch = 25°C ID = –4A –4 0 0 4 8 12 16 20 24 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FY4AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 –3.2 VDS = –10V ID = –1mA –2.4 100 7 5 3 2 VGS = –10V ID = –4A Pulse Test –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.2 101 7 5 3 2 1.0 VGS = 0V ID = –1mA PDM 0.8 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Aug. 1999