FY5ACH-03A

MITSUBISHI Nch POWER MOSFET FY5ACH-03A HIGH-SPEED SWITCHING USE FY5ACH-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 Œ Ž SOURCE   GATE  ‘ ’ “ DRAIN ’“ ‘   q 2.5V DRIVE q VDSS .................................................................................. 30V q rDS (ON) (MAX) ............................................................. 50mΩ q ID ........................................................................................... 5A Œ Ž SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±10 5 35 5 1.7 6.8 1.6 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY5ACH-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VDS = 0V VGS = ±10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 2.5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 0.5 — — — — — — — — — — — — — — Typ. — — — 0.9 40 52 0.20 11 750 180 80 18 45 52 44 0.75 — 100 Max. — ±0.1 0.1 1.3 50 80 0.25 — — — — — — — — 1.1 78.1 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, ID = 2.5A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.7A, VGS = 0V Channel to ambient IS = 1.7A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10µs 1.6 101 7 5 3 2 100µs 1.2 1ms 0.8 100 7 5 3 2 10ms 100ms 0.4 10–1 TC = 25°C 0 0 50 100 150 200 7 5 Single Pulse DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 5V 4V 3.5V 3V TC = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 5V 4V 3.5V 3V 2.5V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 2.5V 8 12 6 2V 8 2V 4 PD = 1.6W 4 1.5V PD = 1.6W 2 1.5V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET FY5ACH-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test 1.6 80 VGS = 2.5V 1.2 60 0.8 ID = 12A 5A 3A 40 4V 0.4 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 TC = 25°C 2 75°C 125°C 7 5 4 3 2 DRAIN CURRENT ID (A) 12 FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 8 4 0 0 1.0 2.0 3.0 4.0 5.0 100 7 100 2 3 4 5 7 101 2 3 45 7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 Ciss TCh = 25°C 7 VDD = 15V 5 VGS = 4V 4 RGEN = RGS = 50Ω 3 2 tr 103 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 4 3 2 Coss Crss SWITCHING TIME (ns) 102 7 5 4 3 2 td(off) tf 102 7 5 4 TCh = 25°C 3 f = 1MHZ VGS = 0V 2 10–1 2 3 4 5 7 100 td(on) 2 3 4 5 7 101 101 7 100 2 3 4 5 7 101 2 3 45 7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET FY5ACH-03A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 5.0 TCh = 25°C ID = 5A 4.0 VDS = 7V 10V 15V 16 TC = 125°C 75°C 25°C 3.0 12 2.0 8 1.0 4 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 4V 7 ID = 5A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 1.6 1.2 100 7 5 3 2 0.8 0.4 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 D = 1.0 5 3 0.5 2 1.2 101 0.2 7 5 0.1 3 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.0 0.8 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (°C)