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844625BYILF

844625BYILF

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    48-TQFP Exposed Pad

  • 描述:

    IC GENERATR CLK SAS/SATA 8SOIC

  • 数据手册
  • 价格&库存
844625BYILF 数据手册
Crystal-to-LVDS Clock Synthesizer ICS844625I DATA SHEET General Description Features The ICS844625I is a high frequency clock generator. The ICS844625I uses an external 25MHz crystal to synthesize 312.5MHz, 156.25MHz and 125MHz clocks. The ICS844625I has excellent cycle-to-cycle and RMS period jitter performance. • • Ten selectable differential LVDS outputs • Crystal oscillator interface designed for 18pF, 25MHz parallel resonant crystal • • Cycle-to-cycle jitter: 13ps (typical) • RMS phase jitter at 156.25MHz (1.875MHz - 20MHz): 0.387ps (typical), VDD = 3.3V • • Output duty cycle: 50%, (typical) • • -40°C to 85°C ambient operating temperature The ICS844625I operates at full 3.3V, 2.5V or mixed 3.3V, 2.5V supply modes and is available in a fully RoHS compliant 48-lead TQFP, E-Pad package. Output frequencies of 312.5MHz, 156.25MHz or 125MHz using a 25MHz crystal. RMS phase jitter at 125MHz (1.875MHz - 20MHz): 0.417ps (typical), VDD = 3.3V Supply modes: VDD / VDDA / VDDO 3.3V / 3.3V / 3.3V 2.5V / 2.5V / 2.5V 3.3V / 3.3V / 2.5V Available in lead-free (RoHS 6) package Frequency Table for Bank A, B and C Outputs Crystal Frequency (MHz) Feedback Divider VCO Frequency (MHz) Output Divider Output Frequency (MHz) 25 25 625 ÷2 312.5 25 25 625 ÷4 156.25 25 25 625 ÷5 125 VDDO nQC1 SELB1 GND ICS844625I ICS844625BYI REVISION A NOVEMBER 12, 2012 1 QA1 nQA1 QA2 nQA2 VDDO GND QA3 nQA3 QA4 nQA4 QA5 nQA5 VDDO OEB OEC SELB0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 5 48 Lead TQFP, E-Pad 32 6 31 7mm x 7mm x 1.0mm 30 7 package body 8 29 9 28 Y Package 10 27 Top View 11 26 12 25 13 14 15 16 17 18 19 20 21 22 23 24 1 2 3 4 QC1 nQC0 QC0 nc VDDO nQB1 QB1 nQB0 QB0 XTAL_IN XTAL_OUT GND SELC0 SELC1 OEA VDD VDDO VDD REF_CLK GND BYPASS MR nc SELA0 SELA1 VDDA QA0 nQA0 Pin Assignment ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Block Diagram OEA Pullup SELA[0:1] Pulldown BYPASS Pulldown REF_CLK Pulldown XTAL_IN 2 1 25MHz Phase Detector OSC ÷2, ÷4, ÷5 VCO 625MHz 6 QA[0:5] nQA[0:5] 0 XTAL_OUT M = ÷25 MR OEB SELB[0:1] Pulldown Pullup Pulldown 2 2 QB[0:1] ÷2, ÷4, ÷5 nQB[0:1] 2 ÷2, ÷4, ÷5 SELC[0:1] OEC Pulldown QC[0:1] nQC[0:1] 2 Pullup ICS844625BYI REVISION A NOVEMBER 12, 2012 2 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Table 1. Pin Descriptions Number Name 1, 2 XTAL_IN XTAL_OUT Type Description Input Crystal oscillator interface. XTAL_IN is the input, XTAL_OUT is the output. 3, 12, 31, 46 GND Power Power supply pins. 4, 5 SELC0, SELC1 Input Pulldown 6 OEA Input Pullup 7, 48 VDD Power 8 OEB Input Pullup Active high output enable. When logic HIGH, Bank B outputs are enabled and active. When logic LOW, the outputs are disabled and forced to HIGH/LOW. LVCMOS/LVTTL interface levels. 9 OEC Input Pullup Active high output enable. When logic HIGH, Bank C outputs are enabled and active. When logic LOW, the outputs are disabled and forced to HIGH/LOW. LVCMOS/LVTTL interface levels. 10, 11 SELB0, SELB1 Input Pulldown 13, 19, 24, 32, 37 VDDO Power Output supply pins. 14, 15 nQC1, QC1 Output Differential output pair. LVDS interface levels. 16, 17 nQC0, QC0 Output Differential output pair. LVDS interface levels. 18, 43 nc Unused No connect. 20, 21 nQB1, QB1 Output Differential output pair. LVDS interface levels. 22, 23 nQB0, QB0 Output Differential output pair. LVDS interface levels. 25, 26 nQA5, QA5 Output Differential output pair. LVDS interface levels. 27, 28 nQA4, QA4 Output Differential output pair. LVDS interface levels. 29, 30 nQA3, QA3 Output Differential output pair. LVDS interface levels. 33, 34 nQA2, QA2 Output Differential output pair. LVDS interface levels. 35, 36 nQA1, QA1 Output Differential output pair. LVDS interface levels. 38, 39 nQA0, QA0 Output Differential output pair. LVDS interface levels. 40 VDDA Power Analog supply pin. 41, 42 SELA1, SELA0 Input Pulldown Selects the output divider value. See Table 3A. LVCMOS/LVTTL interface levels. 44 MR Input Pulldown Master Reset. LVCMOS/LVTTL interface levels. 45 BYPASS Input Pulldown BYPASS signal allows to bypass the PLL. LVCMOS/LVTTL interface levels. 47 REF_CLK Input Pulldown Single-ended reference clock input. LVCMOS/LVTTL interface levels. Selects the output divider value. See Table 3C. LVCMOS/LVTTL interface levels. Active high output enable. When logic HIGH, Bank A outputs are enabled and active. When logic LOW, the outputs are disabled and forced to HIGH/LOW. LVCMOS/LVTTL interface levels. Core supply pins. Selects the output divider value. See Table 3B. LVCMOS/LVTTL interface levels. NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values. ICS844625BYI REVISION A NOVEMBER 12, 2012 3 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Table 2. Pin Characteristics Symbol Parameter Test Conditions Minimum Typical Maximum Units CIN Input Capacitance 4 pF RPULLUP Input Pullup Resistor 51 k RPULLDOWN Input Pulldown Resistor 51 k Function Tables Table 3A. SELA Function Table Input SELA0 SELA1 Bank A Output Divider 0 0 N/A 0 1 ÷2 1 0 ÷4 1 1 ÷5 Table 3B. SELB Function Table Input SELB0 SELB1 Bank B Output Divider 0 0 N/A 0 1 ÷2 1 0 ÷4 1 1 ÷5 Table 3C. SELC Function Table Input SELC0 SELC1 Bank C Output Divider 0 0 N/A 0 1 ÷2 1 0 ÷4 1 1 ÷5 ICS844625BYI REVISION A NOVEMBER 12, 2012 4 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VCC 4.6V Inputs, VI XTAL_IN Other Inputs 0V to VDD -0.5V to VDD + 0.5V Outputs, LVDS IO Continuos Current Surge Current 10mA 15mA Package Thermal Impedance, JA 29C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 4A. LVDS Power Supply DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter VDD Core Supply Voltage VDDA Test Conditions Minimum Typical Maximum Units 3.135 3.3 3.465 V Analog Supply Voltage VDD – 0.31 2.5 VDD V VDDO Output Supply Voltage 3.135 3.3 3.465 V IDD Power Supply Current 101 125 mA IDDA Analog Supply Current 25 31 mA IDDO Output Supply Current 113 140 mA Table 4B. LVDS Power Supply DC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VDD Core Supply Voltage VDDA Minimum Typical Maximum Units 2.375 2.5 2.625 V Analog Supply Voltage VDD – 0.21 2.5 VDD V VDDO Output Supply Voltage 2.375 2.5 2.625 V IDD Power Supply Current 96 120 mA IDDA Analog Supply Current 17 21 mA IDDO Output Supply Current 95 128 mA ICS844625BYI REVISION A NOVEMBER 12, 2012 Test Conditions 5 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Table 4C. LVDS Power Supply DC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units VDD Core Supply Voltage 3.135 3.3 3.465 V VDDA Analog Supply Voltage VDD – 0.31 2.5 VDD V VDDO Output Supply Voltage 2.375 2.5 2.625 V IDD Power Supply Current 100 125 mA IDDA Analog Supply Current 25 31 mA IDDO Output Supply Current 112.5 140 mA Typical Maximum Units Table 4D. LVCMOS/LVTTL DC Characteristics, TA = -40°C to 85°C Symbol Parameter VIH Input High Voltage VIL Input Low Voltage IIH Input High Current IIL Input Low Current Test Conditions Minimum VDD = 3.3V 2 VDD + 0.3 V VDD = 2.5V 1.7 VDD + 0.3 V VDD = 3.3V -0.3 0.8 V VDD = 2.5V -0.3 0.7 V REF_CLK, MR, BYPASS, SELA[1:0], SELB[1:0], SELC[1:0] VDD = VIN = 3.465V or 2.625V 150 µA OEA, OEB, OEC VDD = VIN = 3.465V or 2.625V 5 µA REF_CLK, MR, BYPASS, SELA[1:0], SELB[1:0], SELC[1:0] VDD = 3.465V or 2.625V, VIN = 0V -5 µA OEA, OEB, OEC VDD = 3.465V or 2.625V, VIN = 0V -150 µA ICS844625BYI REVISION A NOVEMBER 12, 2012 6 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Table 4E. LVDS DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter VOD Differential Output Voltage VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change Test Conditions Minimum Typical Maximum Units 248 380 480 V 50 V 1.52 V 50 V 1.30 1.43 Table 4F. LVDS DC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VOD Differential Output Voltage VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change Test Conditions Minimum Typical Maximum Units 205 329 420 V 50 V 1.50 V 50 V 1.00 1.15 Table 4G. LVDS DC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VOD Differential Output Voltage VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change Test Conditions Minimum Typical Maximum Units 248 380 480 V 50 V 1.52 V 50 V Maximum Units 1.30 1.43 Table 5. Crystal Characteristics Parameter Test Conditions Mode of Oscillation Minimum Typical Fundamental Frequency 25 MHz Equivalent Series Resistance (ESR) 50  Shunt Capacitance 7 pF ICS844625BYI REVISION A NOVEMBER 12, 2012 7 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER AC Electrical Characteristics Table 6A. LVDS AC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter fOUT Output Frequency tjit(Ø) RMS Phase Jitter (Random); QAx = QBx = QCx tjit(cc) Cycle-to-Cycle Jitter; NOTE 1 tR / tF Output Rise/Fall Time odc Output Duty Cycle tLOCK PLL Lock Time Test Conditions Minimum Typical Maximum Units Qx = ÷2 312.5 MHz Qx = ÷4 156.25 MHz Qx = ÷5 125 MHz 125MHz, (1.875MHz – 20MHz) 0.417 0.484 ps 156.25MHz, (1.875MHz – 20MHz) 0.387 0.429 ps 156.25MHz, (1MHz – 20MHz) 0.509 0.570 ps 312.5MHz, (1.875MHz – 20MHz) 0.335 0.410 ps 13 50 ps fOUT = 312.5MHz, 20% to 80% 350 600 1200 ps fOUT = 125MHz, 156.25MHz, 20% to 80% 400 700 1200 ps fOUT = 312.5MHz 35 48 60 % fOUT = 125MHz, 156.25MHz 45 50 55 % 100 ms NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: This parameter is defined in accordance with JEDEC Standard 65. Table 6B. LVDS AC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol fOUT Parameter Output Frequency tjit(Ø) RMS Phase Jitter (Random); QAx = QBx = QCx tjit(cc) Cycle-to-Cycle Jitter; NOTE 1 tR / tF Output Rise/Fall Time odc Output Duty Cycle tLOCK PLL Lock Time Test Conditions Minimum Typical Maximum Units Qx = ÷2 312.5 MHz Qx = ÷4 156.25 MHz Qx = ÷5 125 125MHz, (1.875MHz – 20MHz) 0.498 0.633 MHz ps 156.25MHz, (1.875MHz – 20MHz) 0.454 0.552 ps 156.25MHz, (1MHz – 20MHz) 0.646 0.768 ps 312.5MHz, (1.875MHz – 20MHz) 0.350 0.429 ps 13 50 ps fOUT = 312.5MHz, 20% to 80% 350 600 1200 ps fOUT = 125MHz, 156.25MHz, 20% to 80% 400 700 1200 ps fOUT = 312.5MHz 35 48 60 % fOUT = 125MHz, 156.25MHz 45 50 55 % 100 ms NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: This parameter is defined in accordance with JEDEC Standard 65. ICS844625BYI REVISION A NOVEMBER 12, 2012 8 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Table 6C. LVDS AC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter fOUT Output Frequency tjit(Ø) RMS Phase Jitter (Random); QAx = QBx = QCx tjit(cc) Cycle-to-Cycle Jitter; NOTE 1 tR / tF Output Rise/Fall Time odc Output Duty Cycle tLOCK PLL Lock Time Test Conditions Minimum Typical Maximum Units Qx = ÷2 312.5 MHz Qx = ÷4 156.25 MHz Qx = ÷5 125 MHz 125MHz, (1.875MHz – 20MHz) 0.413 0.480 ps 156.25MHz, (1.875MHz – 20MHz) 0.384 0.423 ps 156.25MHz, (1MHz – 20MHz) 0.505 0.568 ps 312.5MHz, (1.875MHz – 20MHz) 0.329 0.384 ps 13 50 ps fOUT = 312.5MHz, 20% to 80% 350 600 1200 ps fOUT = 125MHz, 156.25MHz, 20% to 80% 400 700 1200 ps fOUT = 312.5MHz 35 48 60 % fOUT = 125MHz, 156.25MHz 45 50 55 % 100 ms NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE 1: This parameter is defined in accordance with JEDEC Standard 65. ICS844625BYI REVISION A NOVEMBER 12, 2012 9 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Noise Power dBc Hz Typical Phase Noise at 125MHz, LVDS Output (VDD = 3.3V, VDDO = 3.3V) Offset Frequency (Hz) Noise Power dBc Hz Typical Phase Noise at 156.25MHz, LVDS Output (VDD = 3.3V, VDDO = 3.3V) Offset Frequency (Hz) ICS844625BYI REVISION A NOVEMBER 12, 2012 10 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Noise Power dBc Hz Typical Phase Noise at 156.25MHz, LVDS Output (VDD = 3.3V, VDDO = 3.3V) Offset Frequency (Hz) ICS844625BYI REVISION A NOVEMBER 12, 2012 11 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Parameter Measurement Information SCOPE SCOPE 3.3V±5% POWER SUPPLY + Float GND – Qx VDD, VDDO LVDS VDDA VDD, VDDO 2.5V±5% POWER SUPPLY + Float GND – Qx VDDA nQx nQx 3.3V Core/ 3.3V LVDS Output Load AC Test Circuit 2.5V Core/ 2.5V LVDS Output Load AC Test Circuit Phase Noise Plot 3.3V±5% VDD Qx Noise Power 2.5V±5% SCOPE VDDA + + VDDO – POWER SUPPLY Float GND nQx Offset Frequency f1 f2 RMS Phase Jitter = 1 * Area Under Curve Defined by the Offset Frequency Markers 2* *ƒ 3.3V Core/ 2.5V LVDS Output Load AC Test Circuit RMS Phase Jitter nQAx, nQBx, nQCx nQAx, nQBx, nQCx QAx, QBx, QCx t PW t odc = 80% 80% PERIOD t PW QAx, QBx, QCx x 100% VOD 20% 20% t PERIOD tR Output Duty Cycle/Pulse Width/Period Output Rise/Fall Time ICS844625BYI REVISION A NOVEMBER 12, 2012 12 tF ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Parameter Measurement Information, continued VDD VDD out out DC Input DC Input LVDS LVDS 100 out VOS/Δ VOS out ä Differential Output Voltage Setup Offset Voltage Setup Applications Information Recommendations for Unused Input and Output Pins Inputs: Outputs: REF_CLK Input LVDS Outputs For applications not requiring the use of the reference clock, it can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from the REF_CLK to ground. All unused LVDS output pairs can be either left floating or terminated with 100 across. If they are left floating, there should be no trace attached. Crystal Inputs For applications not requiring the use of the crystal oscillator input, both XTAL_IN and XTAL_OUT can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from XTAL_IN to ground. LVCMOS Control Pins All control pins have internal pullups or pulldowns; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. ICS844625BYI REVISION A NOVEMBER 12, 2012 13 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Overdriving the XTAL Interface The XTAL_IN input can be overdriven by an LVCMOS driver or by one side of a differential driver through an AC coupling capacitor. The XTAL_OUT pin can be left floating. The amplitude of the input signal should be between 500mV and 1.8V and the slew rate should not be less than 0.2V/nS. For 3.3V LVCMOS inputs, the amplitude must be reduced from full swing to at least half the swing in order to prevent signal interference with the power rail and to reduce internal noise. Figure 1A shows an example of the interface diagram for a high speed 3.3V LVCMOS driver. This configuration requires that the sum of the output impedance of the driver (Ro) and the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This VCC can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and changing R2 to 50. The values of the resistors can be increased to reduce the loading for a slower and weaker LVCMOS driver. Figure 1B shows an example of the interface diagram for an LVPECL driver. This is a standard LVPECL termination with one side of the driver feeding the XTAL_IN input. It is recommended that all components in the schematics be placed in the layout. Though some components might not be used, they can be utilized for debugging purposes. The datasheet specifications are characterized and guaranteed by using a quartz crystal as the input. XTAL_OUT R1 100 Ro Rs C1 Zo = 50 ohms XTAL_IN R2 100 Zo = Ro + Rs .1uf LVCMOS Driver Figure 1A. General Diagram for LVCMOS Driver to XTAL Input Interface XTAL_OUT C2 Zo = 50 ohms XTAL_IN .1uf Zo = 50 ohms LVPECL Driver R1 50 R2 50 R3 50 Figure 1B. General Diagram for LVPECL Driver to XTAL Input Interface ICS844625BYI REVISION A NOVEMBER 12, 2012 14 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER LVDS Driver Termination For a general LVDS interface, the recommended value for the termination impedance (ZT) is between 90 and 132. The actual value should be selected to match the differential impedance (Z0) of your transmission line. A typical point-to-point LVDS design uses a 100 parallel resistor at the receiver and a 100 differential transmission-line environment. In order to avoid any transmission-line reflection issues, the components should be surface mounted and must be placed as close to the receiver as possible. IDT offers a full line of LVDS compliant devices with two types of output structures: current source and voltage source. The LVDS Driver standard termination schematic as shown in Figure 2A can be used with either type of output structure. Figure 2B, which can also be used with both output types, is an optional termination with center tap capacitance to help filter common mode noise. The capacitor value should be approximately 50pF. If using a non-standard termination, it is recommended to contact IDT and confirm if the output structure is current source or voltage source type. In addition, since these outputs are LVDS compatible, the input receiver’s amplitude and common-mode input range should be verified for compatibility with the output. ZO  ZT ZT LVDS Receiver Figure 2A. Standard Termination LVDS Driver ZO  ZT C ZT 2 LVDS ZT Receiver 2 Figure 2B. Optional Termination LVDS Termination ICS844625BYI REVISION A NOVEMBER 12, 2012 15 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 3. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/Electrically Enhance Leadframe Base Package, Amkor Technology. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are application specific SOLDER PIN PIN PAD EXPOSED HEAT SLUG GROUND PLANE THERMAL VIA SOLDER SOLDER PIN LAND PATTERN (GROUND PAD) PIN PAD Figure 3. Assembly for Exposed Pad Thermal Release Path - Side View (drawing not to scale) ICS844625BYI REVISION A NOVEMBER 12, 2012 16 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Schematic Layout Figure 4 shows an example ICS844625I application schematic in which the device is operated at VDD = VDDA = 3.3V.3V and VDDO = 2.5V. The schematic example focuses on functional connections and is intended as an example only and may not represent the exact user configuration. Refer to the pin description and functional tables in the datasheet to ensure the logic control inputs are properly set. For example MR, BYPASS and the output enables, OE[A:C] can be configured from an FPGA instead of pull up and pull down resistors as shown. This device package has an ePAD that is connected to ground internally. The ePAD is to be connected to GND through vias in order to improve heat dissipation. As with any high speed analog circuitry, the power supply pins are vulnerable to random noise, so to achieve optimum jitter performance isolation of the VDD pin from power supply is required. In order to achieve the best possible filtering, it is recommended that the placement of the filter components be on the device side of the PCB as close to the power pins as possible. If space is limited, all the 0.1uf capacitors associated with the VDD, VDDA and VDDO pins as well as the 10 resistor of the VDDA filter must be placed on the device side with direct return to the ground plane though vias. The remaining filter components can be on the opposite side of the PCB. There are two LVDS termination options shown as examples of valid terminations. 1) The standard 100 resistor termination of R2. 2) An AC termination, used when coupling the ICS844625I LVDS output stage to a different logic family receiver. Always check to make sure LVDS p-p swing is sufficient to drive the receiver to valid logic levels. a) If the receiver is HCSL, then the R6-R7 voltage divider is set at the common mode center voltage of 0.35V. b) If the receiver is 1.5V CML, then R6 = 0 and R7 and C12 are not populated. Typically in this case, the termination resistors, R3 and R4 are integrated into the receiver. In this case only the external coupling caps, C13 and C14 are necessary for the proper termination of the LVDS output. ICS844625BYI REVISION A NOVEMBER 12, 2012 Power supply filter component recommendations are a general guideline to be used for reducing external noise from coupling into the devices. The filter performance is designed for a wide range of noise frequencies. This low-pass filter starts to attenuate noise at approximately 10kHz. If a specific frequency noise component is known, such as switching power supplies frequencies, it is recommended that component values be adjusted and if required, additional filtering be added. Additionally, good general design practices for power plane voltage stability suggests adding bulk capacitance in the local area of all devices. 17 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER   Logic Control Input Examples VD D Set Logic Input to '1' 3.3V Set Logic Input to '0' VD D F B1 2 VD D R U1 1K BLM18BB221SN 1 RU 2 Not I nstall R 5 10 C4 10uF VD DA To Logic Input pins To Logic Input pins R D1 N ot Inst all 1 C3 0.1uF C5 10uF 2.5V RD 2 1K F B2 VD D O 2 1 BLM18BB221SN 1 C9 10uF C8 0.1uF VDD C6 0. 1uF C 11 0. 1uF 41 42 SELB1 SELB0 11 10 SELC1 SELC0 5 4 O EA O EB O EC 6 8 9 45 44 BYPASS MR 40 SELA1 SELA0 SELB1 SELB0 C7 0 .1uF VDD A SELA1 SELA0 VDD 7 VD D U1 48 VDD A VD D O VD D O VD D O SELC 1 SELC 0 VD D O VD DO 13 19 C 18 0 .1uF 24 C17 0. 1uF 32 C 16 0.1uF 37 OEA OEB OEC Place each 0.1uF bypass cap directly adjacent to its corresponding VDD, VDDA or VDDO pin. C 15 0.1uF VD D O C 10 0 .1uF BYPASS MR Z o = 50 O hm 3. 3V Ro =7 Ohm QA0 nQA0 R1 QA1 nQA1 43 QA2 nQA2 LVC MO S D riv er QA3 nQA3 Z o = 50 O hm 47 REF _C LK QA4 nQA4 QA5 nQA5 39 38 Q A0 nQ A0 36 35 Q A1 nQ A1 34 33 Q A2 nQ A2 30 29 Q A3 nQ A3 28 27 Q A4 nQ A4 26 25 Q A5 nQ A5 23 22 Q B0 nQ B0 21 20 Q B1 nQ B1 - LVDS R eceiv er LVDS Terminations C 13 1 25MH z ( 18pf ) XTAL_IN QB0 nQB0 XTAL_OU T QB1 nQB1 2 X1 C1 27pF C2 33p F Q C0 nQ C0 Q C1 nQ C1 18 43 + R2 1 00 Z o = 50 O hm Z o = 50 O hm QC 1 0.1u VDD _R eveiv er R3 50 R6 17 16 Q C0 nQ C0 15 14 Q C1 nQ C1 R7 - C 12 0. 01uF R4 50 nc nc C 14 + Receiv er Z o = 50 O hm ePAD 0.1u 49 3 12 31 46 GN D GN D GN D GN D nQ C 1 Alternate AC coupled LVDS Termination (Select R6 and R7 to center the LVDS swing in the common mode center of the Receiver.) Figure 4. ICS844625I Application Schematic ICS844625BYI REVISION A NOVEMBER 12, 2012 18 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Power Considerations This section provides information on power dissipation and junction temperature for the ICS844625I. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the ICS844625I is the sum of the core power plus the analog power plus the power dissipated in the load(s). The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. • Power (core)MAX = VDD_MAX * (IDD_MAX + IDDA_MAX) = 3.465V * (125mA + 31mA) = 540.54mW • Power (outputs)MAX = VDDO_MAX * IDDO_MAX = 3.465V * 140mA = 485.1mW Total Power_MAX = 540.54mW + 485.1mW = 1025.64mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 29°C/W per Table 7 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 1.026W * 29°C/W = 114.7°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 7. Thermal Resistance JA for 48 Lead TQFP, E-Pad Forced Convection JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ICS844625BYI REVISION A NOVEMBER 12, 2012 0 1 2.5 29.0°C/W 22.6°C/W 21.1°C/W 19 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Reliability Information Table 8. JA vs. Air Flow Table for a 48 Lead TQFP, E-Pad JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2.5 29.0°C/W 22.6°C/W 21.1°C/W Transistor Count The transistor count for ICS844625I is: 3,716 ICS844625BYI REVISION A NOVEMBER 12, 2012 20 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Package Outline and Package Dimensions Package Outline - Y Suffix for 48 Lead TQFP, E-Pad -HD VERSION EXPOSED PAD DOWN 0.20 TAB -TAB, EXPOSED PART OF CONNECTION BAR OR TIE BAR Table 9. Package Dimensions for 48 Lead TQFP, E-Pad Symbol N A A1 A2 b c D&E D1 & E1 D2 & E2 D3 & E3 e L  JEDEC Variation: BBC - HD All Dimensions in Millimeters Minimum Nominal 48 0.05 0.95 0.17 0.09 0.45 0° 0.10 1.00 0.22 9.00 Basic 7.00 Basic 5.50 Ref. 3.5 0.5 Basic 0.60 Maximum 1.20 0.15 1.05 0.27 0.20 0.75 7° Reference Document: JEDEC Publication 95, MS-026 ICS844625BYI REVISION A NOVEMBER 12, 2012 21 ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER Ordering Information Table 10. Ordering Information Part/Order Number 844625BYILF 844625BYILFT Marking ICS844625BIL ICS844625BIL ICS844625BYI REVISION A NOVEMBER 12, 2012 Package “Lead-Free” 48 Lead TQFP, E-Pad “Lead-Free” 48 Lead TQFP, E-Pad 22 Shipping Packaging Tray Tape & Reel Temperature -40C to 85C -40C to 85C ©2012 Integrated Device Technology, Inc. ICS844625I Data Sheet CRYSTAL-TO-LVDS CLOCK SYNTHESIZER We’ve Got Your Timing Solution 6024 Silver Creek Valley Road San Jose, California 95138 Sales 800-345-7015 (inside USA) +408-284-8200 (outside USA) Fax: 408-284-2775 www.IDT.com/go/contactIDT Technical Support netcom@idt.com +480-763-2056 DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or their respective third party owners. Copyright 2012. All rights reserved.
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