HAT2183WP

HAT2183WP Silicon N Channel Power MOS FET Power Switching REJ03G0530-0500 Rev.5.00 Oct 21, 2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5678 DDDD 5678 4 G 4 321 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 20 40 20 40 20 30 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.5.00, Oct 21, 2005, page 1 of 6 HAT2183WP Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 150 — — 3.0 9 — — — — — — — — — — — — — Typ — — — — 15 0.057 1200 260 25 32 53 69 11 27 7 10 0.88 110 Max — 1 ±0.1 4.5 — 0.064 — — — — — — — — — — 1.4 — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VDS = 10 V Note4 ID = 10 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 7.5 Ω Rg = 10 Ω VDD = 120 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/dt = 100 A/µs Rev.5.00, Oct 21, 2005, page 2 of 6 HAT2183WP Main Characteristics Power vs. Temperature Derating 40 100 30 30 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 10 3 1 0.3 1m D 10 s 0µ 10 s µs C (Tc Ope = 2 ratio 5°C n ) Operation in this RDS(on) PW = 10 ms (1shot) 20 0.1 area is limited by 0.03 0.01 0.003 Ta = 25°C 3 10 30 100 300 1000 10 0 50 100 150 200 0.001 1 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 Typical Transfer Characteristics 20 VDS = 10 V Pulse Test 10 V 7V Pulse Test 6V Drain Current ID (A) Drain Current ID (A) 16 5.7 V 5.5 V 5.3 V 4 16 12 8 4 Tc = –75°C 12 8 VGS = 5 V 25°C −25°C 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Saturation Voltage vs. Gate to Source Voltage Static Drain to Source State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) Drain Source On Sate Resistance RDS(on) (Ω) 4 1 0.5 0.2 0.1 0.05 0.02 0.01 1 VGS = 10 V 3 2 ID = 20 A 1 10 A 5A Pulse Test 0 4 8 12 16 20 3 10 30 100 300 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00, Oct 21, 2005, page 3 of 6 HAT2183WP Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.20 VGS = 10 V 100 30 10 3 1 0.3 0.1 0.1 Tc = −25°C 75°C 25°C Pulse Test ID = 20 A 10 A Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance vs. Drain Current 0.16 0.12 0.08 5A 0.04 0 −25 0 25 50 75 100 125 150 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 1000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 VGS = 0 f = 1 MHz Ciss Reverse Recovery Time trr (ns) 500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 di / dt = 100 A / µs VGS = 0, Ta = 25°C Capacitance C (pF) 1000 300 100 30 10 3 1 0 50 Coss Crss 100 150 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) ID = 20 A 180 VDD = 30 V 60 V 120 V VDS Switching Characteristics Gate to Source Voltage VGS (V) 16 1000 tf VGS = 10 V, VDD = 75 V PW = 5 µs, duty ≤ 1 % RG = 10 Ω td(off) td(on) tf 10 tr 240 VGS tr 12 Switching Time t (ns) 100 120 8 60 VDD = 120 V 60 V 30 V 8 16 24 32 4 0 0 40 1 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nC) Drain Current ID (A) Rev.5.00, Oct 21, 2005, page 4 of 6 HAT2183WP Reverse Drain Current vs. Source to Drain Voltage 20 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V ID = 10 mA 1 mA 3 0.1 mA Reverse Drain Current IDR (A) 16 4 12 10 V 8 5V 4 VGS = 0, –5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 2 1 0 -25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance 3 γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 4.17°C/ W, Tc = 25°C PDM 0.03 0.02 1 0.0 1 sh D= PW T PW T p ot uls e 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 75 V 90% 90% td(off) tr Vin Vout Vout Monitor 10% 10% 10% Waveform 90% td(on) tr Rev.5.00, Oct 21, 2005, page 5 of 6 HAT2183WP Package Dimensions Package Name WPAK JEITA Package Code  RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.085g Unit: mm 0.5 ± 0.15 4.21Typ 1.27Typ 5.1 ± 0.2 0.8Max 3.9 ± 0.2 6.1 5.9 0.04Min 0.7Typ 0.635Max 1.27Typ 0.2Typ 0.5 ± 0.15 3.8 ± 0.2 +0.1 -0.3 +0.1 -0.2 0.4 ± 0.06 0.05Max 0Min Stand-off 4.9 ± 0.1 (Ni/Pd/Au plating) Ordering Information Part Name HAT2183WP-EL-E Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00, Oct 21, 2005, page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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