HAT2285WP

Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1371-0310 High Speed Power Switching Rev.3.10 May 13, 2010 Features     Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 78 D1 D1 56 S1/D2 S1/D2 5678 2 G1 4 G2 4 321 S1/D2(kelvin) 1 S2 3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS2 and Schottky Barrier Diode MOS1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings MOS1 30 ±20 14 56 14 8 150 –55 to +150 MOS2 & SBD 30 ±12 22 88 22 15 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW  10 s, duty cycle  1 % 2. Tc = 25°C REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 1 of 9 HAT2285WP Preliminary Electrical Characteristics • MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.0 — — 10 — — — — — — — — — — — — Typ — — — — 19 27 18 630 155 57 4.6 2.2 1.2 7 30 35 3.6 0.91 18 Max — ±0.1 1 2.5 24 40 — — — — — — — — — — — 1.19 — Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VGS = 10 V Note3 ID = 7 A, VGS = 4.5 V Note3 ID = 7 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 4.5 V, ID = 14 A VGS =10 V, ID = 7 A, VDD  10 V, RL = 1.42 , Rg = 4.7  IF = 14 A, VGS = 0 Note3 IF =14 A, VGS = 0 diF/ dt = 100 A/s • MOS2 & Schottky Barrier Diode (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Body–drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VF trr Min 30 — — 1.4 — — 24 — — — — — — — — — — — — Typ — — — — 14 15 40 1930 300 130 18 5.8 4.5 10 20 45 4.0 0.5 16 Max — ±0.1 1 2.5 18 23 — — — — — — — — — — — — — Unit V A mA V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID =1 mA ID =11 A, VGS = 10 V Note3 ID = 11 A, VGS = 4.5 V Note3 ID = 11 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VDD = 10 V, VGS = 4.5 V, ID = 22 A VGS = 10 V, ID = 11 A, VDD  10 V, RL = 0.91 , Rg = 4.7  IF = 3.5 A, VGS = 0 Note3 IF = 22 A, VGS = 0 diF/ dt = 100 A/s REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 2 of 9 HAT2285WP Preliminary Electrical Characteristics  MOS1 Power vs. Temperature Derating 16 1000 100 10 μs 1 m 100 μs PW s DC = Op 10 era ms tio n Maximum Safe Operation Area Channel Dissipation Pch (W) 12 Drain Current ID (A) 10 8 1 4 Operation in this area is 0.1 limited by RDS(on) Tc = 25°C 0.01 1 shot Pulse 0.1 1 0 50 100 150 200 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 4.5 V 10 V 3.6 V 20 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 10 3.2 V Drain Current ID (A) 10 VGS = 2.8 V Pulse Test 0 5 10 Tc = 75°C 25°C −25°C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Drain to Source Voltage VDS(on) (mV) 200 Pulse Test 150 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source On State Resistance vs. Drain Current 100 VGS = 4.5 V 10 V 10 100 ID = 5 A 50 2A 1A 0 1 0.1 1 Pulse Test 10 100 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 3 of 9 HAT2285WP Static Drain to Source On State Resistance vs. Temperature 50 Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 100 50 20 10 5 25°C 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 VDS = 10 V Pulse Test 5 10 20 50 100 75°C Tc = –25°C Static Drain to Source On State Resistance RDS(on) (mΩ) Pulse Test ID = 1 A, 2 A 5A 40 VGS = 4.5 V 30 20 10 V 10 0 –25 1 A, 2 A, 5 A 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 100 50 10000 5000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 2000 1000 500 200 100 50 20 10 0 5 10 15 20 25 30 Crss Coss Ciss 20 10 5 di / dt = 100 A / μs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 2 1 0.1 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 50 ID = 14 A VDD = 25 V 10 V 5V VGS VDS 20 100 Switching Characteristics tr 40 16 Switching Time t (ns) 50 td(off) 30 12 20 10 td(on) 5 tf 2 VGS = 10 V, VDD = 10 V Rg =4.7 Ω, duty ≤ 1 % 0.5 1 2 5 10 20 50 100 20 8 10 VDD = 25 V 10 V 5V 4 8 12 16 4 0 20 0 1 0.1 0.2 Gate Charge Qg (nC) Drain Current ID (A) REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 4 of 9 HAT2285WP Reverse Drain Current vs. Source to Drain Voltage 20 Preliminary Reverse Drain Current IDR (A) 10 V 5V 10 VGS = 0 V, –5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 02 0.03 0. 1 e 0.0 puls ot h 1s 0.01 10 μ 100 μ θch – c (t) = γ s (t) • θch – c θch – c = 15.6°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor 10% 10% 10% Switching Time Waveform 90% 90% td(on) tr 90% td(off) tf REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 5 of 9 HAT2285WP  MOS2 & Schottky Barrier Diode Power vs. Temperature Derating 40 1000 Preliminary Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 100 30 20 10 10 μs 1 1 m 00 μ PW s DC = 1 s 10 Op 0 m era s tio n 1 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 0 50 100 150 200 0.01 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 5V 10 V Pulse Test 20 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 10 2.6 V Drain Current ID (A) 2.8 V 10 2.4 V VGS = 2.3 V Tc = 75°C 25°C −25°C 0 1 2 3 4 5 0 5 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Gate to Source Voltage VGS (V) 160 Pulse Test Static Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source On State Resistance vs. Drain Current 100 Pulse Test Drain to Source Voltage VDS(on) (mV) 120 VGS = 4.5 V 10 10 V 80 ID = 5 A 40 2A 1A 0 1 0.1 1 10 100 2 4 6 8 10 12 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 6 of 9 HAT2285WP Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 100 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 VDS = 10 V Pulse Test 5 10 20 50 100 75°C 25°C Tc = –25°C Static Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source On State Resistance vs. Temperature 50 Pulse Test 40 30 1 A, 2 A, 5 A 20 VGS = 4.5 V 1 A, 2 A, 5 A 10 0 –25 10 V 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 100 50 Typical Capacitance vs. Drain to Source Voltage 10000 5000 VGS = 0 f = 1 MHz 2000 1000 500 Coss 200 100 50 20 10 100 0 5 10 15 20 25 30 Crss 20 10 5 di / dt = 100 A / μs VGS = 0, Ta = 25°C 0.3 1 3 10 30 2 1 0.1 Reverse Drain Current IDR (A) Capacitance C (pF) Ciss Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltag VDS (V) VGS Switching Characteristics Gate to Source Voltage VGS (V) 10 100 50 td(off) tr td(on) 50 ID = 22 A VDD = 25 V 10 V 5V VDS 40 8 Switching Time t (ns) 20 10 5 30 6 20 4 tf 2 VGS = 10 V, VDD = 10 V Rg =4.7 Ω, duty ≤ 1 % 2 5 10 20 50 100 10 VDD = 25 V 10 V 5V 10 20 30 40 2 0 50 0 1 0.1 0.2 0.5 1 Gate Charge Qg (nC) Drain Current ID (A) REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 7 of 9 HAT2285WP Reverse Drain Current vs. Source to Drain Voltage 20 Preliminary Reverse Drain Current IDR (A) 10 V VGS = 0 V, –5 V 5V 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.2 0.3 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 8.33°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 D= PW T 0.05 2 0.03 0.0 e .01 puls 0 t ho 1s 0.01 10 μ 100 μ Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 8 of 9 HAT2285WP Preliminary Package Dimensions Package Name WPAK-D JEITA Package Code ⎯ RENESAS Code PWSN0008DB-A Previous Code WPAK-DV MASS[Typ.] 0.07 Unit: mm 0.5 ± 0.15 4.21Typ 1.27Typ 5.1 ± 0.2 0.8Max 1.7 1.7 3.8 ± 0.2 +0.1 -0.2 +0.1 -0.3 0.5 6.1 5.9 0.04Min 0.7Typ 0.545Typ 1.27Typ 0.2Typ 0.5 ± 0.15 0.4 ± 0.06 0.05Max 0Min Stand-off 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part Name HAT2285WP-EL-E Quantity 2500 pcs Taping Shipping Container REJ03G1371-0310 Rev.3.10 May 13, 2010 Page 9 of 9 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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