ISL2110AR4Z-T

DATASHEET ISL2110, ISL2111 FN6295 Rev.7.00 Mar 16, 2017 100V, 3A/4A Peak, High Frequency Half-Bridge Drivers The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail. Features Related Literature • Drives 1nF load with typical rise/fall times of 9ns/7.5ns • For a full list of related documents, visit our website - ISL2110, ISL2111 product pages • 3.3V/TTL compatible input thresholds (ISL2111) • Drives N-Channel MOSFET half-bridge • SOIC, DFN, and TDFN package options • SOIC, DFN, and TDFN packages compliant with 100V conductor spacing guidelines per IPC-2221 • Pb-free (RoHS compliant) • Bootstrap supply max voltage to 114VDC • On-chip 1W bootstrap diode • Fast propagation times for multi-MHz circuits • CMOS compatible input thresholds (ISL2110) • Independent inputs provide flexibility Applications • No start-up problems • Telecom half-bridge DC/DC converters • Telecom full-bridge DC/DC converters • Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt • Two-switch forward converters • Low power consumption • Active-clamp forward converters • Wide supply voltage range (8V to 14V) • Class-D audio amplifiers • Supply undervoltage protection • 1.6W/1W typical output pull-up/pull-down resistance +12V +100V SECONDARY CIRCUIT VDD HB DRIVE HI PWM CONTROLLER LI CONTROL HI HO HS DRIVE LO ISL2110 ISL2111 VSS LO REFERENCE AND ISOLATION FIGURE 1. APPLICATION BLOCK DIAGRAM FN6295 Rev.7.00 Mar 16, 2017 Page 1 of 15 ISL2110, ISL2111 Functional Block Diagram HB VDD UNDER VOLTAGE HO LEVEL SHIFT DRIVER HS HI ISL2111 ISL2111 UNDER VOLTAGE LO DRIVER LI VSS EPAD (DFN Package Only) *EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For best thermal performance, connect the EPAD to the PCB power ground plane. FIGURE 2. FUNCTIONAL BLOCK DIAGRAM FN6295 Rev.7.00 Mar 16, 2017 Page 2 of 15 ISL2110, ISL2111 Application Diagrams +48V +12V SECONDARY CIRCUIT ISL2110 ISL2111 PWM ISOLATION FIGURE 3. TWO-SWITCH FORWARD CONVERTER +48V SECONDARY CIRCUIT +12V PWM ISL2110 ISL2111 ISOLATION FIGURE 4. FORWARD CONVERTER WITH AN ACTIVE-CLAMP Ordering Information PART NUMBER (Notes 3, 4) PART MARKING TEMP RANGE (°C) PACKAGE (RoHS COMPLIANT) PKG. DWG. # ISL2110ABZ (Note 1) 2110 ABZ -40 to +125 8 Ld SOIC M8.15 ISL2110AR4Z (Note 2) 211 0AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A ISL2111ABZ (Note 1) 2111 ABZ -40 to +125 8 Ld SOIC M8.15 ISL2111AR4Z (Note 2) 211 1AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A ISL2111ARTZ (Note 2) 211 1ARTZ -40 to +125 10 Ld 4x4 TDFN L10.4x4 ISL2111BR4Z (Note 2) 211 1BR4Z -40 to +125 8 Ld 4x4 DFN L8.4x4 NOTES: 1. Add “-T” for 2.5k unit tape and reel options. Refer to TB347 for details on reel specifications. 2. Add “-T” suffix for 6k unit tape and reel options. Refer to TB347 for details on reel specifications. 3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pbfree products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 4. For Moisture Sensitivity Level (MSL), please see device information page for ISL2110, ISL2111. For more information on MSL, see Tech Brief TB363. FN6295 Rev.7.00 Mar 16, 2017 Page 3 of 15 ISL2110, ISL2111 Pin Configurations ISL2111ARTZ (10 LD 4x4 TDFN) ISL2110AR4Z, ISL2111AR4Z (12 LD 4x4 DFN) TOP VIEW TOP VIEW VDD 1 10 LO VDD 1 12 LO HB 2 9 VSS NC 2 11 VSS HO 3 8 LI NC 3 HS 4 7 HI HB 4 NC 5 6 NC HO 5 8 LI HS 6 7 HI EPAD* 10 NC 9 NC *EPAD = EXPOSED PAD ISL2110ABZ, ISL2111ABZ (8 LD SOIC) ISL2111BR4Z (8 LD 4x4 DFN) TOP VIEW TOP VIEW VDD 1 8 LO HB 2 7 VSS HO 3 6 LI 4 5 HI HS VDD 1 8 LO HB 2 7 VSS HO 3 6 LI 5 HI HS 4 EPAD* *EPAD = EXPOSED PAD Pin Descriptions SYMBOL VDD DESCRIPTION Positive supply to lower gate driver. Bypass this pin to VSS. HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-side output. Connect to gate of high-side power MOSFET. HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-side input LI Low-side input VSS Chip negative supply, which will generally be ground. LO Low-side output. Connect to gate of low-side power MOSFET. NC No connect EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins. FN6295 Rev.7.00 Mar 16, 2017 Page 4 of 15 ISL2110, ISL2111 Absolute Maximum Ratings Thermal Information Supply Voltage, VDD, VHB - VHS (Notes 5, 6) . . . . . . . . . . . . . . . 0.3V to 18V LI and HI Voltages (Note 6) . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on LO (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on HO (Note 6) . . . . . . . . . . . . . . . . . . . . . .VHS - 0.3V to VHB + 0.3V Voltage on HS (Continuous) (Note 6) . . . . . . . . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Thermal Resistance (Typical) JA (°C/W) JC (°C/W) 8 Ld SOIC (Notes 7, 10) . . . . . . . . . . . . . . . . 95 46 10 Ld TDFN (Notes 8, 9) . . . . . . . . . . . . . . . 40 2.5 12 Ld DFN (Notes 8, 9) . . . . . . . . . . . . . . . . 39 2.5 8 Ld DFN (Notes 8, 9). . . . . . . . . . . . . . . . . . 40 4.0 Max Power Dissipation at +25°C in Free Air 8 Ld SOIC (Notes 7, 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W 10 Ld TDFN (Notes 8, 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W 12 Ld DFN (Notes 8, 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W 8 Ld DFN (Notes 8, 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-55°C to +150°C Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493 Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . . . . . . . . . .VHS + 7V to VHS + 14V and VDD - 1V to VDD + 100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .