NP82N04NLG-S18-AY

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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MLG, NP82N04NLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MLG and NP82N04NLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N04MLG-S18-AY NP82N04NLG-S18-AY LEAD PLATING PACKING PACKAGE Tube TO-220 (MP-25K) typ. 1.9 g Note Note Pure Sn (Tin) 50 p/tube TO-262 (MP-25SK) typ. 1.8 g Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES (TO-220) • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6000 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-262) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Note1 Drain Current (pulse) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Note2 Repetitive Avalanche Current Note2 Repetitive Avalanche Energy VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR 40 ±20 ±82 ±328 143 1.8 175 −55 to +175 43 185 V V A A W W °C °C A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.05 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19801EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP82N04MLG, NP82N04NLG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current TEST CONDITIONS MIN. TYP. MAX. UNIT IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.4 | yfs | VDS = 5 V, ID = 41 A 20 RDS(on)1 VGS = 10 V, ID = 41 A 3.4 4.2 mΩ RDS(on)2 VGS = 4.5 V, ID = 41 A 5.4 8.5 mΩ Forward Transfer Admittance Note Drain to Source On-state Resistance Note 2.5 V 65 S Input Capacitance Ciss VDS = 25 V, 6000 9000 pF Output Capacitance Coss VGS = 0 V, 580 870 pF Reverse Transfer Capacitance Crss f = 1 MHz 370 670 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 41 A, 26 60 ns Rise Time tr VGS = 10 V, 68 170 ns Turn-off Delay Time td(off) RG = 0 Ω 73 150 ns Fall Time tf 11 30 ns Total Gate Charge QG VDD = 32 V, 100 150 nC Gate to Source Charge QGS VGS = 10 V, 19 Gate to Drain Charge QGD ID = 82 A 32 VF(S-D) IF = 82 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 82 A, VGS = 0 V, 43 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 47 nC Body Diode Forward Voltage Note nC nC 1.5 V Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D19801EJ1V0DS td(on) ton tf toff NP82N04MLG, NP82N04NLG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 160 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 140 120 100 0 80 60 40 20 0 0 25 50 75 100 125 150 175 0 TC - Case Temperature - °C 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 n) R GS (V 100 d it e Lim V ) i0 1 = ID(Pulse) ID(DC) = 1i 0 0 μs i s i m s ar y nd i ss wn d it e Lim d it e im nL o ed ak io at Br ip 1 1i 0 1i m co Se D er 10 PW DC w Po TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A (o DS Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 1.05°C/W 0.1 Single Pulse 0.01 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19801EJ1V0DS 3 NP82N04MLG, NP82N04NLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 350 250 200 VGS = 4.5 V 150 100 TA = 85°C 125°C 150°C 175°C 10 1 Pulsed 0 0.001 0 0.5 1 1.5 2 0 2.5 1 3 4 5 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.5 2 1.5 1 0.5 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 175 | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V 1000 TA = −55°C −25°C 25°C 75°C 125°C 100 10 VDS = 5 V Pulsed 0.1 0.1 1 VGS = 4.5 V 4 10 V 2 Pulsed 0 1 10 100 100 1000 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 8 0.1 10 ID - Drain Current - A 10 6 150°C 175°C 1 225 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 2 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C 30 Pulsed ID = 82 A 41 A 16.4 A 20 10 0 0 4 8 12 16 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 −55°C −25°C 25°C 0.1 0.01 50 VGS(th) - Gate to Source Threshold Voltage - V VDS = 10 V Pulsed 100 10 V ID - Drain Current - A ID - Drain Current - A 300 Data Sheet D19801EJ1V0DS 20 NP82N04MLG, NP82N04NLG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 10000 8 VGS = 4.5 V 6 4 10 V 2 ID = 41 A Pulsed Ciss, Coss, Crss - Capacitance - pF 0 Ciss Coss 1000 Crss VGS = 0 V f = 1 MHz 100 -75 -25 25 75 125 175 225 0.1 SWITCHING CHARACTERISTICS 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(off) 100 td(on) tr 10 tf VDD = 20 V VGS = 10 V RG = 0 Ω 10 VDD = 32 V 20 V 8V 40 8 30 6 VGS 20 10 1 4 2 VDS ID = 82 A 0 0.1 1 10 0 100 20 ID - Drain Current - A 40 60 80 0 100 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 100 4.5 V VGS = 0 V 10 1 0.1 di/dt = 100 A/μs VGS = 0 V Pulsed 0.01 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D19801EJ1V0DS 0.1 1 10 100 IF - Diode Forward Current - A 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP82N04MLG, NP82N04NLG PACKAGE DRAWINGS (Unit: mm) 1.27±0.2 0.8±0.1 0.5±0.2 2.54 TYP. 2.5±0.2 2.54 TYP. 3 10.1±0.3 2 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 3.1±0.3 1 4.45±0.2 1.3±0.2 13.7±0.3 3 10.0±0.2 4 3.1±0.2 2 13.7±0.3 1 6.3±0.3 4 4.45±0.2 1.3±0.2 15.9 MAX. φ 3.8±0.2 2.8±0.3 10.0±0.2 1.2±0.3 TO-262 (MP-25SK) 8.9±0.2 TO-220 (MP-25K) 0.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D19801EJ1V0DS NP82N04MLG, NP82N04NLG MARKING INFORMATION NEC 82N04 LG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Wave soldering Maximum temperature (Solder temperature): 260°C or below NP82N04MLG, Time: 10 seconds or less NP82N04NLG Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below NP82N04MLG, Time (per side of the device): 3 seconds or less NP82N04NLG Maximum chlorine content of rosin flux: 0.2% (wt.) or less Recommended Condition Symbol THDWS P350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet D19801EJ1V0DS 7 NP82N04MLG, NP82N04NLG • The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E