2SC5658

Transistors 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S !Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. !External dimensions (Units : mm) (1) 2SC2412K 2SC4081 (1) 2SC4617 0.65 0.65 (2) 0.95 0.95 1.9 1.3 2.0 (1) (2) 0.2 0.5 0.5 (3) 0.4 (3) 0.3 1.6 2.8 2.1 0.8 0.2 0.15 1.6 0.7 0.9 0.15 0.2 1.25 0.3 (3) 0.55 0.15 0.8 1.1 0~0.1 0.3Min. !Structure Epitaxial planar type NPN silicon transistor Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector 0~0.1 0.1Min. 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 (1) Emitter (2) Base (3) Collector 0~0.1 ROHM : EMT3 (1) Emitter (2) Base (3) Collector EIAJ : SC-75A JEDEC : SOT-416 Abbreviated symbol: B* Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 0.2 1.2 0.8 (2) (3) (1) 2SC1740S 4±0.2 2±0.2 3±0.2 0.2 1.2 0.32 0.4 0.4 0.8 0.22 (15Min.) 0.13 0~0.1 0.5 0.45+0.15 −0.05 0.15Max. 5 3Min. 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 (1) (2) (3) ROHM : VMT3 (1) Base (2) Emitter (3) Collector ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Abbreviated symbol: B* * Denotes hFE !Absolute maximum (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S Junction temperature Storage temperature PC Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 0.2 0.15 0.3 Tj Tstg 150 −55~+150 °C °C W Unit V V V A 0.7 1.0 1.6 (2) Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − Typ. − − − − − − − 180 2 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Max. − − − 0.1 0.1 560 0.4 − 3.5 Unit V V V µA µA − V MHz pF IC=50µA IC=1mA IE=50µA VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz Conditions !Packaging specifications and hFE Package Code Type 2SC2412K 2SC4081 2SC4617 2SC5658 2SC1740S hFE QRS QRS QRS QRS QRS − − − − − − − − − − Basic ordering unit (pieces) T146 3000 Taping T106 3000 − TL 3000 − − T2L 8000 − − − Bulk TP 5000 − − − − hFE values are classified as follows : Item hFE Q 120~270 R 180~390 S 270~560 !Electrical characterristic curves 50 100 VCE=6V COLLECTOR CURRENT : IC (mA) Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100°C 25°C −55°C 80 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 10 Ta=25°C 30µA 27µA 24µA 21µA 8 60 0.25mA 0.20mA 6 18µA 15µA 12µA 9µA 6µA 3µA 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 4 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) Transistors 500 Ta=25°C 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S 500 Ta=100°C VCE=5V 3V 1V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 0.5 Ta=25°C DC CURRENT GAIN : hFE 200 DC CURRENT GAIN : hFE 200 25°C −55°C 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig. 6 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 0.5 TRANSITION FREQUENCY : fT (MHz) IC/IB=50 Ta=100°C 25°C −55°C 500 Ta=25°C VCE=6V 0.2 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.1 0.05 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.9 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) 10 Cib Ta=25°C f=1MHz IE=0A IC=0A 200 Ta=25°C f=32MHZ VCB=6V 100 5 50 2 Co 20 b 1 0.2 0.5 1 2 5 10 20 50 10 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Base-collector time constant vs. emitter current Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0