JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate
2SC5658
Transistors
General purpose transistors (NPN)
SOT-723
FEATURES
z Low Cob
z Complements the 2SA2029
1. BASE
2. EMITTER
3. COLLECTOR
Marking: BQ,BR,BS
Absolute maximum ratings (Ta=25 ℃unless otherwise noted)
Symbol
Parameter
Limit
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
IC
PC
TJ,Tstg
Collector Current -Continuous
Collector Dissipation
Operation Junction and Storage Temperature Range
7
V
150
mA
100
mW
-55~+150
℃
Electrical characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
hFE
VCE=6V,IC=1mA
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
VCE(sat)
fT
Cob
120
560
IC=50mA,IB=5mA
0.4
VCE=12V,IC=2mA, f=100MHz
VCB=12V,IE=0, f=1MHz
180
V
MHz
3.5
pF
Classification of hFE
Rank
Q
R
S
Range
120~270
180~390
270~560
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1
Rev. - 2.0
Typical Characteristics
Static Characteristic
7
hFE
1000
COMMON
EMITTER
Ta=25℃
20uA
6
Ta=100℃
16uA
Ta=25℃
DC CURRENT GAIN
IC
5
COLLECTOR CURRENT
14uA
4
12uA
10uA
3
IC
hFE
(mA)
18uA
——
8uA
2
6uA
100
4uA
1
COMMON EMITTER
VCE= 6V
IB=2uA
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
10
0.1
8
1
VCEsat
IC
100 150
10
COLLECTOR CURRENT
——
IC
(mA)
IC
300
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
2000
7
VCE (V)
1000
Ta=25℃
Ta=100 ℃
100
Ta=100 ℃
Ta=25℃
β=10
100
0.1
1
COLLECTOR CURREMT
IC
——
IC
β=10
10
0.1
100 150
10
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
1000
150
——
IC
100 150
(mA)
IC
TRANSITION FREQUENCY
10
T =2
5℃
a
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
100
COMMON EMITTER
VCE=6V
1
0.0
100
COMMON EMITTER
VCE=12V
Ta=25℃
10
0.3
0.6
0.9
1.2
1
10
50
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
10
Cob
1
——
IC
(mA)
Ta
100
75
50
25
0
1
REVERSE VOLTAGE
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PC
125
f=1MHz
IE=0/IC=0
0.1
0.1
100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
10
V
0
20
25
50
75
AMBIENT TEMPERATURE
(V)
2
100
Ta
125
150
(℃ )
Rev. - 2.0
6273DFNDJH2XWOLQH'LPHQVLRQV
Symbol
A
A1
b
b1
c
D
E
E1
e
Dimensions In Millimeters
Min.
Max.
0.500
0.000
0.050
0.170
0.270
0.270
0.370
0.150
1.150
1.250
1.150
1.250
0.750
0.850
0.800TYP.
7° REF.
Dimensions In Inches
Max.
Min.
0.020
0.000
0.002
0.007
0.011
0.011
0.015
0.006
0.045
0.049
0.045
0.049
0.030
0.033
0.031TYP.
7° REF.
6276XJJHVWHG3DG/D\RXW
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
3
Rev. - 2.0
6277DSHDQG5HHO
www.jscj-elec.com
4
Rev. - 2.0
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