2SD1733TLQ

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 3.0±0.2 Abbreviated symbol : DF 2SD1733 2SD1768S 0.65±0.1 0.75 2±0.2 3Min. 3±0.2 (15Min.) 9.5±0.5 0.5±0.1 2.5 0.9 2.3+−0.2 0.1 C0.5 1.5 1.5±0.3 4±0.2 6.5±0.2 5.1+−0.2 0.1 5.5+−0.3 0.1 0.45+0.15 −0.05 0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 5 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 (1) (2) (3) (1) (2) (3) Taping specifications ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 2SD1863 2.5±0.2 4.4±0.2 0.9 6.8±0.2 0.65Max. 0.5±0.1 (1) (2) 14.5±0.5 1.0 !Structure Epitaxial planer type NPN silicon transistor (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base 1/4 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V 1 A (DC) Parameter Collector current IC A (Pulse) ∗1 2 2SD1898 Collector power dissipation 2SD1733 PC 2SD1768S 2SD1863 0.5 W 2 W 1 W ∗3 10 W (Tc=25°C) 0.3 W 1 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. ∗3 When mounted on a 40×40×0.7mm ceramic board. !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 120 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 80 − − V IC=1mA Emitter-base breakdown voltage Parameter Conditions BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 1 µA VCB=100V Emitter cutoff current IEBO VEB=4V 2SD1863 DC current 2SD1733, 2SD1898 transfer ratio 2SD1768S hFE − − 1 µA 120 − 390 − 82 − 390 − 120 − 390 − VCE(sat) − 0.15 0.4 V Transition frequency fT − 100 − MHz Output capacitance Cob − 20 − pF Collector-emitter saturation voltage VCE=3V, IC=0.5A ∗ IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current 2/4 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors !Packaging specifications and hFE Package Type hFE 2SD1898 PQR Taping Code T100 TL TP TV2 Basic ordering unit (pieces) 1000 2500 5000 2500 − − − − − 2SD1733 PQR − 2SD1768S QR − − 2SD1863 R − − − − hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 !Electrical characteristic curves 10 1 5mA 0.8 2mA 1mA 0 0 0.1 10/1 0.05 0.02 0.01 0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 2 4 6 100 IB=0mA 10 8 0 0 Ta=25°C VCE=5V 500 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : −IE (mA) Fig.5 Gain bandwidth product vs. emitter current 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) IC/IB=20/1 VCE=3V 1V COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.2 1000 0.2 Fig.1 Grounded emitter propagation characteristics 0.5 3mA 0.4 BASE TO EMITTER VOLTAGE : VBE (V) 1.0 4mA 0.6 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.0 6mA 1.0 DC CURRENT GAIN : hFE 100 Ta=25°C Ta=25°C Ta=25°C Ta=25°C VCE=5V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 1000 Ta=25°C f=1MHz IE=0A Ic=0A 100 10 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors COLLECTOR CURRENT : IC (A) 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100 200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area (2SD1863) S 10m 200m m 20m DC 500m S 0m S m 100m 50m 1 Ic Max (Pulse) 0 =1 S 00 200m 2 0 =1 0m =1 500m Ta=25°C Single non-repetitive pulse 5 Pw =1 DC Pw 1 Ic Max (Pulse) Pw 2 10 Pw Ta=25°C Single non-repetitive pulse 5 COLLECTOR CURRENT : IC (A) 10 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1898) 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0