BD6934FV

Power Management IC Series for Automotive Body Control Antenna Driver BD6934FV No.09039EBT03 ●Description This 1ch half-bridje pre-driver for 125kHZ drive with a built-in oscillation circuit is equipped the driving current adjustment function. ●Features 1)Pre-driver for driving MOS-FET 2)4MHz ceramic resonator or external pulse are available 3)Driving current adjustment function (Dependence on power supply voltage) 4)Stand-by current 0μA（typ.） 5)Built-in the resistance between Gate to Source of FET 6)Built-in FET synchro on protect 7)Built-in thermal shutdown 8)Built-in under voltage lockout protection(UVLO) ●Applications Usable in driving low frequency , the likes of TPMS and smart entry system. ●Absolute Maximum Ratings（Ta=25℃） Parameter Supply voltage Power dissipation Operating temperature range Storage temperature range Junction temperature Symbol Vcc1,Vcc2 Pd Topr Tstg Tjmax Rating 12 562 ＊ -40～85 -55～150 150 Unit V mW ℃ ℃ ℃ ＊Reduced by 4.496mW/℃,when mounted on a glass epoxy board (70mm×70mm×1.6mm) ●Operating range (Ta=25℃) Parameter Symbol Operating range Unit V V V V Supply voltage Vcc1,Vcc2 3.5～8 RP,RN voltage Vrp,Vrn VCC2 XOUT,RT,CT voltage Vxout,Vrt,Vct VCC1 Input voltage VIN -0.3～VCC1 *This product described in this specification isn’t judged whether it applies to COCOM regulations. It should not be exported without authorization from the appropriate government. *This product is not designed for protection against radioactive rays. *Status of this document The Japanese version of this document is the formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document, formal version takes priority. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 1/12 2009.09 - Rev.B BD6934FV ●Electrical characteristics（Unless otherwise specified, VCC1=VCC2=3.5～8V,Ta=-40～85℃） Limit Typ. 3.5 - Technical Note Parameter ［ Circuit current］ VCC drive current VCC stand-by current Symbol Min. - Max. 7 10 Unit Conditions Measurement circuit Fig.31 Fig.32 Fig.33 Fig.33 Fig.33 Fig.33 Fig.32 Fig.32 Fig.34 Fig.34 Fig.34 Fig.34 Fig.33 Fig.34 Fig.31 Fig.32 Icc1 Icc2 mA μA V V V V μA μA % % % μ sec V V μA μA IN=High IN=Low Io=-5ｍA Io=5ｍA Io=-5ｍA Io=5ｍA Vo=0V Vo=12V VCC1=VCC2=3.5V VCC1=VCC2=4V VCC1=VCC2=7V * [Output] Upper side output voltage H Upper side output voltage L Lower side output voltage H Lower side output voltage L Output leak current H Output leak current L ON Duty 3.5V ON Duty 4V ON Duty 7V Oscillating start time * ［ Input（IN,SEL）］ Input voltage H Input voltage L Input current H Input current L VOHH VOHL VOLH VOLL ILH ILL D ON3.5 D ON4 D ON7 T OSC VIH V IL IIH IIL VCC-0.4 VCC-0.4 6.84 13 44 VCC*0.8 10 - VCC-0.2 0.2 VCC-0.2 0.2 9.17 15 49 - 0.4 0.4 10 10 11.5 17 54 8 1.3 150 10 VIN=VCC VIN=0V ［ Under voltage lockout protection ］ UVLO ON voltage UVLO OFF voltage ［ Trianglar wave generation］ RT voltage CT charge current CT discharge current VRT ICTC ICTD 0.63 346 300 0.7 432 430 0.77 518 560 V μA μA VCT ＝1.1V VCT ＝1.1V Fig.35 Fig.35 Fig.35 VUVON VUVO FF 2.7 2.9 3 3.2 3.3 3.5 V V Fig.31 Fig.31 * Oscillating start time ： Time till operating output, after UVLO turn off during oscillating ceramic resonator. ◎This product is not designed for protection against radioactive rays. ●Dimension Product No. D6934 Lot No. Fig.1 SSOP-B16 （UNIT:mm） www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 2/12 2009.09 - Rev.B BD6934FV ●Reference Data 5 4 3 2 1 0 0 3 6 9 12 Ta=85℃ Ta=25℃ Ta=-40℃ Technical Note 4.0 0.0 3.0 V_OUTN-VCC2[V] -0.3 Ta=-40℃ Ta=25℃ ICC2[μA] ICC1[mA] 2.0 -0.6 Ta=85℃ 1.0 Ta=-40℃ Ta=25℃ Ta=85℃ -0.9 0.0 0 3 6 9 12 -1.2 0 5 10 15 20 VCC1,VCC2[V] VCC1,VCC2[V] I_OUTP[mA] Fig.2 VCC drive current 0.0 1.2 Fig.3 VCC stand-by current Fig.4 output voltage H (Vcc3.5V) 1.2 -0.3 0.9 Ta=25℃ Ta=85℃ T=a25℃ 0.9 V_OUTN(V) V_OUTN[V] V_OUTN[V] Ta=-40℃ Ta=85℃ -0.6 0.6 Ta=-40℃ 0.6 Ta=-40℃ Ta=85℃ Ta=25℃ -0.9 0.3 0.3 -1.2 0 5 10 15 20 0.0 0 5 10 15 20 0.0 0 5 10 15 20 I_OUTP[mA] I_OUTN[mA] I_OUTN[mA] Fig.5 output voltage H (Vcc8V) 4 4 Fig.6 output voltage L (Vcc3.5V) Fig.7 output voltage L (Vcc8V) 3 3 I_OUTP[μA] I_OUTP[μA] OUTP 2 Ta=85℃ Ta=25℃ 2 Ta=85℃ Ta=25℃ 1 Ta=-40℃ 1 Ta=-40℃ OUTN 0 0 3 6 9 12 0 0 3 6 9 12 VCC1,VCC2[V] VCC1,VCC2[V] Fig.8 Output leak current H Fig.9 Output leak current L 0.8 Fig.10 ON Duty3.5V 0.6 V_RT[V] OUTP OUTP From Left Ta=-40℃ Ta=25℃ Ta=85℃ 0.4 OUTN OUTN 0.2 0.0 0.0 0.7 1.4 2.1 2.8 3.5 V_IN[V] Fig.11 ON Duty4V www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. Fig.12 ON Duty7V Fig.13 Input voltage H / L (Vcc3.5V) 3/12 2009.09 - Rev.B BD6934FV Technical Note 0.8 0.8 0.8 0.6 0.6 V_RT[V] V_RT[V] 0.4 0.4 V_RT[V] From Left Ta=-40℃ Ta=25℃ Ta=85℃ From Left Ta=-40℃ Ta=25℃ Ta=85℃ 0.6 From Left Ta=-40℃ Ta=25℃ Ta=85℃ 0.4 0.2 0.2 0.2 0.0 0.0 1.0 2.0 3.0 4.0 0.0 0.0 2.0 4.0 6.0 0.0 0.0 2.0 4.0 6.0 8.0 V_IN[V] V_IN[V] V_IN[V] Fig.14 Input voltage H / L (Vcc4V) Fig.15 Input voltage H / L (Vcc7V) Fig.16 Input voltage H / L (Vcc8V) 4 200 4.0 3 150 3.0 I_IN[μA] V_OUTP[V] I_IN[μA] Ta=85℃ 2 Ta=85℃ 100 Ta=25℃ Ta=-40℃ 2.0 From Left Ta=85℃ Ta=25℃ Ta=-40℃ 1 50 1.0 0 0 4 8 12 0 0 3 6 9 12 0 .0 0 1 2 3 4 VCC1,VCC2[V] VCC1,VCC2[V] VCC1,VCC2[V] Fig.17 Input current H Fig.18 Input current L Fig.19 UVLO ON/OFF voltage 1.0 0.8 1000 From Left Ta=-40℃ Ta=25℃ Ta=85℃ 500 V_RT[V] 0.6 Ta=85℃ I_CT[μA] 9 12 0 0.4 0.2 0.0 0 3 Ta=25℃ Ta=-40℃ -500 - 1000 6 0.0 0.3 0.6 0.9 1.2 1.5 VCC1,VCC2[V] V_CT[V] Fig.20 RT voltage Fig.21 CT charge-discharge current www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 4/12 2009.09 - Rev.B BD6934FV ●Block diagram CSTCR4M00G55B-R0 VCC1 XIN 9 1M On duty control / Synchro on protect Technical Note RN 8 N.C. 7 XOUT 10 680 CT 11 1000p RT 12 4.8k SEL 13 Counter VCC1 6 Triangle Oscillator VCC2 5 RP VCC2 100k Function Logic OUTP VCC2 VCC1 Function Logic OUTN 20k 4 20k OUTP 3 N.C. 2 OUTN 1 SP8M3 1u IN 14 100k GND 15 PGND 16 UVLO TSD Fig.22 Resonator mode VCC1 XIN 9 125kHz XOUT 10 Counter CT 11 1000p RT 12 4.8k SEL 13 100k IN 14 100k GND 15 PGND 16 VCC1 UVLO TSD Triangle Oscillator 1M On duty control / Synchro on protect RN 8 N.C. 7 VCC1 6 VCC2 5 RP 1u VCC2 Function Logic OUTP VCC2 Function Logic OUTN 20k 4 20k OUTP 3 N.C. 2 OUTN 1 SP8M3 Fig.23 External pulse mode * Product No.and constants of external devices are recommended condition. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 5/12 2009.09 - Rev.B BD6934FV ●Pin name PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin name OUTN N.C. OUTP RP VCC2 VCC1 N.C. RN XIN XOUT CT RT SEL IN GND PGND Function Technical Note Nch FET GATE connection N.C. Pch FET GATE connection For pull-up resistance of Pch FET Gate Power VCC terminal Signal VCC terminal N.C. For pull – down resistance of Nch FET Gate Resonator connection Resonator connection Capacitor connection for triangular wave generation Capacitor connection for triangular wave generation Input terminal for mode selection(Resonator mode:L,External pulse mode:H) Input terminal (Stand-by:L, Enable:H) Signal GND terminal Power GND terminal VCC1 ●I/O Circuit Diagram 6.6K SEL IN 100K 4p GND GND Fig.24 VCC1 GND SEL(13pin) IN(14pin) VCC1 GND VCC1 250 XIN 6K 1M 100 3.3K 100 4p GND VCC1 GND GND GND GND XOUT Fig.25 XIN(9pin) XOUT(10pin) GND www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 6/12 2009.09 - Rev.B BD6934FV VCC1 Technical Note 700 RT 700 700 Fig.26 GND VCC1 VCC1 RT(12pin) VCC1 CT GND GND Fig.27 GND GND CT(11pin) VCC2 VCC2 15 OUTP OUTN 15 PGND PGND 20k RP RN Fig.28 OUTN(1pin) OUTP(3pin) RP(4pin) RN(8pin) PGND www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 7/12 2009.09 - Rev.B BD6934FV ●Truth table Input Pin Name Pin No. XIN 9 4MHz 4MHz 125KHz 125KHz IN 14 L H L H SEL 13 L L L H OUTP 3 Hiz Enable Hiz Enable Output OUTP 1 Hiz Enable Hiz Enable Technical Note Resonator 4MHz External signal 125KHz ●Timing chart XIN （4MHz） Internal CLK H （125kHz） L period 8usec Variation as to supply voltage CT H OUTP L H OUTN L ON time Fig.29 Dead time Timing chart(driving) Dead time VCC (=IN) 8V 7V 3.2V 3.0V 0V OUTP Hi Enable Hiz OUTN Hi Enable Hiz Fig.30 VCC-OUTP・OUTN Operating range www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 8/12 2009.09 - Rev.B BD6934FV ●Measurement circuit Technical Note VIL A IIH 16 15 14 4.8K 1000P 13 12 11 10 9 16 15 A IIL 14 13 4.8K 1000P 12 11 10 9 BD6934FV VCC １ 5K 5K V A ICC1 VCC 2 3 4 5 6 7 8 １ BD6934FV 2 3 A 4 ILH ILL Vo 5 6 A 7 Icc2 Vcc 8 A ILH ILL Vo Fig.31 ICC1,IIH,VOVDN,VUVOFF Fig.32 ICC2,ILH,ILL,IIL VIH 4.8K 1000P 16 15 14 13 12 11 10 9 16 15 14 VIL 4.8K ceramic rasonator 1000P 13 12 11 10 9 BD6934FV １ 2 3 4 5 6 7 8 １ BD6934FV 2 3 4 5 6 7 8 VOLH VOLL V V VOHH VOHL VCC Oscillo scope DON TOSC VCC Fig.33 VOHH,VOHL,VOLH,VOLL,VIH Fig.34 DON3.5,DON4,DON7,TOSC,VIL ICTC A V VRT 4.8K 1000P ICTD 16 15 14 13 12 11 10 9 BD6934FV １ 2 3 4 5 6 7 8 VCC Fig.35 VRT,ICTC,ICTD www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 9/12 2009.09 - Rev.B BD6934FV ●Operating explanation Technical Note Driving current adjustment function. This IC control the duty of output pulse in response to supply voltage(Vcc). This function is allowed to control driving current and adjust the arrival range of radio frequency. The relationship between supply voltage(Vcc) and output(OUTN) is as shown in the following figure. This data is typical , refer to the electrical characteristics in regard to variation. Duty (%) 49 15 9.17 3.5 4 7 8 Vcc(v) Fig.36 Supply voltage (Vcc) - Output (OUTN) Duty External FET Connect PchMOS to OUTP and Nch MOS to OUTN Vds＞VCC, Vgs＞VCC, Allowable current ＞ Output current There is a possibility that upper and lower FET turn on at the same time. It is recommended to use 1000pF or smaller at input capacitor of external FET. However , these characteristics change in the layout pattern and parts variation and so on. Make evaluations with using board in mass production. Oscillation precision and condition The oscillation precision depends on the condition of ceramic resonator. This IC is evaluated with the ceramic resonator (Product No.CSTCR4M00G55B-R0) of MURATA manufacturing. In the range of Vcc 2.2~2.7V, this IC stops its oscillation without disenabling the ceramic resonator. ● OPERATING NOTES 1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a specialmode where the absolute maximum ratings may be exceeded is anticipated. 2) GND potential Ensure a minimum GND pin potential in all operating conditions. 3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Pin short and mistake mounting Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins and the power supply and GND pins caused by the presence of a foreign object may result in damage to the IC. Ensure a minimum GND pin potential in all operating conditions. 5) Actions in strong magnetic field Keep in mind that the IC may malfunction in strong magnetic fields. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 10/12 2009.09 - Rev.B BD6934FV Technical Note 6) Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure, and use similar caution when transporting or storing the IC. 7) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when the resistors and transistors are connected to the pins as shown in the following figure, The P/N junction functions as a parasitic diode when GND > Pin A for the resistor or GND > Pin B for the transistor(NPN). Similarly, when GND > Pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage to input pins. Keep in mind that the IC may malfunction in strong magnetic fields. Resistor (Pin A) (Pin B) C Transistor (NPN) B E (Pin B) C E B N P+ N P N P P+ N N P+ N P P+ N GND Parasitic elements or Parasitic elements GND Parasitic elements or Transistors P substrate (Pin A) GND Parasitic elements 8) Ground patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external parts, either. 9) Thermal shutdown circuit (TSD) This IC incorporates a built-in TSD circuit for the protection from thermal destruction. The IC should be used within the specified power dissipation range. However, in the event that the IC continues to be operated in excess of its power dissipation limits, the attendant rise in the junction temperature (Tj) will trigger the TSD circuit to turn off all output power elements. The circuit automatically resets once the junction temperature (Tj) drops. Operation of the TSD circuit presumes that the IC's absolute maximum ratings have been exceeded. Application designs should never make use of the TSD circuit. 10) External parts Driving current adjustment function in use low accuracy parts (Especially, RT terminal connection resistance, CT terminal connection capacitor and resonator ) may malfunction. The external parts use highly accuracy, and be careful additional impedance and capacitor for wiring pattern. 11)RP, RN terminal The resistance is built in between OUTP and RP, and OUTN and RN to turn off external MOS - FET in stand - by. Please wire with RP=VCC2 and RN =PGND. Improper wiring may result in damage for the penetration current. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 11/12 2009.09 - Rev.B BD6934FV ●Ordering part number Technical Note B D 6 Part No. 9 3 4 F V - E 2 Part No. Package FV: SSOP-B16 Packaging and forming specification E2: Embossed tape and reel SSOP-B16 5.0±0.2 16 9 Tape Quantity Embossed carrier tape 2500pcs E2 The direction is the 1pin of product is at the upper left when you hold 6.4±0.3 4.4±0.2 0.3Min. Direction of feed ( reel on the left hand and you pull out the tape on the right hand ) 1 8 0.15±0.1 1.15±0.1 0.10 0.1 0.65 0.22±0.1 1pin (Unit : mm) Direction of feed Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 12/12 2009.09 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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