BD9270F-E2

1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９２７０Ｆ FUNCTION ・ 1ch control with Full-Bridge (For USE FET Body-Di) ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Lamp current and voltage sense feed back control Sequencing easily achieved with Soft Start Control Striking time can Control independently (STRK pin) Circuit protection with Timer Latch (COMP) Circuit protection with quick Shutdown (COMPSD) Mode-selectable the operating or stand-by mode by stand-by pin Synchronous operating the other BD9270F ICs BURST mode controlled by PWM input Output liner Control by external DC voltage Built-in Error mode output pin (FAIL pin) ○ Absolute Maximum Ratings（Ta = 25℃） Parameter Supply Voltage OUTPUT DRIVER Symbol Limits Unit VCC 20 V LNx, HFNx, 20 V Operating Temperature Range Topr -40～+85 ℃ Storage Temperature Range Tstg -55～+150 ℃ Tjmax +150 ℃ Maximum Junction Temperature Power Dissipation Pd 688 * mW * Pd derate at 5.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm) ○Operating condition Parameter Supply voltage DRIVER frequency Symbol Limits Unit VCC 8.5～19.0 V FOUT 30～110 kHz REV. B 2/4 ○Electric Characteristics（Ta=25℃、VCC=12V、STB=3.0V） Symbol MIN. Limits TYP. MAX. Unit Icc1 Icc2 － － 4.5 30 8.1 70 mA uA VstH VstL 2 -0.3 － － VCC 0.8 V V VREG IREG 3.92 5 4.00 － 4.08 － V mA Vvccuvlo ⊿Vvccuvlo 7.0 0.50 7.5 0.60 8.0 0.70 V V FOUT VRT RSRT 63.0 1.05 － 65.0 1.50 100 67.0 1.95 200 kHz V Ω ISS VSS_ST VSS_ED ISTRK VSTRK_ED 0.9 0.18 1.35 0.8 1.94 1.1 0.20 1.50 1.0 2.00 1.3 0.22 1.65 1.2 2.06 uA V V uA V VIS1 VIS2 VVS IIS1 IIS2 IVS VISCOMP1 VISCOMP2 VREFIN 1.225 － 1.22 － 40 － 0.593 － 0.6 1.25 VREFIN 1.25 － 50 － 0.625 0.50 － 1.275 VIS1 1.28 0.9 60 0.9 0.657 － 1.6 V V V uA uA uA V V V DUTY-th 0.90 1.00 1.10 V Low = IS high (burst off) RsinkLN RsourceLN RsinkHFN RsourceHFN MAX DUTY 1.8 4.5 1.8 4.5 44.0 3.5 9.0 3.5 9.0 45.5 7.0 18.0 7.0 18.0 47.0 Ω Ω Ω Ω % VCC=12V VCC=12V VCC=12V VCC=12V FOUT=65kHz VCP ICP 1.94 0.9 2.00 1.0 2.06 1.1 V uA VCOMPH ⊿VCOMPH VCOMPSDH ⊿VCOMPSDH RFAIL 1.94 0.05 1.94 0.05 － 2.00 0.10 2.00 0.10 100 2.06 0.15 2.06 0.15 200 V V V V Ω CT_SYNC_OUT Low voltage VCT_SYNCH VCT_SYNCL CT_SYNC_OUT sink resistance RSYNC_OUT_sink 3.8 － － － 2.5 -0.3 4.0 － 150 300 － － 4.2 0.5 300 400 V V Ω Ω V V Parameter ((WHOEL DEVICE)) Operating current Stand-by current Conditions FOUT=60kHz, FB=GND, DUTY=0V ((STAND BY CONTROL)) Stand-by voltage H Stand-by voltage L ((REF4V BLOCK)) REF4V output voltage REF4V source current System ＯＮ System ＯＦＦ ((VCC UVLO BLOCK)) Operating voltage (VCC) Hysteresis width (VCC) ((OSC BLOCK)) Drive output frequency RT pin voltage SRT ON resistance ((SS STRK BLOCK)) Soft start current SS operation start voltage SS term END voltage STRK current STRK term END voltage RT=18.9kΩ ((FEED BACK BLOCK)) IS threshold voltage 1 IS threshold voltage 2 VS threshold voltage IS source current 1 IS source current 2 VS source current IS COMP detect voltage 1 IS COMP detect voltage 2 VREF input voltage range VREF applying voltage DUTY=1.5V DUTY=0V, IS=1.0V VREFIN≧1.25V VREFIN= 1V No effect at VREF＞1.25V ((DUTY BLOCK)) DUTY threshold voltage ((OUTPUT BLOCK)) LN output sink resistance LN output source resistance HFN output sink resistance HFN output source resistance MAX DUTY ((TIMER LATCH BLOCK)) Timer Latch setting voltage Timer Latch setting current ((COMP BLOCK)) COMP over voltage detect Hysteresis width (COMP) COMPSD over voltage detect Hysteresis width (COMPSD) FAIL ON resistance ((SYNCHRONOUS BLOCK)) CT_SYNC_OUT High voltage CT_SYNC_OUT source resistance RSYNC_OUT_source CT_SYNC_IN High voltage input range VCT_SYNC_IN_H CT_SYNC_IN Low voltage input range VCT_SYNC_IN_L （This product is not designed to be radiation-resistant.） REV. B VCT_SYNCH 1 VSS＞1.65V, SRT operate, CP timer latch VSS＞1.65V, OSC 2 count 3/4 〇Package Dimensions 〇Pin Description Device Mark BD9270F PIN No. PIN NAME 1 PGND 2 LN2 3 HFN2 4 CT_SYNC_IN 5 Lot No. SOP-24 (Unit:mm) 〇Block Diagram REV. B FUNCTION Ground for FET drivers NMOS FET driver NMOS FET driver (New Function) CT synchronous signal input pin CT_SYNC_OUT CT synchronous signal output pin 6 REF4V 7 SRT Internal regulator output External resistor from SRT to RT for adjusting the start-up triangle oscillator External resistor from RT to GND for adjusting the triangle oscillator 8 RT 9 GND GROUND 10 DUTY Control PWM mode and BURST mode 11 FAIL Error mode OUTPUT Pin (open drain) 12 STB Stand-by switch 13 CP 14 VREF 15 VS Error amplifier input 16 IS Error amplifier input 17 FB Error amplifier output 18 SS External capacitor from SS to GND for Soft Start Control 19 STRK 20 COMPSD Over voltage detect pin with Shutdown 21 COMP Over voltage detect pin with timer latch 22 VCC Supply voltage input 23 HFN1 NMOS FET driver (New Function) 24 LN1 External capacitor from CP to GND for Timer Latch Reference voltage input pin for Error amplifier Striking time setting pin NMOS FET driver 4/4 〇NOTE FOR USE １. This product is produced with strict quality control, but might be destroyed if used beyond its absolute maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating conditions go beyond the expected absolute maximum ratings. ２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small. ３. Mounting failures, such as misdirection or miscounts, may harm the device. ４. A strong electromagnetic field may cause the IC to malfunction. ５. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin Voltage should be under VCC voltage +0.3V even if the voltage is under each terminal ratings. ６. BD9270F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed. ７. When modifying the external circuit components, make sure to leave an adequate margin for external components actual value and tolerance as well as dispersion of the IC. ８. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. ９. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate. 10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch. 11. By STB voltage, BD9270F are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state (0.8～2.0V). 12. The pin connected a connector need to connect to the resistor for electrical surge destruction. 13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, ○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) ○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. Transistor (NPN) Resistance (PinA) (PinB) B E C Ｃ GND N P P＋ P＋ N Ｎ P substrate GND Parasitic diode N Ｎ N P substrate GND Parasitic diode (PinB) (PinA) B CＣ Ｂ EＥ Parasitic diode GND GND Other adjacent components Parasitic diode Fig-1 Simplified structure of a Bipolar IC REV. B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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