QS8J2
-12V Pch + Pch Middle Power MOSFET
Datasheet
l Outline
TSMT8
VDSS
-12V
RDS(on)(Max.)
36mΩ
ID
±4A
PD
1.5W
l Features
l Inner circuit
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S protection diode.
4) Small surface mount package(TSMT8)
5) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Embossed
Tape
Packing
l Application
Switching
Type
Reel size (mm)
180
Tape width (mm)
8
Basic ordering unit (pcs)
3000
Taping code
TR
Marking
J02
l Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
total
Power dissipation
Symbol
Value
Unit
VDSS
-12
V
ID
±4
A
ID,pulse*1
±12
A
VGSS
±10
V
PD*2
element
total
Junction temperature
Range of storage temperature
1.5
1.25
W
PD*3
0.7
Tj
150
℃
Tstg
-55 to +150
℃
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.002
QS8J2
Datasheet
l Thermal resistance
Parameter
Symbol
total
Thermal resistance, junction - ambient
RthJA*2
element
RthJA*3
total
Values
Min.
Typ.
Max.
-
-
83.3
-
-
100
-
-
178
l Electrical characteristics (T a = 25°C)
Parameter
Symbol
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Conditions
V(BR)DSS VGS = 0V, ID = -1mA
ΔV(BR)DSS
ΔTj
ID = -1mA
referenced to 25℃
Unit
℃/W
Values
Unit
Min.
Typ.
Max.
-12
-
-
V
-
-21.9
-
mV/℃
Zero gate voltage
drain current
IDSS
VDS = -12V, VGS = 0V
-
-
-1
μA
Gate - Source
leakage current
IGSS
VDS = 0V, VGS = ±10V
-
-
±10
μA
Gate threshold
voltage
VGS(th)
VDS = -6V, ID = -1mA
-0.3
-
-1.0
V
-
2.4
-
mV/℃
VGS = -4.5V, ID = -4A
-
26
36
VGS = -2.5V, ID = -2A
-
36
50
VGS = -1.8V, ID = -2A
-
46
69
VGS = -1.5V, ID = -0.8A
-
66
132
RG
f = 1MHz, open drain
-
15
-
Ω
|Yfs| *4
VDS = -6V, ID = -4A
5.5
-
-
S
Gate threshold voltage
temperature coefficient
ΔVGS(th) ID = -1mA
ΔTj
Static drain - source
on - state resistance
Gate input resistance
Forward Transfer
Admittance
RDS(on)*4
referenced to 25℃
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
mΩ
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
1940
-
Output capacitance
Coss
VDS = -6V
-
260
-
Reverse transfer capacitance
Crss
f = 1MHz
-
240
-
VDD ⋍ -6V,VGS = -4.5V
-
10
-
tr*4
ID = -2A
-
60
-
td(off)*4
RL = 3Ω
-
300
-
RG = 10Ω
-
180
-
Turn - on delay time
Rise time
Turn - off delay time
td(on)*4
tf*4
Fall time
Unit
pF
ns
l Gate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Total gate charge
Qg*4
VDD ⋍ -6V
-
20
-
Gate - Source charge
Qgs*4
ID = -4A
-
3.5
-
Gate - Drain charge
Qgd*4
VGS = -4.5V
-
3.0
-
Unit
nC
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Body diode continuous
forward current
Symbol
Conditions
IS
Values
Min.
Typ.
Max.
-
-
-1
Ta = 25℃
Body diode
pulse current
ISP*1
Forward voltage
VSD*4
VGS = 0V, IS = -4A
Unit
A
-
-
-12
-
-
-1.2
V
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20x20×0.8mm)
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
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© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
Junction Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
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© 2015 ROHM Co., Ltd. All rights reserved.
6/11
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current (I)
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© 2015 ROHM Co., Ltd. All rights reserved.
7/11
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current (lII)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current (IV)
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current (V)
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© 2015 ROHM Co., Ltd. All rights reserved.
8/11
20150730 - Rev.002
QS8J2
Datasheet
l Electrical characteristic curves
Fig.19 Typical Capacitance vs.
Drain - Source Voltage
Fig.20 Switching Characteristics
Fig.21 Dynamic Input Characteristics
Fig.22 Source Current vs.
Source Drain Voltage
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© 2015 ROHM Co., Ltd. All rights reserved.
9/11
20150730 - Rev.002
QS8J2
Datasheet
l Measurement circuits
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT
Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT
Fig. 2-2 GATE CHARGE WAVEFORM
l Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2015 ROHM Co., Ltd. All rights reserved.
10/11
20150730 - Rev.002
QS8J2
Datasheet
l Dimensions
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© 2015 ROHM Co., Ltd. All rights reserved.
11/11
20150730 - Rev.002
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