10V Drive Nch MOSFET
R5009ANJ
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy.
13.1 9.0
3.0
1.0
1.24
0.78
(3)
5.08
2.7
(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source)
(1)
(2)
Each lead has same dimensions
Applications Switching
Inner circuit
Packaging specifications
Package Code Type Basic ordering unit (pieces) Taping TL 1000
(1)
(1) Gate (2) Drain (3) Source
∗1
(2)
(3) ∗1 Body Diode
R5009ANJ
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
∗1 ∗2 ∗2 ∗3 ∗1
Limits 500 30 ±9 ±36 9 36 4.5 5.4 50 150 −55 to +150
Unit V V A A A A A mJ W °C °C
Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W
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1.2
2.54
0.4
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2009.02 - Rev.A
R5009ANJ
Electrical characteristics (Ta=25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗ Pulsed
Data Sheet
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
Min. − 500 − 2.5 − 2.5 − − − − − − − − − −
Typ. − − − − 0.55 − 650 400 30 30 20 62 28 21 5 9
Max. ±100 − 100 4.5 0.72 − − − − − − − − − − −
Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=4.5A, VGS=10V ID=4.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=4.5A, VDD 250V VGS=10V RL=55.6Ω RG=10Ω VDD 250V ID=9A VGS=10V RL=27.8Ω / RG=10Ω
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter Forward voltage
∗ Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.5
Unit V
Conditions IS= 9A, VGS=0V
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2/5
2009.02 - Rev.A
R5009ANJ
Electrical characteristics curves
100 Operation in this area is limited by RDS(ON) PW=100us PW=1ms
Data Sheet
15 Ta= 25°C Pulsed 10 7.0V 6.0V 5.5V 5 5.0V VGS= 4.5V 0
0.1 1 10 100 1000
10
8.0V
10V DRAIN CURRENT: ID (A)
8 6
Ta= 25°C Pulsed 10V 8.0V 7.0V 6.5V 5.5V
DRAIN CURRENT : ID (A)
10
DRAIN CURRENT: ID (A)
6.5V
1 DC operation 0.1 Ta = 25°C Single Pulse 0.01
4 2 0
6.0V 5.0V VGS= 4.5V
0
10
20
30
40
50
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Area
DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2 Typical Output Characteristics(Ⅰ )
DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3 Typical Output Characteristics(Ⅱ )
DRAIN CURRENT : ID (A)
10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C
5 4 3 2 1 0 -50
1
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
VDS= 10V Pulsed
GATE THRESHOLD VOLTAGE: VGS(th) (V)
100
6 VDS= 10V ID= 1mA
10 VGS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C
1
0.1
0.01
0.001 0.0
0.1 0.1 1 10 100
1.5
3.0
4.5
6.0
0
50
100
150
GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tch (°C) Fig.5 Gate Threshold Voltage vs. Channel Temperature
DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
2
2
100
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
1.5
Ta=25°C Pulsed
1.5
VGS= 10V Pulsed
VDS= 10V Pulsed 10
1 ID= 9.0A ID= 4.5A 0.5
1
ID= 9.0A ID= 4.5A
1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C
0.5
0.1
0 0 5 10 15
0 -50 0 50 100 150
0.01 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage
CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature
DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current
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3/5
2009.02 - Rev.A
R5009ANJ
REVERSE DRAIN CURRENT : IDR (A)
100 VGS= 0V Pulsed 10000 15
Data Sheet
GATE-SOURCE VOLTAGE : VGS (V)
CAPACITANCE : C (pF)
10
1000 Crss 100
Ciss
10
1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C
Ta= 25°C VDD= 250V ID= 9A RG= 10Ω Pulsed
Coss
5
0.1
10
Ta= 25°C f= 1MHz VGS= 0V 0.1 1 10 100 1000
0.01 0 0.5 1 1.5
1
0 0 5 10 15 20 25 30
SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage
TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics
REVERSE RECOVERY TIME: trr (ns)
1000
10000 Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed
SWITCHING TIME : t (ns)
1000
tf
100 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 10 0.1 1 10 100
100
td(off)
10 tr 1 0.1 1
td(on)
10
100
REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current
DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 42.4°C/W
0.1
0.01
0.001
0.0001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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4/5
2009.02 - Rev.A
R5009ANJ
Switching characteristics measurement circuit
Data Sheet
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
IG
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
Fig.3-1
Avalanche measurement circuit
Fig.3-2
Avalanche waveform
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5/5
2009.02 - Rev.A
Appendix
Notes
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Appendix-Rev4.0