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R5013ANJ

R5013ANJ

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    R5013ANJ - 10V Drive Nch MOSFET - Rohm

  • 数据手册
  • 价格&库存
R5013ANJ 数据手册
10V Drive Nch MOSFET R5013ANJ Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching 7.25 13.1 3.0 1.0 1.24 9.0 0.78 5.08 2.7 (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions LPTL 8.9 4.8 (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions Packaging specifications Package Type Code Basic ordering unit (pieces) Taping LPTS LPTL 1000 TL TLL Inner circuit ∗1 (1) (2) (3) (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed ∗1 Body Diode Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 500 ±30 ±13 ±52 13 52 6.5 11.3 100 150 −55 to +150 Unit V V A A A A A mJ W °C °C Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit °C/W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1.2 2.54 0.4 1/5 2009.04 - Rev.A R5013ANJ Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Data Sheet Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 500 − 2.5 − 4.0 − − − − − − − − − − Typ. − − − − 0.29 − 1300 500 40 30 32 90 30 35 8 15 Max. ±100 − 100 4.5 0.38 − − − − − − − − − − − Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=6.5A, VGS=10V VDS=10V, ID=6.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=6.5A VGS=10V RL=38.5Ω RG=10Ω VDD 250V ID=13A VGS=10V RL=19.2Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 13A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.04 - Rev.A R5013ANJ Electrical characteristic curves Data Sheet 100 20 Operation in this area is limited by RDS(ON) PW =100us DRAIN CURRENT: ID (A) 15 10V 6.5V 7.0V 8.0V 10 6.0V DRAIN CURRENT: ID (A) Ta= 25°C Pulsed 8 Ta= 25°C Pulsed 8.0V 10V 5.5V DRAIN CURRENT : ID (A) 10 PW =1ms 1 DC operation 0.1 Tc = 25°C Single Pulse 0.01 0.1 1 10 100 1000 5.5V 10 6 4 2 0 7.0V 6.5V 6.0V 5.0V 5.0V 5 VGS= 4.5V 0 0 10 20 30 40 50 VGS= 4.5V 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2 Typical Output Characteristics(Ⅰ ) DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3 Typical Output Characteristics(Ⅱ ) DRAIN CURRENT : ID (A) 10 1 0.1 0.01 0.001 0.0 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 5 4 3 2 1 0 -50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V Pulsed GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 6 VDS= 10V ID= 1mA 10 VGS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.1 1 10 100 1.5 3.0 4.5 6.0 0 50 100 150 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics CHANNEL TEMPERATURE: Tch (°C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.8 0.6 0.4 ID= 6.5A 0.2 0 0 5 10 15 ID= 13.0A Ta=25°C Pulsed 1 0.8 0.6 ID= 13.0A 0.4 0.2 0 -50 ID= 6.5A VGS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 100 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0 50 100 150 0.01 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.04 - Rev.A R5013ANJ REVERSE DRAIN CURRENT : IDR (A) 100 VGS= 0V Pulsed 10000 GATE-SOURCE VOLTAGE : VGS (V) 15 Ta= 25°C VDD= 250V ID= 13A RG= 10Ω Pulsed Data Sheet CAPACITANCE : C (pF) 10 1000 Ciss Coss 10 1 Ta= Ta= Ta= Ta= 125°C 75°C 25°C -25°C 100 Crss 5 0.1 10 Ta= 25°C f= 1MHz VGS= 0V 0.01 0.1 1 10 100 1000 0.01 0 0.5 1 1.5 1 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics REVERSE RECOVERY TIME: trr (ns) 1000 10000 tf 1000 td(off) 100 100 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 10 0.1 1 10 100 SWITCHING TIME : t (ns) Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed 10 tr 1 0.01 0.1 1 10 100 td(on) REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 49.9°C/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE W IDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.04 - Rev.A R5013ANJ Switching characteristics measurement circuit Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform VGS IAS L VDS VD(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VD(BR)DSS VD(BR)DSS - VDD Fig.3-1 Avalanche Measurement circuit Fig.3-2 Avalanche waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A
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